2 修订历史记录
Changes from F Revision (January 2018) to G Revision
- Updated the LDOVRTC_OUT pulldown resistor recommendation to only include applicable silicon revisions. Go
- Changed ESD Ratings for charge device model on 6 pins Go
- Clarified that LDO1 and LDO2 input pins are not included in this minimum recommended operating voltage. See Electrical Characteristics: LDO Regulators for more information. Go
- Changed minimum recommended operating condition of OSC16MIN from 0V to -0.7V Go
- Added LDO and SMPS output capacitance footnote Go
- Changed VSYS_LO hysteresis from 95mV to 75mV Go
- Updated Caution statement to only include applicable silicon revisions. Go
- Changed discharge resistance to match electrical characteristics table Go
- Added information about shutdown timing during short circuit detection Go
- Updated POWERGOOD description to clarify multi-phase operation. Go
- Updated LDOVRTC note to only include applicable silicon revisions. Go
- Added details on identifying device version. Go
- Added typical debounce time from POWERHOLD to the enable of the first rail in the power sequence. Go
- Added VSYS_LO note for applicable silicon revisions. Go
- Updated POR requirements to only include applicable silicon revisions. Go
- SMPS and LDO output capacitance specification further explained Go
- Added design considerations for VCC1 capacitance to support loss of powerGo
- Corrected 9-Vpp with 7V absolute maximum specification in the Layout Guidelines sectionGo
- Updated requirements relating to measurement of high-side and low-side FETs in the Layout Guidelines sectionGo
- Updated images and description on differential measurements across high-side and low-side FETs Go
Changes from E Revision (July 2017) to F Revision
- Deleted pullup and pulldown from BOOT0 pin description Go
- Deleted the voltage mode to the I/O digital supply voltage, VIO_IN parameter from the Recommended Operating Conditions tableGo
- Added 2-A mode for SMPS6 in the test conditions for high-side and low-side MOSFET forward current limit and low-side MOSFET negative current limit in the Electrical Characteristics: Stand-Alone Regulators (SMPS3, SMPS6, SMPS7, SMPS8, and SMPS9) tableGo
- Added the number of active SMPS phases (K) to the equation for the temperature compensated result in the Current Monitoring and Short Circuit Detection sectionGo
- Added additional description of SMPS short detection and recovery behavior Go
- Added equation to convert GPADC code to internal die temperatureGo
- Added description of VIO power-up timing, and updated start up timing diagramGo
- Added additional description of VSYS_LO functionalityGo
- Changed 静电放电注意事项 声明Go
Changes from D Revision (April 2016) to E Revision
- Deleted CLK32KGO from the Startup Timing DiagramGo
- Added OTP note to the Application SchematicGo
- Changed the VIO_GND connection to C6 in the Typical Application SchematicGo
- Updated part numbers and settings for released devices in the Design Parameters table Go
- Added 接收文档更新通知 部分Go
Changes from C Revision (November 2015) to D Revision
- Changed the LDOVRTC_OUT pin description in the Pin Functions table Go
- Changed the typical value for the channel 11 SMPS output current measurement gain factor parameter in the 12-Bit Sigma-Delta ADC Characteristics tableGo
- Changed the typical value for the channel 11 SMPS output current measurement current offset parameter in the 12-Bit Sigma-Delta ADC Characteristics tableGo
- Added maximum current of LDOVRTC in BACKUP and OFF statesGo
- Added a note to the LDOVRTC section Go
- Added additional description of POR in System Voltage Monitoring sectionGo
- Updated part numbers and settings for released devices in the Design Parameters table Go
Changes from B Revision (November 2015) to C Revision
- Added statement to the Current Monitoring and Short Circuit Detection section that the SMPS_SHORT_REGISTER bit will keep a resource off until it is clearedGo
Changes from A Revision (September 2015) to B Revision
- Changed 将器件状态从预告信息 更改成了量产数据Go
Changes from * Revision (December 2014) to A Revision