ZHCSFJ2E September 2015 – October 2024 TPS65094
PRODUCTION DATA
This controller is designed to drive two NMOS FETs. Typically, lower RDSON values are better for improving the overall efficiency of the controller. However, higher gate-charge thresholds result in lower efficiency, so the two must be balanced for optimal performance. As the RDSON for the low-side FET decreases, the minimum current limit increases; therefore, ensure selection of the appropriate values for the FETs, inductor, output capacitors, and current-limit resistor. TI's CSD87331Q3D, CSD87381P, and CSD87588N devices are recommended for the controllers, depending on the required maximum current.