ZHCSG44F June 2017 – October 2024 TPS650864
PRODUCTION DATA
The TPS6508640 device is optimized to power the higher range of the Xilinx Zynq Ultrascale+ MPSoC, but is compatible with the lower range as well. See Figure 7-3 for an example block diagram. Dashed lines show the option to short VCCINT with VCCBRAM for cases where their voltages are the same and current < 25 A. In this case, the TPS544C25 device is not needed and GPO1 should be shorted to CTL4.
The power up and power down sequences can be seen in Figure 7-4 and Figure 7-5. Regulators and GPOs are enabled by combination of CTL pins and regulator power good signals.
TPS6508640 sequence includes an optional slot for an external rail to power VCCINT. When using an external rail, GPO1 should be connected to the enable of the external rail and the power good of the external rail should be connected to CTL4. When merging VCCINT and VCCBRAM, GPO1 can be connected directly to CTL4.
CTL1 and CTL5 are used to enable the portion of the sequencing related to DDR memory. This includes BUCK6, LDOA1, and VTT LDO. Connecting the CTL1 pin to the same input as CTL3 will result in BUCK6 being enabled 2 ms after BUCK5 and LDOA1 being enabled after BUCK6 PG. If CTL5 is connected to the same input as well, VTT LDO will turn on after BUCK6 PG as well.
CTL2 is used to select DDR voltage between 1.2 V (logic level low) and 1.35 V (logic level high).
CTL6 is used to select BUCK2 (VCCBRAM) voltage between 0.85 V (logic level low) and 0.9 V (logic level high). BUCK3 also has SLP_EN = 1b by default, so if using 0.85 V for VCCBRAM (CTL6 logic level low), then to modify BUCK3 VID during operation, BUCK3_SLP_VID register bits should be used.
LDOA2 and LDOA3 are controlled only by I2C.
A summary of the part number specific settings can be seen in Section 7.3.1.