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SLVSAG8G September 2011 – June 2016 TPS61253 , TPS61254 , TPS61256 , TPS61258 , TPS61259 , TPS612592

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.

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机械数据 (封装 | 引脚)

YFF|9

散热焊盘机械数据 (封装 | 引脚)

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Input voltage	Voltage at VIN⁽²⁾, VOUT⁽²⁾, SW⁽²⁾, EN⁽²⁾, BP⁽²⁾	–0.3	7	V
Input current	Continuous average current into SW ⁽⁴⁾		1.8	A
Input current	Peak current into SW ⁽⁵⁾		3.5	A
Power dissipation		Internally limited
Temperature	Operating, T_A ⁽³⁾	–40	85	°C
	Operating virtual junction, T_J	–40	150
	Storage, T_stg	–65	150

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.

(2) All voltages are with respect to network ground terminal.

(3) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T_A(max)) is dependent on the maximum operating junction temperature (T_J(max)), the maximum power dissipation of the device in the application (P_D(max)), and the junction-to-ambient thermal resistance of the part/package in the application (θ_JA), as given by the following equation: T_A(max)= T_J(max)–(θ_JA X P_D(max)). To achieve optimum performance, it is recommended to operate the device with a maximum junction temperature of 105°C.

(4) Limit the junction temperature to 105°C for continuous operation at maximum output power.

(5) Limit the junction temperature to 125°C for 5% duty cycle operation.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000
		Machine model (MM)	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

			MIN	NOM	MAX	UNIT
V_I	Input voltage range	TPS61253	2.65⁽¹⁾		4.85	V
		TPS61254	2.5		4.35
		TPS61256	2.5		4.85
		TPS61257	2.5		4.15
		TPS61258	2.65⁽¹⁾		4.35
		TPS61259	2.65⁽¹⁾		4.85
		TPS612592	2.65⁽¹⁾		4.85
R_L	Minimum resistive load for start-up	TPS6125x	55			Ω
L	Inductance		0.7	1.0	2.9	µH
C_O	Output capacitance		3.5	5	50	µF
T_A	Ambient temperature		–40		85	°C
T_J	Operating junction temperature		–40		125	°C

(1) Up to 1000mA peak output current.

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS6125x	UNIT
		YFF
		9 PINS
R_θJA	Junction-to-ambient thermal resistance	108.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	1.0
R_θJB	Junction-to-board thermal resistance	18
ψ_JT	Junction-to-top characterization parameter	4.2
ψ_JB	Junction-to-board characterization parameter	17.9

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

Minimum and maximum values are at V_IN = 2.3V to 5.5V, EN = 1.8V, T_A = –40°C to 85°C; Circuit of Parameter Measurement Information section (unless otherwise noted). Typical values are at V_IN = 3.6V, EN = 1.8V, T_A = 25°C (unless otherwise noted).

