SLVS681F June 2006 – August 2014 TPS62400 , TPS62401 , TPS62402 , TPS62403 , TPS62404
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Input voltage range on VIN(2) | –0.3 | 7 | V | ||
Voltage range on EN, MODE/DATA, DEF_1 | –0.3 | VIN +0.3, ≤ 7 | V | ||
current into MODE/DATA | ≤ 0.5 | mA | |||
Voltage on SW1, SW2 | –0.3 | 7 | V | ||
Voltage on ADJ2, FB1 | –0.3 | VIN +0.3, ≤ 7 | V | ||
TJ(max) | Maximum operating junction temperature | 150 | °C | ||
TA | Operating ambient temperature range | –40 | 85 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Tstg | Storage temperature range | –65 | 150 | °C | |
V(ESD) | Electrostatic discharge(3) | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | 1 | kV | |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | 0.5 | ||||
Machine model | 200 | V |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VIN | Supply voltage | 2.5 | 6 | V | ||
VOUT | Output voltage range for adjustable voltage | 0.6 | VIN | V | ||
TA | Operating ambient temperature | -40 | 85 | °C | ||
TJ | Operating junction temperature | -40 | 125 | °C |
THERMAL METRIC(1) | TPS6240x | UNIT | |
---|---|---|---|
VSON | |||
10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 45.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 64.3 | |
RθJB | Junction-to-board thermal resistance | 20.4 | |
ψJT | Junction-to-top characterization parameter | 1.3 | |
ψJB | Junction-to-board characterization parameter | 20.6 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.8 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||
VIN | Input voltage range | 2.5 | 6.0 | V | |||
IQ | Operating quiescent current | One converter, IOUT = 0mA. PFM mode enabled (Mode = 0) device not switching, EN1 = 1 OR EN2 = 1 |
19 | 29 | μA | ||
Two converter, IOUT = 0mA. PFM mode enabled (Mode = 0) device not switching, EN1 = 1 AND EN2 = 1 |
32 | 48 | μA | ||||
IOUT = 0mA, MODE/DATA = GND, for one converter, VOUT 1.575V(1) | 23 | μA | |||||
IOUT = 0mA, MODE/DATA = VIN, for one converter, VOUT 1.575V (1) | 3.6 | mA | |||||
ISD | Shutdown current | EN1, EN2 = GND, VIN = 3.6V(2) | 1.2 | 3 | μA | ||
EN1, EN2 = GND, VIN ramped from 0V to 3.6V(3) | 0.1 | 1 | |||||
VUVLO | Undervoltage lockout threshold | Falling | 1.5 | 2.35 | V | ||
Rising | 2.4 | ||||||
ENABLE EN1, EN2 | |||||||
VIH | High-level input voltage range, EN1, EN2 | 1.2 | VIN | V | |||
VIL | Low-level input voltage range, EN1, EN2 | 0 | 0.4 | V | |||
IIN | Input bias current, EN1, EN2 | EN1, EN2 = GND or VIN | 0.05 | 1.0 | μA | ||
DEF_1 INPUT | |||||||
VDEF_1H | DEF_1 high level input voltage range | VOUT1 = fixed output voltage option | 0.9 | VIN | V | ||
VDEF_1L | DEF_1 low level input voltage range | VOUT1 = fixed output voltage option | 0 | 0.4 | V | ||
IIN | Input bias current DEF_1 | DEF_1 GND or VIN | 0.01 | 1.0 | μA | ||
MODE/DATA | |||||||
VIH | High-level input voltage range, MODE/DATA | 1.2 | VIN | V | |||
VIL | Low-level input voltage range, MODE/DATA | 0 | 0.4 | V | |||
IIN | Input bias current, MODE/DATA | MODE/DATA = GND or VIN | 0.01 | 1.0 | μA | ||
VOH | Acknowledge output voltage high | Open drain, via external pullup resistor | VIN | V | |||
VOL | Acknowledge output voltage low | Open drain, sink current 500μA | 0 | 0.4 | V | ||
INTERFACE TIMING | |||||||
tStart | Start time | 2 | μs | ||||
tH_LB | High time low bit, logic 0 detection | Signal level on MODE/DATA pin is > 1.2V | 2 | 200 | μs | ||
tL_LB | Low time low bit, logic 0 detection | Signal level on MODE/DATA pin < 0.4V | 2x tH_LB | 400 | μs | ||
tL_HB | Low time high bit, logic 1 detection | Signal level on MODE/DATA pin < 0.4V | 2 | 200 | μs | ||
tH_HB | High time high bit, logic 1 detection | Signal level on MODE/DATA pin is > 1.2V | 2x tL_HB | 400 | μs | ||
TEOS | End of Stream | TEOS | 2 | μs | |||
tACKN | Duration of acknowledge condition (MODE/DATE line pulled low by the device) | VIN 2.5V to 6V | 400 | 520 | μs | ||
tvalACK | Acknowledge valid time | 2 | μs | ||||
ttimeout | Timeout for entering power save mode | MODE/DATA Pin changes from high to low | 520 | μs | |||
POWER SWITCH | |||||||
RDS(ON) | P-Channel MOSFET on-resistance, Converter 1,2 | VIN = VGS = 3.6V | 280 | 620 | mΩ | ||
ILK_PMOS | P-Channel leakage current | VDS = 6.0V | 1 | μA | |||
RDS(ON) | N-Channel MOSFET on-resistance Converter 1,2 | VIN = VGS = 3.6V | 200 | 450 | mΩ | ||
ILK_SW1/SW2 | Leakage current into SW1/SW2 pin | Includes N-Chanel leakage current, VIN = open, VSW = 6.0V, EN = GND(4) |
6 | 7.5 | μA | ||
ILIMF | Forward Current Limit PMOS and NMOS | OUTPUT 1 | 2.5V ≤ VIN ≤ 6.0V | 0.68 | 0.8 | 0.92 | A |
OUTPUT 2 | 0.85 | 1.0 | 1.15 | ||||
TSD | Thermal shutdown | Increasing junction temperature | 150 | °C | |||
Thermal shutdown hysteresis | Decreasing junction temperature | 20 | °C | ||||
OSCILLATOR | |||||||
fSW | Oscillator frequency | 2.5V ≤ VIN ≤ 6V | 2.0 | 2.25 | 2.5 | MHz | |
OUTPUT | |||||||
VOUT | Adjustable output voltage range | 0.6 | VIN | V | |||
Vref | Reference voltage | 600 | mV | ||||
VOUT (PFM) | DC output voltage accuracy adjustable and fixed output voltage(7) | Voltage positioning active, MODE/DATA = GND, device operating in PFM mode, VIN = 2.5V to 5.0V (5)(8) |
–1.5% | 1.01 VOUT | 2.5% | ||
VOUT(PWM) | MODE/DATA = GND; device operating in PWM Mode, VIN = 2.5V to 6.0V(8) |
–1% | 0% | 1% | |||
VIN = 2.5V to 6.0V, Mode/Data = VIN , Fixed PWM operation, 0mA < IOUT1 < 400mA ; 0mA < IOUT2 < 600mA(6) |
–1% | 0% | 1% | ||||
DC output voltage load regulation | PWM operation mode | 0.5 | %/A | ||||
tStart up | Start-up time | Activation time to start switching(9) | 170 | μs | |||
tRamp | VOUT Ramp UP time | Time to ramp from 5% to 95% of VOUT | 750 | μs |