ZHCSEC5D November   2015  – May 2021 TPS65235

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Boost Converter
      2. 7.3.2  Linear Regulator and Current Limit
      3. 7.3.3  Boost Converter Current Limit
      4. 7.3.4  Charge Pump
      5. 7.3.5  Slew Rate Control
      6. 7.3.6  Short Circuit Protection, Hiccup and Overtemperature Protection
      7. 7.3.7  Tone Generation
      8. 7.3.8  Tone Detection
      9. 7.3.9  Disable and Enable
      10. 7.3.10 Component Selection
        1. 7.3.10.1 Boost Inductor
        2. 7.3.10.2 Capacitor Selection
        3. 7.3.10.3 Surge Components
        4. 7.3.10.4 Consideration for Boost Filtering and LNB Noise
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 Serial Interface Description
      2. 7.5.2 TPS65235 I2C Update Sequence
    6. 7.6 Register Maps
      1. 7.6.1 Control Register 1 (address = 0x00H) [reset = 00010000]
      2. 7.6.2 Control Register 2 (address = 0x01H) [reset = 0000101]
      3. 7.6.3 Status Register (address = 0x02H) [reset = x0100000]
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application for DiSEqc1.x Support
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
      4. 8.2.4 Typical Application for DiSEqc2.x Support
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
        3. 8.2.4.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
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订购信息

Detailed Design Procedure

To begin the design process, following need to be done:

  • Inductor choose
    • Based on the cost requirement, ripple requirement and Section 7.3.10 to choose the appropriate inductor.
  • Boost capacitor choose
    • Based on the cost requirement, ripple requirement and Section 7.3.10 to choose the appropriate capacitors.
  • Diodes choose.
    • D0 and D2 are for the surge protection requirement, if not requirement for surge, it can be removed. Refer to Section 7.3.10.3 for the part selection.
    • D1 is for the boost loop, schottky diode is recommended. The current and voltage capability of the D1 can be determined by the detail application which including input and output power range, and current requirement.
    • D3 is for the VLNB output protection, schottky diode is recommended. The current and voltage capability of the D3 can be determined by the detail application for the output.