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_Q	Operating quiescent current into V_IN Operating quiescent current into V_OUT Standby mode quiescent current into V_IN Standby mode quiescent current into V_OUT		I_OUT = 0mA, V_IN = 3.6V EN = V_IN, BP = GND Device not switching		30	45	µA
					7	15	µA
			I_OUT = 0mA, V_IN = V_OUT = 3.6V EN = GND, BP = V_IN Device not switching		11	20	µA
					9.5	15	µA
I_SD	Shutdown current		EN = GND, BP = GND		0.85	5.0	μA
V_UVLO	Under-voltage lockout threshold		Falling		2.0	2.1	V
V_UVLO	Under-voltage lockout threshold		Hysteresis		0.1		V
ENABLE, BYPASS
V_IL	Low-level input voltage					0.4	V
V_IH	High-level input voltage			1.0			V
I_lkg	Input leakage current		Input connected to GND or V_IN			0.5	µA
OUTPUT
V_OUT	Regulated DC output voltage	TPS61253	2.3V ≤ V_IN ≤ 4.85V, I_OUT = 0mA PWM operation. Open Loop	4.92	5	5.08	V
			3.3V ≤ V_IN ≤ 4.85V, 0mA ≤ I_OUT ≤ 1000mA PFM/PWM operation	4.85	5	5.2
			3.3V ≤ V_IN ≤ 4.85V, 0mA ≤ I_OUT ≤ 1500mA PFM/PWM operation Pulsed load test; Pulse width ≤ 20ms; Duty cycle ≤ 10%	4.75	5	5.2
	Regulated DC output voltage	TPS61254	2.3V ≤ V_IN ≤ 4.35V, I_OUT = 0mA PWM operation. Open Loop	4.43	4.5	4.57	V
	Regulated DC output voltage	TPS61254	2.65V ≤ V_IN ≤ 4.35V, 0mA ≤ I_OUT ≤ 800mA PFM/PWM operation	4.4	4.5	4.65	V
	Regulated DC output voltage	TPS61256	2.3V ≤ V_IN ≤ 4.85V, I_OUT = 0mA PWM operation. Open Loop	4.92	5	5.08	V
	Regulated DC output voltage	TPS61256	2.65V ≤ V_IN ≤ 4.85V, 0mA ≤ I_OUT ≤ 700mA PFM/PWM operation	4.9	5	5.2	V
	Regulated DC output voltage	TPS61257	2.3V ≤ V_IN ≤ 4.15V, I_OUT = 0mA PWM operation. Open loop.	4.23	4.3	4.37	V
	Regulated DC output voltage	TPS61257	2.65V ≤ V_IN ≤ 4.15V, 0mA ≤ I_OUT ≤ 800mA PFM/PWM operation	4.2	4.3	4.45	V
	Regulated DC output voltage	TPS61258	2.3V ≤ V_IN ≤ 4.35V, I_OUT = 0mA PWM operation. Open Loop	4.43	4.5	4.57	V
	Regulated DC output voltage	TPS61258	3.3V ≤ V_IN ≤ 4.35V, 0mA ≤ I_OUT ≤ 1500mA PFM/PWM operation Pulsed load test; Pulse width ≤ 20ms; Duty cycle ≤ 10%	4.3	4.5	4.65	V
	Regulated DC output voltage	TPS61259	2.3V ≤ V_IN ≤ 4.85V, I_OUT = 0mA PWM operation. Open Loop	5.02	5.1	5.18	V
	Regulated DC output voltage	TPS61259	3.4V ≤ V_IN ≤ 4.85V, 0mA ≤ I_OUT ≤ 1500mA PFM/PWM operation Pulsed load test; Pulse width ≤ 20ms; Duty cycle ≤ 10%	4.75	5.1	5.3	V
	Regulated DC output voltage	TPS612592	2.7V ≤ V_IN ≤ 4.8V, I_OUT = 0mA PWM operation. Open Loop	5.1	5.2	5.3	V
ΔV_OUT	Power-save mode output ripple voltage	TPS61254 TPS61258	PFM operation, I_OUT = 1mA		45		mVpk
	Standby mode output ripple voltage		EN = GND, BP = V_IN, I_OUT = 0mA		80
	PWM mode output ripple voltage		PWM operation, I_OUT = 200mA		20
	Power-save mode output ripple voltage	TPS61253 TPS61256 TPS61259 TPS612592	PFM operation, I_OUT = 1mA		50		mVpk
	Standby mode output ripple voltage	TPS61253 TPS61256 TPS61259 TPS612592	EN = GND, BP = V_IN, I_OUT = 0mA		80		mVpk
POWER SWITCH
r_DS(on)	High-side MOSFET on resistance				170		mΩ
r_DS(on)	Low-side MOSFET on resistance				100		mΩ
I_lkg	Reverse leakage current into VOUT		EN = GND, BP = GND			3.5	µA
I_LIM	Switch valley current limit	TPS61253 TPS61258 TPS61259 TPS612592	EN = V_IN, BP = GND. Open Loop	3300	3620	3900	mA
	Switch valley current limit	TPS61254 TPS61256 TPS61257	EN = V_IN, BP = GND. Open Loop	1900	2150	2400	mA
	Pre-charge mode current limit (linear mode)		EN = GND, BP = V_IN	165	215	265	mA
	Overtemperature protection				140		°C
	Overtemperature hysteresis				20		°C
OSCILLATOR
f_OSC	Oscillator frequency		V_IN = 3.6V V_OUT = 4.5V		3.5		MHz
TIMING
	Start-up time	TPS6125x	BP = GND, I_OUT = 0mA. Time from active EN to start switching		70		µs
	Start-up time	TPS61253 TPS61254 TPS61256 TPS61258 TPS61259 TPS612592	BP = GND, I_OUT = 0mA. Time from active EN to V_OUT		400		µs

7.6 Typical Characteristics

Table 1. Table of Graphs

			FIGURE
η	Efficiency	vs Output current	Figure 1, Figure 2, Figure 3, Figure 5
η	Efficiency	vs Input voltage	Figure 4
V_O	DC output voltage	vs Output current	Figure 6, Figure 7, Figure 8, Figure 9, Figure 10, Figure 14
V_O	DC output voltage	vs Input voltage	Figure 11
I_O	Maximum output current	vs Input voltage	Figure 12, Figure 13
ΔV_O	Peak-to-peak output ripple voltage	vs Output current	Figure 15, Figure 16, Figure 17
I_CC	Supply current	vs Input voltage	Figure 18, Figure 19
I_LIM	DC pre-charge current	vs Differential input-output voltage	Figure 20, Figure 21
I_LIM	Valley current limit	vs Temperature	Figure 22, Figure 23
r_DS(on)	MOSFET r_DS(on)	vs Temperature	Figure 24