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SLVS952G April 2010 – January 2017 TPS62671 , TPS62672 , TPS62674 , TPS62675 , TPS626751 , TPS626765 , TPS62679

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

YFD|6
- MXBG101E

散热焊盘机械数据 (封装 | 引脚)

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8 Specifications

8.1 Absolute Maximum Ratings⁽¹⁾

		MIN	MAX	UNIT
Input Voltage	Voltage at VIN⁽²⁾, SW⁽³⁾	–0.3	6	V
	Voltage at FB⁽³⁾	–0.3	3.6	V
	Voltage at EN, MODE ⁽³⁾	–0.3	V_I + 0.3	V
T_A	Operating temperature range⁽⁴⁾	–40	85	°C
T_J	Operating junction temperature		150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Operation above 4.8V input voltage for extended periods may affect device reliability.

(3) All voltage values are with respect to network ground terminal.

(4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T_A(max)) is dependent on the maximum operating junction temperature (T_J(max)), the maximum power dissipation of the device in the application (P_D(max)), and the junction-to-ambient thermal resistance of the part/package in the application (θ_JA), as given by the following equation: T_A(max)= T_J(max)–(θ_JA X P_D(max)). To achieve optimum performance, it is recommended to operate the device with a maximum junction temperature of 105°C.

8.2 Handling Ratings

		MIN	MAX	UNIT
Tstg	Storage temperature range	–65	150	°C
V_ESD	Human Body Model (HBM) ESD stress voltage⁽¹⁾	–2	2	kV
	Charge device model (CDM) ESD stress voltage⁽²⁾	–1	1	kV
	Machine Model (MM) ESD Stress Voltage⁽³⁾	–200	200	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(3) The machine model is a 200pF capacitor discharged directly into ech pin.

8.3 Recommended Operating Conditions

			MIN	NOM	MAX	UNIT
V_I	Input voltage range		2.3		4.8⁽²⁾	V
I_O	Output current range	TPS62671,TPS62674, TPS62679	0		500	mA
I_O	Output current range	TPS62672,TPS62675, TPS626751, TPS626765	0		650	mA
L	Inductance		0.3		1.8	µH
C_O	Output capacitance (PFM/PWM operation)		0.8	2.5	10	µF
C_O	Output capacitance (PWM operation)		0.8	2.5	10	µF
T_A	Ambient temperature		–40		+85	°C
T_J	Operating junction temperature		–40		+125	°C

8.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS62679	TPS6267X	UNIT
THERMAL METRIC⁽¹⁾		YFM (6 PINS)	YFD (6 PINS)	UNIT
R_θJA	Junction-to-ambient thermal resistance		125	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance		-
R_θJB	Junction-to-board thermal resistance		53
ψ_JT	Junction-to-top characterization parameter		-
ψ_JB	Junction-to-board characterization parameter		-
R_θJC(bot)	Junction-to-case (bottom) thermal resistance		-

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

Minimum and maximum values are at V_I = 2.3V to 5.5V, V_O = 1.8V, EN = 1.8V, AUTO mode and T_A = –40°C to 85°C; Circuit of Parameter Measurement Information section (unless otherwise noted). Typical values are at V_I = 3.6V, V_O = 1.8V, EN = 1.8V, AUTO mode and T_A = 25°C (unless otherwise noted).

