ZHCSI17B December   2008  – May 2018 TPS650250

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     详细方框图
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Dissipation Ratings
    6. 6.6  Electrical Characteristics
    7. 6.7  Electrical Characteristics VDCDC1
    8. 6.8  Electrical Characteristics VDCDC2
    9. 6.9  Electrical Characteristics VDCDC3
    10. 6.10 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Step-Down Converters, VDCDC1, VDCDC2 AND VDCDC3
      2. 7.3.2 Power Save Mode Operation
      3. 7.3.3 Soft Start
      4. 7.3.4 100% Duty Cycle Low Dropout Operation
      5. 7.3.5 Low Dropout Voltage Regulators
      6. 7.3.6 Undervoltage Lockout
      7. 7.3.7 PWRFAIL
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Configuration For The Samsung Processor S3C6400-533MHz
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Inductor Selection for the DCDC Converters
        2. 8.2.3.2 Output Capacitor Selection
        3. 8.2.3.3 Input Capacitor Selection
        4. 8.2.3.4 Output Voltage Selection
        5. 8.2.3.5 Voltage Change on VDCDC3
        6. 8.2.3.6 Vdd_alive Output
        7. 8.2.3.7 LDO1 and LDO2
        8. 8.2.3.8 Vcc-Filter
      4. 8.2.4 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 11.1.2 开发支持
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Layout Guidelines

  • The VINDCDC1, VINDCDC2 and VINDCDC3 terminals should be bypassed to ground with a low ESR ceramic bypass capacitor. The typical recommended bypass capacitance is 10 uF ceramic with a X5R or X7R dielectric.
  • The VINLDO terminal should be bypassed to ground with a low ESR ceramic bypass capacitor. The typical recommended bypass capacitance is 1 uF ceramic with a X5R or X7R dielectric.
  • The optimum placement is closest to the individual voltage terminals and the AGNDx terminals.
  • The AGNDx terminals should be tied to the pcb ground plane at the terminal of the IC.
  • The cross sectional area loop from the input capacitor to the VINDCDCx input and corresponding PGNDx terminal should be minimized as much as possible.
  • Route the feedback signal for each of the step-down converters next to the current path of the converter in order to decrease the cross sectional area of the feedback loop which minimizes noise injection into the loop.
  • Do not route any noise sensitive signals under or next to any of the step-down inductors. Ensure a keepout region directly under the inductors or at least provide ground shielding.
  • It is recommended to have the layer directly underneath the IC to be a solid copper ground plane.