ZHCSKK3B December 2019 – February 2022 TPS6594-Q1
PRODUCTION DATA
POS | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|---|
Electrical Characteristics | |||||||
9.1 | VPOR_Falling | VCCA UVLO/POR falling threshold | Measured on VCCA pin | 2.7 | 2.75 | 2.8 | V |
9.2 | VPOR_Rising | VCCA UVLO/POR rising threshold | Measured on VCCA pin | 2.7 | 3 | V | |
9.3 | VPOR_Hyst | VCCA UVLO/POR hysteresis | 100 | mV | |||
9.5aa | VVCCA_OVP_Rising | VCCA OVP rising threshold | Measured on VCCA pin. VCCA_PG_SET = 0b | 3.9 | 4.0 | 4.1 | V |
9.5ab | Measured on VCCA pin. VCCA_PG_SET = 1b | 5.6 | 5.7 | 5.8 | V | ||
9.5b | VVCCA_OVP_Hyst | VCCA OVP hysteresis | 50 | mV | |||
9.7 | VVSYS_OVP_Rising | VSYS OVP rising threshold | Measured on VSYS_SENSE pin, untrimmed | 5.6 | 5.9 | 6.2 | V |
9.8 | VVSYS_OVP_Rising_Trim | VSYS OVP rising threshold, trimmed | Measured on VSYS_SENSE pin, trimmed | 5.8 | 5.9 | 6 | V |
9.9 | VOVPGDRV_OFF | Output voltage at OVPGDRV pin when external FET is switched off | Measured after OVPGDRV pin has reached steady state voltage | 0.4 | V | ||
9.10 | VOVPGDRV_On | Output voltage at OVPGDRV pin when external FET is switched on | Measured after OVPGDRV pin has reached steady state voltage | 12 | V | ||
9.11 | Ciss_extFET | Gate capacitance of external NMOS FET | External NMOS FET: VDS = 12V, VGS = 0V | 4 | nF | ||
9.12 | VOVPGDRV_OV_TH | Over-voltage threshold level at OVPGDRV pin when external FET is switched on | 12.5 | V | |||
9.13 | RVCCA_OVP_PD | Active pull down resistance between VCCA and GND in case of VSYS OVP detection | 50 | 100 | 140 | Ω | |
9.14 | VVSYS_SR | Input slew rate of VSYS supply | Measured at VSYS_SENSE pin as voltage rises from 0V to VPOR_Rising | 30 | mV/µs | ||
9.15 | VVCCA_PVIN_SR | Input slew rate of VCCA and PVIN_x supplies | Measured at VCCA and PVIN_x pins as voltage rises from 0V to VPOR_Rising | 60 | mV/µs | ||
9.16 | VVIO_SR | Input slew rate of VIO supply | Measured at VIO pin as voltage rises from 0V to VPOR_Rising | 60 | mV/µs | ||
9.17 | VVBACKUP_SR | Input slew rate of VBACKUP supply | Measured at VBACKUP pin | 60 | mV/µs | ||
9.18 | VVSYS_RC_TH | VSYS reset recovery threshold | Measured on VSYS_SENSE pin | 50 | mV | ||
9.19 | VVSYS_UVLO Rising_TH | VSYS UVLO recovery threshold | Measured on VSYS_SENSE pin | 2.4 | 2.7 | V | |
9.20 | VOVP_FET_Short_TH | VSYS OVP FET-fail short test threshold | Measured on VCCA pin | 0.3 | 0.42 | V | |
9.21 | VOVP_FET_Short_Hyst | VSYS OVP FET fail-short test hysteresis | Measured on VCCA pin | 30 | 60 | mV | |
Timing Requirements | |||||||
26.1 | tVSYS_RC_TH | VSYS reset recovery time | Minimum time VSYS_SENSE stays below VVSYS_RC_TH before device recovers from VSYS power cycle | 5 | ms | ||
26.20 | tVSYSOVP_INIT | Startup time for OVPGDRV output | Total startup time for OVPDGRV to rise from 0V to VVSYS_SENSE, including OVP circuit startup, FET fault detection, and OVPGDRV ramp time. 200 µF capacitance at VCCA | 6 | 20 | ms | |
26.2 | tlatency_VSYSOVP | OVPGDRV latency from VSYS OVP detection | Voltage at VSYS_SENSE pin rises from 6 V to 8 V in 7 µs. Measured from the time VSYS_SENSE = 6 V to the time OVPGDRV = VCCA | 15 | µs | ||
26.3a | tlatency_VCCAOVP | OVPGDRV latency from VCCA OVP detection | VCCA_PG_SEL = 0b. Voltage at VSYS_SENSE pin rises from 4 V to 8 V in 7 µs. Measured from the time VCCA = VVCCA_OVP_Rising to the time OVPGDRV = VCCA | 10 | µs | ||
26.3b | VCCA_PG_SEL = 1b. Voltage at VSYS_SENSE pin rises from 6 V to 8 V in 7 µs. Measured from the time VCCA = VVCCA_OVP_Rising to the time OVPGDRV = VCCA | 10 | µs | ||||
26.4 | tlatency_VCCAUVLO | VCCA_UVLO signal latency from detection | Measured time between VVCCA falling from 3.3 V to 2.7 V with ≤ 100mv/µs slope, to the detection of VCCA_UVLO signal | 10 | µs | ||
26.5 | tlatency_VINT | LDOVINT OVP and UVLO signal latency from detection | With 25-mV overdrive |
12 | µs | ||
26.14 | tABISTrun | Run time for ABIST | 0.25 | ms | |||
26.15 | tLBISTrun | Run time for LBIST | 1.8 | ms | |||
26.16 | tINIT_NVM_ANALOG | Device initialization time to load default values for NVM registers, and start-up analog circuits | 2 | ms | |||
26.17 | tINIT_REF_CLK_LDO | Device initialization time for reference bandgaps, system clock, and internal LDOs | 1 | ms |