TPS62830x devices incorporate advanced techniques to minimize Electromagnetic Interference (EMI) and makes complying with stringent EMI standards simple. By integrating capacitors directly onto the silicon, parasitic elements are reduced and loop area is minimized, effectively reducing high-frequency noise emissions primarily above 450 MHz. The on-chip capacitors ensure low-inductance paths for high-frequency AC switching current and damping voltage ringing.

Additionally to the on-chip capacitors, the gate driver has been improved with advanced slew rate control mechanisms and by smoothing the supply voltage. The switch node voltage is controlled in a way to reduce sharp edges and minimize voltage overshoot, consequently diminishing EMI.

The above plot is measured on the EVM with the TPS628304ARZER and standard BOM. There is no notable difference on EMI performance between available packages.

IOUT = 4 A

VIN = 5.5 V

VOUT = 1.8 V

Figure 7-6 Radiated EMI Performance (CISPR11 Radiated Emission Test with Class A and Class B Limits)