SLVSAD5A July   2010  – August 2015 TPS62120 , TPS62122

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout
      2. 8.3.2 Enable and Shutdown
      3. 8.3.3 Power Good Output
      4. 8.3.4 SGND Open-Drain Output
      5. 8.3.5 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Soft Start
      2. 8.4.2 Main Control Loop
      3. 8.4.3 100% Duty Cycle Low-Dropout Operation
      4. 8.4.4 Short-Circuit Protection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TPS62120 With Open-Drain Output
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Output Voltage Setting
          2. 9.2.1.2.2 Output Filter Design (Inductor and Output Capacitor)
          3. 9.2.1.2.3 Inductor Selection
          4. 9.2.1.2.4 Output Capacitor Selection
          5. 9.2.1.2.5 Input Capacitor Selection
          6. 9.2.1.2.6 Checking Loop Stability
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Standard Circuit for TPS62122
    3. 9.3 System Examples
      1. 9.3.1 TPS62120 1.8-V Output Voltage Configuration
      2. 9.3.2 TPS62120 3.06-V Output Voltage Configuration
      3. 9.3.3 TPS62122 2.0-V Output Voltage Configuration
      4. 9.3.4 TPS62120 1.8-V VOUT Configuration Powered From a High-Impedance Source
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Related Links
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VI Voltage at VIN(2) –0.3 17 V
Voltage at SW PIN dynamically during switching t < 10 µs 17 V
static DC –0.3 6
Voltage at EN PIN(2) –0.3 VIN +0.3, but ≤17 V
Voltage on FB Pin –0.3 3.6 V
Voltage at PG, VOUT, SGND(2) –0.3 6 V
IIN Current into PG pin 0.5 mA
Maximum operating junction temperature, TJ –40 125 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal GND.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Supply voltage VIN, device in operation 2 15 V
Output current capability VIN = 2 V, VOUT = 1.8 V, DCRL = 0.7 Ω 25 mA
VIN ≥ 2.5 V, VOUT = 1.8 V, DCRL = 0.7 Ω 75
Effective inductance 10 22 33 µH
Effective output capacitance 1.0 2 33 µF
Output voltage 1.2 5.5 V
Operating ambient temperature TA(1), (unless otherwise noted) –40 85 °C
Operating junction temperature, TJ –40 125 °C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA × PD(max)).

7.4 Thermal Information

THERMAL METRIC(1) TPS62120 TPS62122 UNIT
DCN [SOT-23] DRV [DFN]
8 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 259.7 114.4 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 114.1 73.7 °C/W
RθJB Junction-to-board thermal resistance 185.8 201.9 °C/W
ψJT Junction-to-top characterization parameter 21.6 0.8 °C/W
ψJB Junction-to-board characterization parameter 121.6 94.9 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance n/a 122.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC PackageThermal Metrics application report, SPRA953

