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ZHCSGE4B December 2010 – March 2017 TPS61240-Q1

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DRV|6
- MPDS216E

散热焊盘机械数据 (封装 | 引脚)

DRV|6
- QFND087M

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

	MIN	MAX	UNIT
Input voltage, V_I (on V_IN, L, and EN)	–0.3	7	V
Voltage on V_OUT	–2	7	V
Voltage on FB	–2	14	V
Peak output current	Internally limited
Operating junction temperature, T_J	–40	125	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±1000	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
	Supply voltage at V_IN		2.3	5.5	V
L	Inductance		1	2.2	µH
C_out	Output capacitance		1	20	µF
T_A	Operating ambient temperature⁽¹⁾	TPS61240IDRVRQ1	–40	85	°C
T_A	Operating ambient temperature⁽¹⁾	TPS61240TDRVRQ1	–40	105	°C

(1) In applications where high power dissipation, poor package thermal resistance, or both are present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T_A(max)) is dependent on the maximum operating junction temperature (T_J(max)), the maximum power dissipation of the device in the application (P_D(max)), and the junction-to-ambient thermal resistance of the device or package in the application (R_θJA), as given by the following equation: T_A(max)= T_J(max) – (R_θJA × P_D(max))

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS61240-Q1	UNIT
		DRV (WSON)
		6 PINS
R_θJA	Junction-to-ambient thermal resistance	67.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	71.4	°C/W
R_θJB	Junction-to-board thermal resistance	37.5	°C/W
ψ_JT	Junction-to-top characterization parameter	1.8	°C/W
ψ_JB	Junction-to-board characterization parameter	37.8	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	8.7	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Over full operating ambient temperature range with typical values at T_A = 25°C. Specifications apply for condition V_IN = EN = 3.6 V (unless otherwise noted). External components C_IN = 2.2 μF, C_OUT = 4.7 μF (0603), and L = 1μH (refer to Typical Applications section).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
DC/DC STAGE
V_IN	Input voltage range		2.3		5.5	V
V_OUT	Fixed output voltage range	2.3 V ≤ V_IN ≤ V_OUT, 0 mA ≤ I_OUT ≤ 200 mA	4.9	5	5.1	V
V_{O_Ripple}	Ripple voltage, PWM mode	I_LOAD = 150 mA			20	mVpp
	Output current	VIN = 2.3 V to 5.5 V	200			mA
I_SW	Switch valley current limit	V_OUT = V_GS = 5 V	500	600		mA
	Short circuit current	V_OUT = V_GS = 5 V	200	350		mApk
	High side MOSFET on-resistance⁽¹⁾	V_IN = V_GS = 5 V, T_A = 25°C⁽¹⁾		290		mΩ
	Low Side MOSFET on-resistance⁽¹⁾	V_IN = V_GS = 5 V, T_A = 25°C⁽¹⁾		250		mΩ
	Operating quiescent current	I_OUT = 0 mA, power save mode, device not switching		30	40	μA
	Shutdown current	TPS61240IDRVRQ1, EN = GND			1.5	μA
	Shutdown current	TPS61240TDRVRQ1, EN = GND			2.5	μA
	Reverse leakage current V_OUT	EN = 0 V, V_OUT = 5 V			2.5	μA
	Leakage current from battery to V_OUT	EN = GND			2.5	μA
	Line transient response	V_IN = 600 mVp-p AC square wave, 200 Hz, 12.5% DC at 50 mA or 200 mA load		±25	±50	mVpk
	Load transient response	0 mA to 50 mA, 50 mA to 0 mA, V_IN = 3.6 V, T_Rise = T_Fall = 0.1 μs		50		mVpk
	Load transient response	50 mA to 200 mA, 200 mA to 50 mA, V_IN = 3.6 V, T_Rise = T_Fall = 0.1 μs		150		mVpk
I_IN	Input bias current, EN	EN = GND or V_IN		0.01	1.0	μA
V_UVLO	Undervoltage lockout threshold	Falling		2.0	2.1	V
V_UVLO	Undervoltage lockout threshold	Rising		2.1	2.2	V
CONTROL STAGE
V_IH	High level input voltage, EN	2.3 V ≤ V_IN ≤ 5.5 V			1.0	V
V_IL	Low level input voltage, EN	2.3 V ≤ V_IN ≤ 5.5 V	0.4			V
OVC	Input over-voltage threshold	Falling		5.9		V
OVC	Input over-voltage threshold	Rising		6		V
t_Start	Start-up time	Time from active EN to start switching, no-load until V_OUT is stable 5 V			300	μs
DC/DC STAGE
Freq		See Figure 7		3.5		MHz
T_SD	Thermal shutdown	Increasing junction temperature		140		°C
T_SD	Thermal shutdown hysteresis	Decreasing junction temperature		20		°C

(1) DRV package has an increased R_DSon of about 40 mΩ due to bond wire resistance.

6.6 Typical Characteristics

Table 1. Table of Graphs

		Figure
Maximum output current	vs Input voltage	Figure 1
Efficiency	vs Output current, V_OUT = 5 V, V_IN = [2.3 V, 3 V, 3.6 V, 4.2 V]	Figure 2
Efficiency	vs Input voltage, V_OUT = 5 V, I_OUT = [100 µA, 1 mA, 10 mA, 100 mA, 200 mA]	Figure 3
Input current	at No output load (PFM Mode)	Figure 4
Output voltage	vs Output current, V_OUT = 5 V, V_IN = [2.3 V, 3 V, 3.6 V, 4.2 V]	Figure 5
Output voltage	vs Input voltage	Figure 6
Frequency	vs Output load, V_OUT = 5 V, V_IN = [3 V, 4 V, 5 V]	Figure 7

Figure 1. Maximum Output Current vs Input Voltage

Figure 3. Efficiency vs Input Voltage for Different Output Current (I_O)

Figure 5. Output Voltage vs Output Current for Different V_IN (V_I)

Figure 7. Frequency vs Output Load for Different V_IN

Figure 2. Efficiency vs Output Current for Different V_IN (V_I)

Figure 4. Input Current at No Output Load (PFM Mode) for Different T_A

Figure 6. Output Voltage vs Input Voltage for Different Output Current (I_O)