SLVS585E July   2005  – June 2015 TPS62110 , TPS62111 , TPS62112 , TPS62113

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Typical Application Schematic
  5. 5 Revision History
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Enable
      2. 9.3.2 Low-Battery Detector (Standard Version)
      3. 9.3.3 Enable/Low-Battery Detector - Enhanced Version (TPS62113 Only)
      4. 9.3.4 Power Good Comparator
      5. 9.3.5 Undervoltage Lockout
      6. 9.3.6 Synchronization
      7. 9.3.7 Thermal Shutdown
    4. 9.4 Device Functional Modes
      1. 9.4.1 Soft Start
      2. 9.4.2 Constant-Frequency Mode of Operation (Sync = High)
      3. 9.4.3 Power Save Mode of Operation (Sync = Low)
      4. 9.4.4 100% Duty-Cycle, Low-Dropout Operation
      5. 9.4.5 No-Load Operation
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Standard Connection for Adjustable Version
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 External Component Selection
          2. 10.2.1.2.2 Inductor Selection
          3. 10.2.1.2.3 Output Capacitor Selection
          4. 10.2.1.2.4 Input Capacitor Selection
          5. 10.2.1.2.5 Feedforward Capacitor Selection
          6. 10.2.1.2.6 Recommended Capacitors
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Standard Connection for Fixed-Voltage Version
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curves
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Related Links
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage at VIN, VINA –0.3 20 V
VI Voltage at SW –1 20 V
Voltage at EN, SYNC, LBO, PG –0.3 20
Voltage at LBI, FB –0.3 7
IO Output current at SW 2400 mA
TJ Maximum junction temperature 150 °C
TA Operating free-air temperature –40 85 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VCC Supply voltage at VIN, VINA 3.1 17 V
Maximum voltage at PG, LBO, EN, SYNC 17 V
TJ Operating junction temperature –40 125 °C

8.4 Thermal Information

THERMAL METRIC(1) TPS6211x UNIT
RSA (VQFN)
16 PINS
RθJA Junction-to-ambient thermal resistance 48.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 45.4 °C/W
RθJB Junction-to-board thermal resistance 16.3 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 16.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

VI = 12 V, VO = 3.3 V, IO = 600 mA, EN = VI, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Input voltage 3.1 17 V
I(Q) Operating quiescent current IO = 0 mA, SYNC = GND, VI = 7.2 V,
TA = 25°C (1)		 20 µA
IO = 0 mA, SYNC = GND, VI = 17 V (1) 23 26
IQ(LBI) Quiescent current with enhanced LBI comparator version (TPS62113 only). EN = VI , LBI = GND 10 µA
I(SD) Shutdown current EN = GND 1.5 5 µA
EN = GND, TA = 25°C, VI = 7.2 V 1.5 3
ENABLE
VIH EN high-level input voltage 1.3 V
VIL EN low-level input voltage 0.3 V
EN trip-point hysteresis 170 mV
Ilkg EN input leakage current EN = GND or VI, VI = 12 V 0.01 0.2 µA
I(EN) EN input current 0.6 V ≤ V(EN)  ≤ 4 V 10 20 µA
V(UVLO) Undervoltage lockout threshold Input voltage falling 2.8 3 3.1 V
Undervoltage lockout hysteresis 250 300 mV
POWER SWITCH
RDS(ON) P-channel MOSFET ON-resistance VI  ≥ 5.4 V; IO = 350 mA 165 250 mΩ
VI = 3.5 V; IO = 200 mA 340
VI = 3 V; IO = 100 mA 490
Ilkg P-channel MOSFET leakage current VDS = 17 V 0.1 1 µA
ILIMF P-channel MOSFET current limit VI = 7.2 V, VO = 3.3 V 2100 2400 2600 mA
RDS(ON) N-channel MOSFET ON-resistance VI ≥ 5.4 V; IO = 350 mA 145 200 mΩ
VI = 3.5 V; IO = 200 mA 170
VI = 3 V; IO = 100 mA 200
Ilkg N-channel MOSFET leakage current VDS = 17 V 0.1 2 µA
PG OUTPUT, LBI, LBO
V(PG) Power good trip voltage VO – 1.6% V
Power good delay time VO ramping positive 50 µs
VO ramping negative 200
VOL PG, LBO output-low voltage V(FB) = 0.8 × VO nominal, IOL = 1 mA 0.3 V
IOL PG, LBO sink current 1 mA
Ilkg PG, LBO output leakage current V(FB) = VO nominal, V(LBI) = VI 0.01 0.25 µA
Minimum supply voltage for valid power good, LBI, LBO signal 3 V
VLBI LBI input trip voltage Input voltage falling 1.256 V
Ilkg LBI input leakage current 10 100 nA
LBI input trip-point
accuracy		 1.5%
VLBI,HYS Low-battery input hysteresis 25 mV
OSCILLATOR
fS Oscillator frequency 900 1000 1100 kHz
f(SYNC) Synchronization range CMOS-logic clock signal on SYNC pin 800 1400 kHz
VIH SYNC high-level input voltage 1.5 V
VIL SYNC low-level input voltage 0.3 V
Ilkg SYNC input leakage current SYNC = GND or VIN 0.01 0.2 µA
SYNC trip-point hysteresis 170 mV
Ilkg SYNC input leakage current 0.6 V ≤ V(SYNC)  ≤ 4 V 10 20 µA
Duty cycle of external clock signal 30% 90%
OUTPUT
VO Adjustable output voltage range TPS62110
TPS62113		 1.153 16 V
VFB Feedback voltage TPS62110
TPS62113		 1.153 V
Ilkg FB input leakage current TPS62110
TPS62113		 10 100 nA
Feedback voltage tolerance TPS62110
TPS62113		 VI = 3.1 V to 17 V;
0 mA < IO < 1500 mA(3)		 –2% 2%
Fixed output voltage tolerance(2) TPS62111 VI = 3.8 V to 17 V;
0 mA < IO < 1500 mA(3)		 –3% 3%
TPS62112 VI = 5.5 V to 17 V;
0 mA < IO < 1500 mA(3)		 –3% 3%
IO Maximum output current VI  ≥ 3 V (once undervoltage lockout voltage exceeded) 100 mA
VI  ≥ 3.5 V 500
VI  ≥ 4.3 V 1200
VI  ≥ 6 V 1500
Current into internal voltage divider for fixed voltage versions 5 µA
η Efficiency VI = 7.2 V; VO = 3.3 V; IO = 600 mA 92%
VI = 12 V, Vo = 5 V, Io = 600 mA
Duty-cycle range for main switches at 1 MHz 10% 100%
Minimum ton time for main switch 100 ns
TSD Shutdown temperature 145 °C
Start-up time IO = 800 mA, VI = 12 V, Vo = 3.3 V 1 ms
(1) Device is not switching.
(2) The output voltage accuracy includes line and load regulation over the full temperature range TA = –40°C to 85°C. See No-Load Operation.
(3) The maximum output current depends on the input voltage. See the maximum output current for further restrictions on the minimum input voltage.

8.6 Typical Characteristics

TPS62110 TPS62111 TPS62112 TPS62113 maxio_v_vi_lvs585.gifFigure 1. TPS62111 Maximum Output Current vs Input Voltage
TPS62110 TPS62111 TPS62112 TPS62113 quies_v_vi110_lvs585.gifFigure 3. Quiescent Current vs Input Voltage
TPS62110 TPS62111 TPS62112 TPS62113 sw_fr110_lvs585.gifFigure 2. Switching Frequency vs Input Voltage
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