ZHCSDE4A December 2014 – February 2015 TPS62184
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Pin voltage range(2) | VIN1, VIN2 | –0.3 | 20 | V |
EN, PG, SW1, SW2 | –0.3 | VIN + 0.3 | V | |
SS/TR | –0.3 | VIN + 0.3, but ≤ 7 | V | |
FB, VO | –0.3 | 7 | V | |
Power good sink current | PG | 10 | mA | |
Operating junction temperature, TJ | –40 | 150 | °C | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
VESD(1) | Human Body Model (HBM) ESD stress voltage(2) | ±1000 | V | |
Charge device model (CDM) ESD stress voltage | ±500 |
MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|
Supply voltage range, VIN | 4 | 17 | V | |||
Output voltage range, VOUT | 0.9 | 3.5 | V | |||
Maximum Output current, IOUT(max) | 0.9V ≤ VOUT ≤ 1.8V | 6 | A | |||
1.8V ≤ VOUT ≤ 2.5V | 5.5 | A | ||||
2.5V ≤ VOUT ≤ 3.5V | 5 | A | ||||
Operating junction temperature, TJ | –40 | 125 | °C |
THERMAL METRIC(1) | TPS62184 | UNIT | |
---|---|---|---|
YZF (24 PINS) | |||
RθJA | Junction-to-ambient thermal resistance | 61.5 | °C/W |
RθJCtop | Junction-to-case (top) thermal resistance | 0.3 | |
RθJB | Junction-to-board thermal resistance | 10.1 | |
ψJT | Junction-to-top characterization parameter | 0.1 | |
ψJB | Junction-to-board characterization parameter | 10.1 | |
RθJCbot | Junction-to-case (bottom) thermal resistance | n/a |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY | |||||||
VIN | Input voltage range | 4 | 17 | V | |||
IQ | Operating quiescent current | EN = High, IOUT = 0 mA, Device not switching, (TJ = –40°C to +85°C) |
28 | 55 | µA | ||
ISD | Shutdown current | EN = Low (≤ 0.3 V), (TJ = –40°C to +85°C) | 2.8 | 15 | µA | ||
VUVLO | Undervoltage lockout threshold (1) | Falling input voltage | 3.5 | 3.6 | 3.7 | V | |
Hysteresis | 300 | mV | |||||
TSD | Thermal shutdown | Rising junction temperature | 160 | °C | |||
Hysteresis | 20 | ||||||
CONTROL (EN, SS/TR, PG) | |||||||
VH_EN | High-level input threshold voltage (EN) | 0.97 | 1 | 1.03 | V | ||
VL_EN | Low-level input threshold voltage (EN) | 0.87 | 0.9 | 0.93 | V | ||
ILKG_EN | Input leakage current (EN) | EN = VIN or GND | 0.01 | 1.2 | µA | ||
ISS/TR | SS/TR pin source current | 4.5 | 5 | 5.5 | µA | ||
VTH_PG | Power good threshold voltage | Rising (%VOUT) | 94% | 96% | 98% | ||
Falling (%VOUT) | 90% | 92% | 94% | ||||
VOL_PG | Power good output low voltage | IPG= -2 mA | 0.3 | V | |||
ILKG_PG | Input leakage current (PG) | 1 | 100 | nA | |||
POWER SWITCH | |||||||
RDS(ON) | High-side MOSFET ON-resistance | VIN = 7.5 V | Phase 1 | 27 | 65 | mΩ | |
Phase 2 | |||||||
Low-side MOSFET ON-resistance | Phase 1 | 21 | 45 | mΩ | |||
Phase 2 | |||||||
ILIM | High-side MOSFET current limit | Each phase, VIN = 7.5 V | 3.5 | 4.2 | 5.0 | A | |
TPSD | Phase shift delay time | Phase 2 after Phase 1, PWM mode | 250 | ns | |||
OUTPUT | |||||||
VREF | Internal reference voltage | 0.792 | 0.8 | 0.808 | V | ||
ILKG_FB | Input leakage current (FB) | VFB = 0.8 V | 1 | 100 | nA | ||
RDISCHARGE | Output discharge resistance | EN = Low | 60 | Ω | |||
VOUT | Output voltage range | VIN ≥ VOUT | 0.9 | 3.5 | V | ||
Feedback voltage accuracy(2) | PWM Mode, VIN ≥ VOUT + 1 V | –1% | 1% | ||||
Power Save Mode, VOUT = 3.3 V, Iload ≥ 1 mA, L = 1 µH, COUT = 2 x 47 µF, (TJ = –40°C to +85°C) |
-1% | 2% | |||||
Power Save Mode, VOUT = 1.8 V, Iload ≥ 1 mA, L = 1 µH, COUT = 4 x 47 µF, (TJ = –40°C to +85°C) |
|||||||
Power Save Mode, VOUT=0.9V, Iload ≥ 1 mA, L = 1 µH, COUT = 4 x 47 µF, (TJ = –40°C to +85°C) |
–1% | 3% | |||||
Load regulation | PWM Mode operation | 0.06 | %/A | ||||
Line regulation | 4 V ≤ VIN ≤ 17 V, IOUT = 4 A | 0.01 | %/V | ||||
tHICCUP | Hiccup on time | 0.9 | ms | ||||
Hiccup off time | 5 |