米6体育平台手机版

ZHCSFI8C June 2016 – June 2021 TPS62135

PRODUCTION DATA

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机械数据 (封装 | 引脚)

RGX|11
- MPQF454

散热焊盘机械数据 (封装 | 引脚)

订购信息

7.5 Electrical Characteristics

over operating junction temperature (T_J= -40 °C to +125 °C) and V_IN= 3 V to 17 V. Typical values at V_IN = 12 V and T_A= 25 °C. (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
SUPPLY
I_Q	Operating Quiescent Current	EN = high, I_OUT= 0 mA, Device not switching, T_J= 85 °C				35	µA
I_Q	Operating Quiescent Current	EN = high, I_OUT= 0 mA, Device not switching			18	46	µA
I_SD	Shutdown Current	EN = 0 V, Nominal value at T_J= 25 °C, Max value at T_J= 85 °C			1	8	µA
V_UVLO	Undervoltage Lockout Threshold	Rising Input Voltage		2.8	2.9	3.0	V
V_UVLO	Undervoltage Lockout Threshold	Falling Input Voltage		2.5	2.6	2.7	V
T_SD	Thermal Shutdown Temperature	Rising Junction Temperature			160		°C
T_SD	Thermal Shutdown Hysteresis				20		°C
CONTROL (EN, SS/TR, PG, MODE, VSEL)
V_IH	High Level Input Voltage for VSEL, MODE pin			0.9			V
V_IL	Low Level Input Voltage for VSEL, MODE pin					0.3	V
V_IH	Input Threshold Voltage for EN pin; rising edge			0.77	0.8	0.83	V
V_IL	Input Threshold Voltage for EN pin; falling edge			0.67	0.7	0.73	V
I_{LKG_EN}	Input Leakage Current for EN, VSEL, MODE	V_IH = VIN or V_IL= GND				100	nA
V_{TH_PG}	Power Good Threshold Voltage; dc level	Rising (%V_OUT)		93%	96%	98%
V_{TH_PG}	Hysteresis	Falling (%V_OUT)		3%		4.5%
V_{OL_PG}	Power Good Output Low Voltage	I_PG = 2 mA			0.07	0.3	V
I_{LKG_PG}	Input Leakage Current (PG)	V_PG = 5 V				100	nA
I_SS/TR	SS/TR pin source current				2.5		µA
	I_SS/TR tolerance	T_J= -40 °C to +125 °C			±0.2		µA
	Tracking gain	V_FB / V_SS/TR			1
	Tracking offset	feedback voltage with V_SS/TR = 0 V			11		mV
POWER SWITCH
R_DS(ON)	High-Side MOSFET ON-Resistance	V_IN ≥ 4 V			100	180	mΩ
R_DS(ON)	Low-Side MOSFET ON-Resistance	V_IN ≥ 4 V			39	67	mΩ
I_LIMH	High-Side MOSFET Current Limit	dc value⁽²⁾		4.8	5.6	6.5	A
I_LIML	Low-Side MOSFET Current Limit	dc value⁽²⁾		4.8	5.6	6.5	A
I_LIMNEG	Negative current limit	dc value			1.5		A
f_SW	PWM Switching Frequency	MODE = high; VIN = 12V, VOUT = 3.3V; I_OUT = 1A			2.5		MHz
OUTPUT
V_FB	Feedback Voltage				0.7		V
I_{LKG_FB}	Input Leakage Current (FB)	V_FB= 0.7 V			1	70	nA
V_FB	Feedback Voltage Accuracy⁽¹⁾	V_IN ≥ V_OUT +1 V	PWM mode	-1%		1%
		V_IN ≥ V_OUT +1 V; V_OUT ≥ 1.5 V	PFM mode; Co,eff ≥ 47 µF, L = 1 µH	-1%		2%
		1 V ≤ V_OUT < 1.5 V	PFM mode; Co,eff ≥ 47 µF, L = 1 µH	-1%		2.5%
		V_OUT < 1 V	PFM mode; Co,eff ≥ 75 µF, L = 1 µH	-1%		2.5%
V_FB	Feedback Voltage Accuracy with Voltage Tracking	V_IN ≥ V_OUT +1 V; V_SS/TR = 0.35 V	PWM mode	-2%		7.5%
R_DS(ON)	FB2 resistance to GND when VSEL= high				10	30	Ω
I_{LKG_FB2}	Input Leakage Current in FB2 when VSEL = low				1	70	nA
	Load Regulation	PWM mode operation			0.05		%/A
	Line Regulation	PWM mode operation, I_OUT= 1 A, VIN ≥ Vout + 1 V or VIN ≥ 3.5 V whichever is larger			0.02		%/V
	Output Discharge Resistance	TPS62135 only			100		Ω
t_delay	Start-up Delay time	I_O= 0 mA, Time from EN=high to start switching; VIN applied already			200	300	µs
t_ramp	Ramp time; SS/TR pin open	I_O= 0 mA, Time from first switching pulse until 95% of nominal output voltage; device not in current limit			150		µs

(1) The output voltage accuracy in Power Save Mode can be improved by increasing the output capacitor value, reducing the output voltage ripple (see Section 9.4.1).

(2) See also Section 9.4.4 and Section 9.4.5.