ZHCS322D May   2011  – December 2014 TPS62730 , TPS62732 , TPS62733

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 DCS-Control™
      2. 9.3.2 ON/BYP Mode Selection
      3. 9.3.3 STAT Open-Drain Output
    4. 9.4 Device Functional Modes
      1. 9.4.1 Start-Up
      2. 9.4.2 Automatic Transition from DC-DC to Bypass Operation
      3. 9.4.3 Internal Current Limit
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Output Filter Design (Inductor and Output Capacitor)
        2. 10.2.2.2 Inductor Selection
        3. 10.2.2.3 DC-DC Output Capacitor Selection
        4. 10.2.2.4 Additional Decoupling Capacitors
        5. 10.2.2.5 Input Capacitor Selection
          1. 10.2.2.5.1 Input Buffer Capacitor Selection
        6. 10.2.2.6 Checking Loop Stability
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 相关链接
    3. 13.3 商标
    4. 13.4 静电放电警告
    5. 13.5 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage(2) VIN, SW, VOUT –0.3 4.2 V
ON/BYP, STAT –0.3 VIN + 0.3 ≤ 4.2 V
Operating junction temperature, TJ –40 125 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network ground pin.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model (MM), all pins ±150
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

8.3 Recommended Operating Conditions

Operating ambient temperature TA = –40 to 85°C (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage VIN 1.9 3.9 V
Effective inductance 1.5 2.2 3 μH
Effective output capacitance connected to VOUT 1.0 10 μF
Operating junction temperature range, TJ –40 125 °C
TA Operating free air temperature range -40 85

8.4 Thermal Information

THERMAL METRIC(1) TPS6273x UNIT
DRY
6 PINS
θJA Junction-to-ambient thermal resistance 293.8 °C/W
θJCtop Junction-to-case (top) thermal resistance 165.1
θJB Junction-to-board thermal resistance 160.8
ψJT Junction-to-top characterization parameter 27.3
ψJB Junction-to-board characterization parameter 159.6
θJCbot Junction-to-case (bottom) thermal resistance 65.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

VIN = 3.0 V, VOUT = 2.1 V, ON/BYP = VIN, TA = –40°C to 85°C typical values are at TA = 25°C (unless otherwise noted), CIN = 2.2 μF, L = 2.2 μH, COUT = 2.2 μF
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 1.9 3.9 V
IQ Operating quiescent current ON/BYP = high, IOUT = 0mA. VIN = 3 V
device not switching		 25 40 μA
IOUT = 0 mA. device switching, VIN = 3.0 V, VOUT = 2.1 V 34
ON/BYP = high, Bypass switch active, VIN = VOUT = 2.1 V 23
ISD Shutdown current, Bypass Switch Activated(2) ON/BYP = GND, leakage current into VIN 30 550 nA
ON/BYP = GND, leakage current into VIN, TA = 60°C 110
ON/BYP
VIH TH Threshold for detecting high ON/BYP 1.9 V ≤ VIN ≤ 3.9 V , rising edge 0.8 1 V
VIL TH Threshold for detecting low ON/BYP 1.9 V ≤ VIN ≤ 3.9 V , falling edge 0.4 0.6 V
IIN Input bias Current 0 50 nA
POWER SWITCH
RDS(ON) High side MOSFET on-resistance VIN = 3.0 V 600 mΩ
Low Side MOSFET on-resistance 350
ILIMF Forward current limit MOSFET high side VIN = 3.0 V, open loop 410 mA
Forward current limit MOSFET low side 410 mA
BYPASS SWITCH
RDS(ON) Bypass Switch on-resistance VIN = 2.1 V, IOUT = 20 mA, TJmax = 85°C 2.9 3.8 Ω
VIN = 3 V 2.1
VIT BYP Automatic Bypass Switch Transition Threshold (Activation / Deactivation) ON/BYP = high TPS62730 (2.1 V) ON / falling VIN 2.14 2.20 2.3 V
OFF/ rising VIN 2.19 2.25 2.35
TPS62731 (2.05 V) ON / falling VIN 2.15
OFF / rising VIN 2.20
TPS62732 (1.9 V) ON / falling VIN 2.05
OFF / rising VIN 2.10
TPS62733 (2.3 V) ON / falling VIN 2.41
OFF/ rising VIN 2.48
TPS62734 (2.1 V) ON / falling VIN 2.23
OFF / rising VIN 2.28
TPS62735 (2.3 V) ON / falling VIN 2.23
OFF / rising VIN 2.33
STAT STATUS OUTPUT (OPEN DRAIN)
VTSTAT Threshold level for STAT OUTPUT in % from VOUT ON/BYP = high and regulator is ready, VIN falling 95%
ON/BYP = high and regulator is ready, VIN rising(3) 98%
VOL Output Low Voltage Current into STAT pin I = 500 μA, VIN = 2.3 V 0.4 V
VOH Output High Voltage Open drain output, external pull up resistor VIN
ILKG Leakage into STAT pin ON/BYP = GND, VIN = VOUT = 3 V 0 50 nA
REGULATOR
tONmin Minimum ON time VIN = 3.0 V, VOUT = 2.1 V, IOUT = 0 mA 180 ns
tOFFmin Minimum OFF time VIN = 2.3 V 50 ns
tStart Regulator start up time from transition ON/BYP = high to STAT = low VIN = 3.0 V, VOUT = 3.0 V 50 μs
OUTPUT
VREF Internal Reference Voltage 0.70 V
VVOUT VOUT Feedback Voltage Comparator Threshold Accuracy VIN = 3.0 V TA = 25°C –1.5% 0% 1.5%
TA = –40°C to 85°C –2.5% 0% 2.5%
DC output voltage load regulation IOUT = 1 mA to 50 mA VIN = 3.0 V, VOUT = 2.1 V -0.01 %/mA
DC output voltage line regulation IOUT = 20 mA, 2.4 V ≤ VIN ≤ 3.9 V 0.01 %/V
ILK_SW Leakage current into SW pin VIN = VOUT = VSW = 3.0 V, ON/Byp= GND (1) 0.0 100 nA
(1) The internal resistor divider network is disconnected from VOUT pin.
(2) Shutdown current into VIN pin, includes internal leakage
(3) The STAT output comparator is enabled once the rising input voltage exceeds the minimum input voltage VIN min of 1.9 V. In case of the 1.9 V output voltage option, the STAT output is active once the rising input voltage VIN exceeds 1.9 V.

8.6 Typical Characteristics

TPS62730 TPS62732 TPS62733 isd_lvsac3.gif Figure 1. Shutdown Current Bypass Mode vs Input Voltage
TPS62730 TPS62732 TPS62733 rds_byp_lvsac3.gif Figure 3. rDS(ON) Bypass vs Input Voltage
TPS62730 TPS62732 TPS62733 rds_nmos_lvsac3.gif Figure 5. rDS(ON) NMOS vs Input Voltage
TPS62730 TPS62732 TPS62733 iq_lvsac3.gif Figure 2. Operating Quiescent Current vs Input Voltage
TPS62730 TPS62732 TPS62733 rds_pmos_lvsac3.gif Figure 4. rDS(ON) PMOS vs Input Voltage
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