7.5 Electrical Characteristics

VIN = 8 V, VOUT = 1.8 V, EN = VIN, TJ = –40°C to 85°C, typical values are at TJ = 25°C (unless otherwise noted), CIN = 4.7 µF, L = 22 µH, COUT = 4.7 µF
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range(1) Device operating 2 15 V
IQ Quiescent current IOUT = 0 mA, device not switching, EN = VIN, regulator sleeps 11 18 µA
IOUT = 0 mA, device switching, VIN = 8 V, VOUT = 1.8 V 13
IActive Active mode current consumption VIN = 5.5 V = VOUT, TJ = 25°C, high-side MOSFET switch fully turned on 240 275 µA
ISD Shutdown current EN = GND, VOUT = SW = 0 V, VIN = 3.6 V (2) 0.3 1.2 µA
VUVLO Undervoltage lockout threshold Falling VIN 1.85 1.95 V
Rising VIN 2.5 2.61
ENABLE, THRESHOLD
VIH TH Threshold for detecting high EN 2 V ≤ VIN ≤ 15 V, rising edge 0.8 1.1 V
VIL TH HYS Threshold for detecting low EN 2 V ≤ VIN ≤ 15 V, falling edge 0.4 0.6 V
IIN Input bias current, EN EN = GND or VIN 0 50 nA
POWER SWITCH
RDS(ON) High-side MOSFET ON-resistance VIN = 3.6 V 2.3 3.4 Ω
VIN = 8 V 1.75 2.5
Low-side MOSFET ON-resistance VIN = 3.6 V 1.3 2.5
VIN = 8 V 1.2 1.75
ILIMF Forward current limit MOSFET high-side VIN = 8 V, open loop 200 250 400 mA
TSD Thermal shutdown Increasing junction temperature 150 °C
Thermal shutdown hysteresis Decreasing junction temperature 20 °C
REGULATOR
tONmin Minimum ON time VIN = 3.6 V, VOUT = 1.8 V 700 ns
tOFFmin Minimum OFF time VIN = 3.6 V, VOUT = 1.8 V 60 ns
VREF Internal reference voltage 0.8 V
VFB Feedback FB voltage comparator threshold Referred to 0.8-V internal reference –2.5% 0% 2.5%
Feedback FB voltage line regulation IOUT = 50 mA (4) 0.04 %/V
IIN Input bias current FB VFB = 0.8 V 0 50 nA
tStart Regulator start-up time Time from active EN to device starts switching, VIN = 2.6 V 50 150 µs
tRamp Output voltage ramp time Time to ramp up VOUT = 1.8 V, no load (3) 120 300
ILK_SW Leakage current into SW pin VOUT = VIN = VSW = 1.8 V, EN = GND, device in shutdown mode 1 1.5 µA
POWER GOOD OUTPUT (TPS62120)
VTHPG Power good threshold voltage Rising VFB feedback voltage 93% 95% 97%
Falling VFB feedback voltage 87% 90% 93%
VOL Output low voltage Current into PG pin I = 500 µA, VOUT > 1.5 V 165 mV
Current into PG pin I = 100 µA, 1.2 V < VOUT < 1.5 V 50
VH Output high voltage Open drain output, external pull up resistor 5.5 V
ILKG Leakage current into PG pin V(PG) = 1.8 V, EN = high, FB = 0.85 V 0 50 nA
Leakage into VOUT pin V(OUT) = 1.8 V 0 50 nA
TPGDL Internal power good comparator delay time VOUT = 1.8 V 2 5 µs
SGND OPEN DRAIN OUTPUT (TPS62120)
RDS(ON) NMOS drain source resistance SGND = 1.8 V, VIN = 2 V 370 Ω
ILKG Leakage current into SGND pin EN = VIN, SGND = 1.8 V 0 50 nA
(1) The typical required supply voltage for startup is 2.5 V. The part is functional down to the falling UVLO (undervoltage lockout) threshold.
(2) Shutdown current into VIN pin, includes internal leakage.
(3) Maximum value not production tested.
(4) VOUT +1 V ≤ VIN ; VOUT ≤ 5.5 V

7.6 Typical Characteristics

TPS62120 TPS62122 ls_rdson_lvsad5.gifFigure 1. Low-Side Switch Resistance RDS(ON) vs VIN
TPS62120 TPS62122 sd_cur_lvsda5.gifFigure 3. Shutdown Current vs VIN
TPS62120 TPS62122 tc_14_lvsad5.gifFigure 5. Switch Frequency vs Output Current IOUT
(VOUT = 3.3 V)
TPS62120 TPS62122 Q_cur_lvsad5.gifFigure 2. Quiescent Current vs VIN
TPS62120 TPS62122 tc_13_lvsad5.gifFigure 4. Switch Frequency vs Output Current IOUT
(VOUT = 2 V)
TPS62120 TPS62122 tc_15_lvsad5.gifFigure 6. Switch Frequency vs Output Current IOUT
(VOUT = 5 V)
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