ZHCSL05C October 2019 – October 2023 TPS65313-Q1
PRODUCTION DATA
POS | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|---|
5.0 | VSUP_BOOST_NOM | BOOST supply
voltage |
3.3 | V | |||
5.0 | VSUP_BOOST_NOM | BOOST supply voltage | 3.6 | V | |||
5.0a | VSUP_BOOST | BOOST supply
voltage range, in percentage of VSUP_BOOST_NOM |
94 | 106 | % | ||
5.1 | VBOOST | Boost output voltage | 5 | V | |||
5.2 | fSW_BOOST | BOOST switching frequency | 2.0 | 2.2 | 2.4 | MHz | |
5.3 | VBOOST_DC_ACCURACY | BOOST DC output voltage accuracy | IBOOST_LOAD = 0 A to max(IBOOST_LOAD),
measured at VSENSE3 pin(3) |
-1.5 | 1.5 | % | |
5.4a | VBOOST_RIPPLE | BOOST output peak voltage ripple (0.5 × VPP), in percentage of target regulation voltage | IBOOST_LOAD = max(IBOOST_LOAD)(3) |
0.3 | % | ||
5.4b | VBOOST_SSM_RIPPLE | BOOST output peak voltage ripple (0.5 × VPP), in percentage of target regulation voltage, when fSW clock modulation is enabled | IBOOST_LOAD = max(IBOOST_LOAD)(3) |
0.3 | % | ||
5.5 | VBOOST_LOAD_TRAN | Load transient regulation, in percentage of steady-state regulation voltage | IBOOST_LOAD load step #1
|
-3 | 3 | % | |
5.6 | tSETTLE_BOOST | Load transient recovery time to 1% below starting point or 1% above starting point. | 20 | µs | |||
5.7 | RDS_ON_HS_BOOST | ON resistance of high-side switch FET | VGS=4.5V, IDS = 1.0A | 110 | 140 | mΩ | |
5.8 | RDS_ON_LS_BOOST | ON resistance of low-side switch FET | VGS=4.5V, IDS = 1.0A | 210 | 350 | mΩ | |
5.10a | RDISCH_BOOST | BOOST internal discharge resistance when the device is in powered states | 100 | 200 | 400 | Ω | |
5.10b | RDISCH_BOOST_OFF | BOOST internal discharge resistance when device is in OFF state | 800 | Ω | |||
5.11 | tSS_BOOST | BOOST internal soft-start duration | Measured from
BOOT enable event to VBOOST crossing its UV threshold. COUT = 100 µF |
2 | ms | ||
5.14a | IBOOST_LOAD | BOOST load current(2) | 600 | mA | |||
5.15 | ILS_LIMIT_BOOST | Low-side switch source current limit (weak/short current limit) | 1.9 | 2.3 | 2.7 | A | |
5.16 | IHS_LIMIT_BOOST | High-side switch source current limit | 1 | 1.4 | 1.8 | A | |
5.17 | ICL_HS_SINK_BOOST | Internal high-side switch sink current limit | -1.30 | -0.75 | A | ||
5.20 | IVSUP_BOOST_NO_LOAD | BOOST no-load supply current | IBOOST_LOAD = 0 A | 7 | 8 | mA | |
5.21 | VBOOST_START_UP | VBOOST start-up time | Measured from WAKE event to VBOOST ramps above its UV threshold level | 4 | 8 | ms | |
5.22 | ΔVBOOST_LINEREG_DC | Output voltage
line regulation NOTE: DC line regulation as output voltage change in % ( ∆VBOOST / VBOOST ) as VSUP_BOOST changes from MIN to MAX |
0.97 × VSUP_BOOST_NOM ≤ VSUP_BOOST ≤ 1.03 × VSUP_BOOST_NOM, IBOOST_LOAD = 0.3 A | 0.1 | 0.2 | % | |
5.23 | ΔVBOOST_LOADREG_DC | Output voltage
load regulation NOTE: DC load regulation as output voltage change in % ( ∆VBOOST / VBOOST ) as IBOOST_LOAD changes from MIN to MAX |
IBOOST_LOAD = 0 A to max(IBOOST_LOAD) | 0.2 | % | ||
5.24 | VBOOST_RESTART_LEVEL | BOOST output voltage level before ramp-up starts, in percentage of target regulation voltage | NOTE: when there is a BOOST shutdown event followed by new start-up event, the device cannot start-up again until BOOST discharges below this level | 88 | % |