ZHCSHZ2E December 2014 – March 2022 TPS62406-Q1 , TPS62407-Q1 , TPS62422-Q1 , TPS62423-Q1 , TPS62424-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||
VIN | Input voltage range | 2.5 | 6 | V | |||
IQ | Operating quiescent current | One converter, no load on the output. PFM mode enabled (MODE/DATA = GND) device not switching, EN1 = 1 or EN2 = 1 | 19 | 35 | μA | ||
Two converters, no load on the output. PFM mode enabled (MODE/DATA = GND) device not switching, EN1 = EN2 = 1 | 32 | 50 | |||||
No load on the output, MODE/DATA = GND, for one converter(1) | 23 | ||||||
No load on the output, MODE/DATA = VIN, for one converter(1) | 3.6 | mA | |||||
ISD | Shutdown current | EN1, EN2 = GND, VIN = 3.6 V(2) | 1.2 | 3 | μA | ||
EN1, EN2 = GND, VIN ramped from 0 V to 3.6 V(3) | 0.1 | 1.5 | |||||
VUVLO | Undervoltage lockout threshold | Falling | 1.5 | 2.35 | V | ||
Rising | 2.4 | ||||||
ENABLE EN1, EN2 | |||||||
VIH | High-level input voltage range, EN1, EN2 | 1.2 | VIN | V | |||
VIL | Low-level input voltage range, EN1, EN2 | 0 | 0.4 | V | |||
IIN | Input bias current, EN1, EN2 | EN1, EN2 = GND or VIN | 0.05 | 1 | μA | ||
DEF_1 INPUT | |||||||
VDEF_1H | DEF_1 high-level digital input voltage range | 0.9 | VIN | V | |||
VDEF_1L | DEF_1 low-level digital input voltage range | 0 | 0.4 | V | |||
IIN | Input bias current DEF_1 | DEF_1 = GND or VIN | 0.01 | 1 | μA | ||
MODE/DATA | |||||||
VIH | High-level input voltage range, MODE/DATA | 1.2 | VIN | V | |||
VIL | Low-level input voltage range, MODE/DATA | 0 | 0.4 | V | |||
IIN | Input bias current, MODE/DATA | MODE/DATA = GND or VIN | 0.01 | 1 | μA | ||
VOH | Acknowledge output voltage high | Open drain, through external pullup resistor | VIN | V | |||
VOL | Acknowledge output voltage low | Open drain, sink current 500 μA | 0 | 0.4 | V | ||
POWER SWITCH | |||||||
rDS(on) | P-channel MOSFET on-resistance, converter 1 and 2 | VIN = VGS = 3.6 V | 280 | 620 | mΩ | ||
ILK_PMOS | P-channel leakage current | VDS = 6 V | 1 | μA | |||
rDS(on) | N-channel MOSFET on-resistance converter 1 and 2 | VIN = VGS = 3.6 V | 200 | 450 | mΩ | ||
ILK_SW1/SW2 | Leakage current into SW1 or SW2 pin | Includes N-channel leakage current, VIN = open, VSW = 6 V, EN = GND(4) | 6 | 7.5 | μA | ||
ILIMF | Forward current limit PMOS and NMOS | TPS62406-Q1 VOUT1 | 2.5 V ≤ VIN ≤ 6 V | 1.18 | 1.4 | 1.61 | A |
TPS62406-Q1 VOUT2 | 2.5 V ≤ VIN ≤ 6 V | 0.68 | 0.8 | 0.92 | |||
TPS62407-Q1 VOUT1 | 2.5 V ≤ VIN ≤ 6 V | 0.68 | 0.8 | 0.92 | |||
TPS62407-Q1 VOUT2 | 2.5 V ≤ VIN ≤ 6 V | 0.75 | 1 | 1.15 | |||
TPS62422-Q1 VOUT1 | 2.5 V ≤ VIN ≤ 6 V | 1.18 | 1.4 | 1.61 | |||
TPS62422-Q1 VOUT2 | 2.5 V ≤ VIN ≤ 6 V | 0.75 | 1 | 1.15 | |||
TPS62423-Q1 VOUT1 | 2.5 V ≤ VIN ≤ 6 V | 1 | 1.2 | 1.38 | |||
TPS62423-Q1 VOUT2 | 2.5 V ≤ VIN ≤ 6 V | 1 | 1.2 | 1.38 | |||
TPS62424-Q1 VOUT1 | 2.5 V ≤ VIN ≤ 6 V | 1 | 1.2 | 1.38 | |||
TPS62424-Q1 VOUT2 | 2.5 V ≤ VIN ≤ 6 V | 1 | 1.2 | 1.38 | |||
TSD | Thermal shutdown | Increasing junction temperature | 150 | °C | |||
Thermal shutdown hysteresis | Decreasing junction temperature | 20 | °C | ||||
OUTPUT | |||||||
Vref | Internal Reference voltage | 600 | mV | ||||
VOUTx(PFM) | DC output voltage accuracy | Voltage positioning active, MODE/DATA = GND, device operating in PFM mode, VIN = 2.5 V to 5 V(5)(6) | –1.5% | 1% | 2.5% | ||
VOUTx(PWM) | MODE/DATA = GND; device operating in PWM mode, VIN = 2.5 V to 6 V(6) | –1% | 0% | 1% | |||
VIN = 2.5 V to 6 V, MODE/DATA = VIN, Fixed PWM operation, 0 mA < IOUT1 < 400 mA ; 0 mA < IOUT2 < 600 mA(7) | –1% | 0% | 1% | ||||
DC output voltage load regulation | PWM operation mode | 0.5 | %/A |