米6体育平台手机版

ZHCS862E March 2012 – May 2017 TPS62125

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DSG|8
- MPDS308C

散热焊盘机械数据 (封装 | 引脚)

DSG|8
- QFND141I

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

⁽¹⁾

		MIN	MAX	UNIT
Pin voltage⁽²⁾	VIN	–0.3	20	V
	SW (DC)	–0.3	V_IN + 0.3V	V
	SW (AC, less than 10ns)⁽³⁾	-3.0	23.5	V
	EN	–0.3	V_IN + 0.3	V
	FB	–0.3	3.6	V
	VOS, PG	–0.3	12	V
	EN_hys	–0.3	7	V
Power good sink current	I_PG		10	mA
EN_hys sink current	I_{EN_hys}		3	mA
Maximum operating junction temperature, T_J		–40	125	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal GND.

(3) While switching

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

			MIN	MAX	UNIT
V_IN	Supply voltage		3	17	V
	Output current capability	3 V ≤ V_IN < 6 V		200	mA
	Output current capability	6 V ≤ V_IN ≤ 17 V		300	mA
T_A	Operating ambient temperature ⁽¹⁾ (Unless Otherwise Noted)		–40	85	°C
T_J	Operating junction temperature,		–40	125	°C

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T_A(max)) is dependent on the maximum operating junction temperature (T_J(max)) and the maximum power dissipation of the device in the application (P_D(max)); for more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS62125	UNIT
		DSG (WSON)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	65.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	93.3	°C/W
R_θJB	Junction-to-board thermal resistance	30.1	°C/W
ψ_JT	Junction-to-top characterization parameter	0.5	°C/W
ψ_JB	Junction-to-board characterization parameter	47.4	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	7.2	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

T_A = –40°C to 85°C, typical values are at T_A = 25°C (unless otherwise noted), V_IN = 12 V

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY
V_IN	Input voltage range⁽¹⁾		3		17	V
V_OUT	Output voltage range		1.2		10	V
I_Q	Quiescent current	I_OUT = 0 mA, device not switching, EN = V_IN, regulator sleeps		13	23	µA
		I_OUT = 0 mA, device switching, V_IN = 7.2 V, V_OUT = 1.2 V, L = 22 µH		14		µA
		V_IN = 5 V, EN = 1.1 V, enable comparator active, device DC/DC converter off		6	11	µA
I_Active	Active mode current consumption	V_IN = 5 V = V_OUT, T_A = 25°C, high-side MOSFET switch fully turned on (100% mode)		230	275	µA
I_SD	Shutdown current⁽²⁾	Enable comparator off, EN < 0.4 V, V_OUT = SW = 0 V, V_IN = 5 V		0.35	2.4	µA
V_UVLO	Undervoltage lockout threshold	Falling V_IN		2.8	2.85	V
V_UVLO	Undervoltage lockout threshold	Rising V_IN		2.9	2.95	V
ENABLE COMPARATOR THRESHOLD AND HYSTERESIS (EN, EN_hys)
V_{TH EN ON}	EN pin threshold rising edge	3 V ≤ V≤ 17 V	1.16	1.20	1.24	V
V_{TH EN OFF}	EN pin threshold falling edge		1.12	1.15	1.19	V
V_{TH EN Hys}	EN pin hysteresis _IN			50		mV
I_{IN EN}	Input bias current into EN pin	EN = 1.3 V		0	50	nA
V_{EN_hyst}	EN_hys pin output low	I_{EN_hyst} = 1 mA, EN = 1.1 V			0.4	V
I_{IN EN_hyst}	Input bias current into EN_hyst pin	EN_hyst = 1.3 V		0	50	nA
POWER SWITCH
R_DS(ON)	High-side MOSFET ON-resistance	V_IN = 3 V, I = 100 mA		2.4	4	Ω
	High-side MOSFET ON-resistance	V_IN = 12 V, I = 100 mA		1.5	2.6
	Low-side MOSFET ON-resistance	V_IN = 3 V, I = 100 mA		0.75	1.3
	Low-side MOSFET ON-resistance	V_IN = 12 V, I = 100 mA		0.6	1
I_LIMF	Switch current limit high-side MOSFET	V_IN = 12 V	600	750	900	mA
T_SD	Thermal shutdown	Increasing junction temperature		150		°C
T_SD	Thermal shutdown hysteresis	Decreasing junction temperature		20		°C
OUTPUT
t_ONmin	Minimum ON-time	V_IN = 5 V, V_OUT = 2.5 V		500		ns
t_OFFmin	Minimum OFF-time	V_IN = 5 V		60		ns
V_{REF_FB}	Internal reference voltage of error amplifier			0.808		V
V_FB	Feedback voltage accuracy	Referred to internal reference (V_{REF_FB})	–2.5%	0%	2.5%
	Feedback voltage line regulation	I_OUT = 100 mA, 5 V ≤ V_IN ≤ 17 V, V_OUT = 3.3 V⁽³⁾		–0.05		%/V
	Feedback voltage load regulation	V_OUT = 3.3 V; I_OUT = 1 mA to 300 mA, V_IN = 12 V⁽³⁾		–0.004		%/mA
I_{IN_FB}	Input bias current into FB pin	V_FB = 0.8 V		0	50	nA
t_Start	Regulator start-up time	Time from EN high to device starts switching, V_IN = 5 V		50		µs
t_Ramp	Output voltage ramp time	Time to ramp up V_OUT = 1.8 V, no load		200		µs
I_{LK_SW}	Leakage current into SW pin⁽⁴⁾	VOS = V_IN = V_SW = 1.8 V, EN = GND, device in shutdown mode		1.8	2.85	µA
I_{IN_VOS}	Bias current into VOS pin			0	50	nA
POWER GOOD OUTPUT (PG)
V_{TH_PG}	Power good threshold voltage	Rising V_FB feedback voltage	93%	95%	97%
V_{TH_PG}	Power good threshold voltage	Falling V_FB feedback voltage	87%	90%	93%
V_OL	PG pin output low voltage	Current into PG pin I_PG= 0.4 mA			0.3	V
V_OH	PG pin output high voltage	Open drain output, external pullup resistor			10	V
I_{IN_PG}	Bias current into PG pin	V_(PG) = 3 V, EN = 1.3 V, FB = 0.85 V		0	50	nA