ZHCSNO6B February 2023 – March 2024 TPS628301 , TPS628302 , TPS628303 , TPS628304
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| IQ | Operating quiescent current | EN = VIN, IOUT = 0 mA, VOUT = 1.8 V, MODE = GND, device not switching | 7 | 17 | µA | |
| ISD | VIN shutdown supply current | EN = low, TJ = –40oC to 85oC | 100 | 700 | nA | |
| VUVLO(+) | Rising UVLO threshold voltage (VIN) | 2.05 | 2.15 | 2.25 | V | |
| VUVLO(hys) | UVLO hysteresis (VIN) | 90 | 120 | mV | ||
| THERMAL SHUTDOWN | ||||||
| TJ(SD) | Thermal shutdown threshold | TJ rising | 150 | °C | ||
| TJ(HYS) | Thermal shutdown hysteresis | 20 | °C | |||
| LOGIC PINs | ||||||
| VEN(+) | High-level input voltage (EN) | 0.8 | V | |||
| VEN(-) | Low-level input voltage (EN) | 0.35 | V | |||
| VMODE(+) | High-level input voltage (MODE) | 0.8 | V | |||
| VMODE(-) | Low-level input voltage (MODE) | 0.35 | V | |||
| IEN(LKG) | EN Input leakage current | VEN = HIGH | 10 | 100 | nA | |
| IMODE(LKG) | MODE Input leakage current | VMODE = HIGH | 10 | 100 | nA | |
| STARTUP | ||||||
| tSS | Internal fixed soft-start time | From VOUT = 0 to VOUT = 95% | 180 | 300 | 440 | µs |
| tSS | Internal fixed soft-start time | From VOUT= 0 to VOUT= 95%; only TPS62830xK versions | 530 | 880 | 1300 | µs |
| td(EN) | Enable delay time | From EN HIGH to device starts switching | 120 | 220 | µs | |
| REFERENCE VOLTAGE | ||||||
| VFB | Feedback voltage accuracy | PWM mode | 495 | 500 | 505 | mV |
| VFB | Feedback voltage accuracy | PWM mode | –1 | +1 | % | |
| VFB | Feedback voltage accuracy | PFM mode, COUT,eff ≥ 15 µF, L = 0.47 µH | –1 | +2 | % | |
| IFB(LKG) | FB input leakage current, adjustable version | VFB = 0.5 V | 10 | 70 | nA | |
| IVOS(LKG) | VOS input leakage current | VEN = low | 100 | 500 | nA | |
| POWER GOOD | ||||||
| VPG,UV(+) | Rising power-good threshold voltage (output undervoltage) |
Power Good low, VFB rising | 94 | 96 | 98 | % |
| VPG,UV(-) | Falling power-good threshold voltage (output undervoltage) |
Power Good high, VFB falling | 90 | 92 | 94 | % |
| VPG,OV(+) | Rising power-good threshold voltage (output overvoltage) |
Power Good high, VFB rising | 108 | 110 | 112 | % |
| VPG,OV(-) | Falling power-good threshold voltage (output overvoltage) |
Power Good low, VFB falling | 102.5 | 105 | 107 | % |
| td(PG) | Power good delay at start-up | Low-to-high transition on the PG pin at start up | 128 | µs | ||
| td(PG) | Power good deglitch delay during operation | High-to-low or low-to-high transition on the PG pin | 30 | 45 | 60 | µs |
| IPG(LKG) | PG pin Leakage current when open drain output is high | VPG = 5.0 V | 10 | 100 | nA | |
| VPG,OL | PG pin low-level output voltage | IPG = 1 mA | 0.4 | V | ||
| POWER STAGE | ||||||
| RDSON(HS) | High-side MOSFET on-resistance | VIN ≥ 5 V | 35 | 57 | mΩ | |
| RDSON(LS) | Low-side MOSFET on-resistance | VIN ≥ 5 V | 18 | 29 | mΩ | |
| fSW | Switching frequency, PWM mode | IOUT = 1 A, VOUT = 1.8 V | 2.0 | MHz | ||
| OVERCURRENT PROTECTION | ||||||
| IHS(OC) | High-side peak current limit | TPS628301 | 1.8 | 2.1 | 2.6 | A |
| IHS(OC) | High-side peak current limit | TPS628302 | 2.7 | 3.3 | 3.9 | A |
| IHS(OC) | High-side peak current limit | TPS628303 | 4.0 | 4.6 | 5.4 | A |
| IHS(OC) | High-side peak current limit | TPS628304 | 5.0 | 5.9 | 7.0 | A |
| ILS(NOC) | Low-side negative current limit | Sinking current limit on LS FET | –1.8 | A | ||
| OUTPUT DISCHARGE | ||||||
| IDIS | Output discharge current on SW pin | VIN > 2 V, VSW = 0.4 V, EN = LOW | 75 | 400 | mA | |
| OUTPUT OVP | ||||||
| VOVP | Overvoltage-protection (OVP) threshold voltage | VFB rising; devices with OVP feature only | 108 | 110 | 112 | % |
| td(OVP) | OVP delay | Devices with OVP feature only | 35 | µs | ||