ZHCSN71E December   2021  – June 2024 TPS62A01 , TPS62A01A , TPS62A02 , TPS62A02A

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Save Mode
      2. 7.3.2 100% Duty Cycle Low Dropout Operation
      3. 7.3.3 Soft Start
      4. 7.3.4 Switch Current Limit and Short-Circuit Protection (HICCUP)
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable and Disable
      2. 7.4.2 Power Good
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting the Output Voltage
        2. 8.2.2.2 Output Filter Design
        3. 8.2.2.3 Input and Output Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

7.3.2 100% Duty Cycle Low Dropout Operation

The device offers low input-to-output voltage difference by entering 100% duty cycle mode. In this mode, the high-side MOSFET switch is constantly turned on and the low-side MOSFET is switched off. The minimum input voltage to maintain output regulation, depending on the load current and output voltage, is calculated as:

Equation 1. VIN(MIN) = VOUT + IOUT × (RDS(ON) + RL)

where

  • RDS(ON) = High-side FET on-resistance
  • RL = Inductor ohmic resistance (DCR)
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