ZHCSN71E December   2021  – June 2024 TPS62A01 , TPS62A01A , TPS62A02 , TPS62A02A

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Save Mode
      2. 7.3.2 100% Duty Cycle Low Dropout Operation
      3. 7.3.3 Soft Start
      4. 7.3.4 Switch Current Limit and Short-Circuit Protection (HICCUP)
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable and Disable
      2. 7.4.2 Power Good
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting the Output Voltage
        2. 8.2.2.2 Output Filter Design
        3. 8.2.2.3 Input and Output Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

TJ = –40°C to +125°C, VIN = 2.5 V to 5.5 V. Typical values are at TJ = 25°C and VIN = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ(VIN) VIN quiescent current Non-switching; VEN = High; VFB = 610 mV; TPS62A01xDRL 20 µA
IQ(VIN) VIN quiescent current Non-switching; VEN = High; VFB = 610 mV; TPS62A01xDDC; TPS62A02 23 µA
ISD(VIN) VIN shutdown supply current VEN = Low 0.01 2 µA
UVLO
VUVLO(R) VIN UVLO rising threshold VIN rising 2.3 2.4 2.5 V
VUVLO(F) VIN UVLO falling threshold VIN falling 2.2 2.3 2.4 V
ENABLE
VEN(R) EN voltage rising threshold EN rising; enable switching 1.2 V
VEN(F) EN voltage falling threshold EN falling, disable switching 0.4 V
VEN(LKG) EN Input leakage current VEN = 5 V 100 nA
REFERENCE VOLTAGE
VFB FB voltage TJ = 0°C to 125°C, PWM mode 594 600 606 mV
VFB FB voltage PWM mode 591 600 609 mV
IFB(LKG) FB input leakage current VFB = 0.6 V 100 nA
SWITCHING FREQUENCY
fSW(FCCM) Switching frequency, FPWM operation VIN = 5 V; VOUT = 1.8 V 2400 kHz
STARTUP
Internal fixed soft-start time From EN = High to VFB = 0.56 V 1 ms
POWER STAGE
RDSON(HS) High-side MOSFET on-resistance TPS62A01xDRL; VIN = 5 V 180
RDSON(LS) Low-side MOSFET on-resistance TPS62A01xDRL; VIN = 5 V 120
RDSON(HS) High-side MOSFET on-resistance VIN = 5 V; TPS62A01xDDC; TPS62A02 100
RDSON(LS) Low-side MOSFET on-resistance VIN = 5 V; TPS62A01xDDC; TPS62A02 67
OVERCURRENT PROTECTION
IHS(OC) High-side peak current limit TPS62A01 1.3 1.8 A
ILS(OC) Low-side valley current limit TPS62A01 1.8 A
IHS(OC) High-side peak current limit TPS62A02 2.7 3.4 A
ILS(OC) Low-side valley current limit TPS62A02xDRL 4.2 A
ILS(OC) Low-side valley current limit TPS62A02xDDC 3.15 A
POWER GOOD
VPGTH Power Good threshold PG low, FB falling 93.5 %
VPGTH Power Good threshold PG high, FB rising 96 %
PG delay falling 35 µs
PG delay rising 10 µs
IPG(LKG) PG pin Leakage current when open drain output is high VPG = 5 V 100 nA
PG pin output low-level voltage IPG = 1 mA 400 mV
OUTPUT DISCHARGE
Output discharge current on SW pin VIN = 3 V, VOUT = 2.0 V; TPS62A01xDRL 60 mA
Output discharge current on SW pin VIN = 3 V, VOUT = 2.0 V; TPS62A01xDDC; TPS62A02 76 mA
THERMAL SHUTDOWN
TJ(SD) Thermal shutdown threshold Temperature rising 170 °C
TJ(HYS) Thermal shutdown hysteresis 20 °C