PARAMETER			TEST CONDITIONS		MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_Q	Operating quiescent current	TPS62671 TPS62672 TPS62675 TPS62679 TPS626751 TPS626765	I_O = 0mA. Device not switching			17	40	μA
		TPS62671 TPS62672 TPS626751 TPS626765	I_O = 0mA, PWM mode			5.5		mA
		TPS62674 TPS62679	I_O = 0mA, PWM mode			5.0		mA
I_(SD)	Shutdown current		EN = GND			0.2	1	μA
UVLO	Undervoltage lockout threshold					2.05	2.1	V
ENABLE, MODE
V_IH	High-level input voltage	TPS62671 TPS62672 TPS62675 TPS626751 TPS626765			1.0			V
V_IL	Low-level input voltage						0.4	V
I_lkg	Input leakage current		Input connected to GND or VIN			0.01	1.5	μA
V_IH	High-level input voltage (ENABLE)	TPS62674 TPS62679			1.26			V
V_IH	High-level input voltage (MODE)				1.0			V
V_IL	Low-level input voltage (ENABLE)						0.54	V
V_IL	Low-level input voltage (MODE)	TPS62679					0.4	V
I_lkg	Input leakage current	TPS62674 TPS62679	Input connected to GND or VIN			0.01	1.5	μA
C_IN	Input capacitance (ENABLE)					5		pF
EXTCLK	Clock presence detect frequency	TPS62674 TPS62679			4		27	MHz
EXTCLK	Clock presence detect duty cycle	TPS62674 TPS62679			40%		60%
POWER SWITCH
r_DS(on)	P-channel MOSFET on resistance		V_I = V_(GS) = 3.6V. PWM mode			170		mΩ
r_DS(on)	P-channel MOSFET on resistance		V_I = V_(GS) = 2.5V. PWM mode			230		mΩ
I_lkg	P-channel leakage current, PMOS		V_(DS) = 5.5V, -40°C ≤ T_J ≤ 85°C				1	μA
r_DS(on)	N-channel MOSFET on resistance		V_I = V_(GS) = 3.6V. PWM mode			120		mΩ
r_DS(on)	N-channel MOSFET on resistance		V_I = V_(GS) = 2.5V. PWM mode			180		mΩ
I_lkg	N-channel leakage current, NMOS		V_(DS) = 5.5V, -40°C ≤ T_J ≤ 85°C				2	μA
r_DIS	Discharge resistor for power-down sequence		TPS62674, TPS626751, TPS626765, TPS62679			70	150	Ω
	P-MOS current limit		2.3V ≤ V_I ≤ 4.8V. Open loop	TPS62671 TPS62674 TPS62679	900	1000	1150	mA
	P-MOS current limit		2.3V ≤ V_I ≤ 4.8V. Open loop	TPS62672 TPS62675 TPS626751 TPS626765	1000	1100	1250	mA
	Input current limit under short-circuit conditions		V_O shorted to ground			12		mA
	Thermal shutdown					140		°C
	Thermal shutdown hysteresis					10		°C
OSCILLATOR
f_SW	Oscillator center frequency	TPS62671 TPS62672 TPS62675 TPS626751 TPS626765	I_O = 0mA. PWM operation		5.4	6	6.6	MHz
f_SW	Oscillator center frequency	TPS62674 TPS62679	I_O = 0mA. PWM operation		4.9	5.45	6.0	MHz
OUTPUT
V_OUT	Regulated DC output voltage	TPS62671 TPS62679	2.3V ≤ V_I ≤ 4.8V, 0mA ≤ I_O ≤ 500 mA PFM/PWM operation		0.98×V_NOM	V_NOM	1.03×V_NOM	V
			2.3V ≤ V_I ≤ 5.5V, 0mA ≤ I_O ≤ 500 mA PFM/PWM operation		0.98×V_NOM	V_NOM	1.04×V_NOM	V
			2.3V ≤ V_I ≤ 5.5V, 0mA ≤ I_O ≤ 500 mA PWM operation		0.98×V_NOM	V_NOM	1.02×V_NOM	V
		TPS62674	2.3V ≤ V_I ≤ 5.5V, 0mA ≤ I_O ≤ 500 mA PWM operation		0.98×V_NOM	V_NOM	1.02×V_NOM	V
		TPS62672 TPS62675 TPS626751 TPS626765	2.3V ≤ V_I ≤ 4.8V, 0mA ≤ I_O ≤ 650 mA PFM/PWM operation		0.98×V_NOM	V_NOM	1.03×V_NOM	V
		TPS62672 TPS62675 TPS626751 TPS626765	2.3V ≤ V_I ≤ 5.5V, 0mA ≤ I_O ≤ 650 mA PWM operation		0.98×V_NOM	V_NOM	1.02×V_NOM	V
	Line regulation		V_I = V_O + 0.5V (min 2.3V) to 5.5V, I_O = 200 mA			0.23		%/V
	Load regulation		I_O = 0mA to 500 mA. PWM operation			–0.00045		%/mA
	Feedback input resistance					480		kΩ
ΔV_O	Power-save mode ripple voltage	TPS62671	I_O = 1mA, V_O = 1.8 V			14		mV_PP
ΔV_O	Power-save mode ripple voltage	TPS62672 TPS62675 TPS626751 TPS626765 TPS62679	I_O = 1mA, V_O = 1.2 V			16		mV_PP
TIMING
	Start-up time	TPS62671	I_O = 0mA, Time from active EN to V_O			130		μs
		TPS62674 TPS626751 TPS626765	I_O = 0mA, Time from EXTCLK clock active to V_O			125		μs
		TPS62679	I_O = 0mA, Time from EXTCLK clock active to V_O L = 1μH DCR = 240mΩ 0603 (TY CKP1608S1R0) C_O = 2.2μF 4V 0402 (TY AMK105BJ225MP)			430		μs
	Shutdown time	TPS62674 TPS62679	I_O = 0mA, Time from EXTCLK clock inactive to V_O down C_O = 4.7μF 6.3V 0402 (Murata GRM155R60J475M)			1.2		ms
	Shutdown time	TPS62674 TPS62679	I_O = 0mA, Time from EXTCLK clock inactive to V_O down L = 1μH DCR = 240mΩ 0603 (TY CKP1608S1R0) C_O = 2.2μF 4V 0402 (TY AMK105BJ225MP)			600		μs