ZHCSI15L June   2006  – May 2018 TPS65023 , TPS65023B

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Electrical Characteristics: Supply Pins VCC, VINDCDC1, VINDCDC2, VINDCDC3
    7. 6.7  Electrical Characteristics: Supply Pins VBACKUP, VSYSIN, VRTC, VINLDO
    8. 6.8  Electrical Characteristics: VDCDC1 Step-Down Converter
    9. 6.9  Electrical Characteristics: VDCDC2 Step-Down Converter
    10. 6.10 Electrical Characteristics: VDCDC3 Step-Down Converter
    11. 6.11 I2C Timing Requirements for TPS65023B
    12. 6.12 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VRTC Output and Operation With or Without Backup Battery
      2. 7.3.2  Step-Down Converters, VDCDC1, VDCDC2, and VDCDC3
      3. 7.3.3  Power Save Mode Operation
      4. 7.3.4  Low Ripple Mode
      5. 7.3.5  Soft-Start
      6. 7.3.6  100% Duty Cycle Low Dropout Operation
      7. 7.3.7  Active Discharge When Disabled
      8. 7.3.8  Power-Good Monitoring
      9. 7.3.9  Low-Dropout Voltage Regulators
      10. 7.3.10 Undervoltage Lockout
      11. 7.3.11 Power-Up Sequencing
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 System Reset + Control Signals
        1. 7.5.1.1 DEFLDO1 and DEFLDO2
        2. 7.5.1.2 Interrupt Management and the INT Pin
      2. 7.5.2 Serial Interface
    6. 7.6 Register Maps
      1. 7.6.1 VERSION Register Address: 00h (Read Only)
      2. 7.6.2 PGOODZ Register Address: 01h (Read Only)
      3. 7.6.3 MASK Register Address: 02h (Read and Write), Default Value: C0h
      4. 7.6.4 REG_CTRL Register Address: 03h (Read and Write), Default Value: FFh
      5. 7.6.5 CON_CTRL Register Address: 04h (Read and Write), Default Value: B1h
      6. 7.6.6 CON_CTRL2 Register Address: 05h (Read and Write), Default Value: 40h
      7. 7.6.7 DEFCORE Register Address: 06h (Read and Write), Default Value: 14h/1Eh
      8. 7.6.8 DEFSLEW Register Address: 07h (Read and Write), Default Value: 06h
      9. 7.6.9 LDO_CTRL Register Address: 08h (Read and Write), Default Value: Set with DEFLDO1 and DEFLDO2
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input Voltage Connection
      2. 8.1.2 Unused Regulators
      3. 8.1.3 Reset Condition of DCDC1
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection for the DC-DC Converters
        2. 8.2.2.2 Output Capacitor Selection
        3. 8.2.2.3 Input Capacitor Selection
        4. 8.2.2.4 Output Voltage Selection
        5. 8.2.2.5 VRTC Output
        6. 8.2.2.6 LDO1 and LDO2
        7. 8.2.2.7 TRESPWRON
        8. 8.2.2.8 VCC Filter
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Requirements for Supply Voltages Below 3.0 V
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 11.1.2 开发支持
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 相关链接
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RSB|40
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.9 Electrical Characteristics: VDCDC2 Step-Down Converter

VINDCDC1 = VINDCDC2 = VINDCDC3 = VCC = VINLDO = 3.6 V, VBACKUP = 3 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VI Input voltage range, VINDCDC2 2.5 6 V
IO Maximum output current DEFDCDC2 = GND 1200 mA
VINDCDC2 = 3.6 V;
3.3 V - 1% ≤ VDCDC2  ≤ 3.3V + 1%		 1000
I(SD) Shutdown supply current in VINDCDC2 DCDC2_EN = GND 0.1 1 μA
rDS(on) P-channel MOSFET on-resistance VINDCDC2 = V(GS) = 3.6 V 140 300 mΩ
Ilkg P-channel leakage current VINDCDC2 = 6 V 2 μA
rDS(on) N-channel MOSFET on-resistance VINDCDC2 = V(GS) = 3.6 V 150 297 mΩ
Ilkg N-channel leakage current V(DS) = 6 V 7 10 μA
ILIMF Forward current limit (P-channel and N-channel) 2.5 V < VINDCDC2 < 6 V 1.74 1.94 2.12 A
fS Oscillator frequency 1.95 2.25 2.55 MHz
Fixed output voltage FPWMDCDC2=0 VDCDC2 = 1.8 V VINDCDC2 = 2.5 V to 6 V;
0 mA ≤ IO  ≤ 1.2 A		 –2% 2%
VDCDC2 = 3.3 V VINDCDC2 = 3.7 V to 6 V;
0 mA ≤ IO  ≤ 1.2 A		 –1% 1%
Fixed output voltage FPWMDCDC2=1 VDCDC2 = 1.8 V VINDCDC2 = 2.5 V to 6 V;
0 mA ≤ IO  ≤ 1.2 A		 –2% 2%
VDCDC2 = 3.3 V VINDCDC2 = 3.7 V to 6 V;
0 mA ≤ IO  ≤ 1.2 A		 –1% 1%
Adjustable output voltage with resistor divider at DEFDCDC2 FPWMDCDC2=0 VINDCDC2 = VDCDC2 + 0.3 V (min 2.5 V) to 6 V; 0 mA ≤ IO  ≤ 1 A –2% 2%
Adjustable output voltage with resistor divider at DEFDCDC2; FPWMDCDC2=1 VINDCDC2 = VDCDC2 + 0.3 V (min 2.5 V) to 6 V; 0 mA ≤ IO  ≤ 1 A –1% 1%
Line Regulation VINDCDC2 = VDCDC2 + 0.3 V (min. 2.5 V) to 6 V; IO = 10 mA 0% V
Load Regulation IO = 10 mA to 1000 mA 0.25% A
tStart Start-up time Time from active EN to start switching 145 175 200 µs
tRamp VOUT ramp-up time Time to ramp from 5% to 95% of VOUT 400 750 1000 μs
Internal resistance from L2 to GND 1 MΩ
VDCDC2 discharge resistance DCDC2 discharge =1 300 Ω
(1) Typical values are at TA = 25°C, unless otherwise noted.
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