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ZHCSDI0A October 2014 – March 2015 TPS706

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DRV|6
- MPDS216E
DBV|5
- MPDS018T

散热焊盘机械数据 (封装 | 引脚)

DRV|6
- QFND087M

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

specified at T_J = –40°C to 125°C, unless otherwise noted; all voltages are with respect to GND⁽¹⁾

		MIN	MAX	UNIT
Voltage	V_IN	–0.3	7	V
	V_EN	–0.3	7	V
	V_OUT	–0.3	7	V
Maximum output current	I_OUT	Internally limited
Output short-circuit duration		Indefinite
Continuous total power dissipation	P_DISS	See Thermal Information
Junction temperature, T_J		–55	150	°C
Storage temperature, T_stg		–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 2-kV HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 500-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_IN	Input voltage	2.7		6.5	V
V_OUT	Output voltage	1.2		5	V
I_OUT	Output current	0		150	mA
V_EN	Enable voltage	0		6.5	V
C_IN	Input capacitor	0	1		µF
C_OUT	Output capacitor	2	2.2	47	µF
T_J	Operating junction temperature	–40		125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS706		UNIT
		DBV	DRV
		5 PINS	6 PINS
R_θJA	Junction-to-ambient thermal resistance	212.1	73.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	78.5	97.0
R_θJB	Junction-to-board thermal resistance	39.5	42.6
ψ_JT	Junction-to-top characterization parameter	2.86	2.9
ψ_JB	Junction-to-board characterization parameter	38.7	42.9
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	12.8

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At T_J = –40°C to 125°C, V_IN = V_OUT(nom) + 1 V or 2.7 V (whichever is greater), I_OUT = 1 mA, V_EN = 2 V, and C_IN = C_OUT = 2.2-μF ceramic, unless otherwise noted. Typical values are at T_J = 25°C.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_IN	Input voltage range		2.7		6.5	V
V_OUT	Output voltage range		1.2		5.0	V
V_{OUT(accuracy)}	DC output accuracy	V_OUT < 3.3 V	–2%		2%
V_{OUT(accuracy)}	DC output accuracy	V_OUT ≥ 3.3 V, T_J = –40°C to 85°C	–1%		1%
ΔV_OUT	Line regulation	(V_OUT(nom) + 1 V, 2.7 V) ≤ V_IN ≤ 6.5 V		3	10	mV
ΔV_OUT	Load regulation	V_IN = V_OUT(nom) + 1.5 V or 3 V (whichever is greater), 100 µA ≤ I_OUT ≤ 150 mA		20	50	mV
V_DO	Dropout voltage⁽¹⁾⁽³⁾	2.8 V ≤ V_OUT ≤ 3.3 V, I_OUT = 50 mA		295	650	mV
V_DO	Dropout voltage⁽¹⁾⁽³⁾	2.8 V ≤ V_OUT ≤ 3.3 V, I_OUT = 150 mA		975	1540	mV
I_(CL)	Output current limit⁽⁴⁾	V_OUT = 0.9 × V_OUT(nom)	200	320	500	mA
I_GND	Ground pin current	I_OUT = 0 mA, V_OUT ≤ 3.3 V		1.3	2.55	µA
I_GND	Ground pin current	I_OUT = 150 mA		350		µA
I_SHDN	Shutdown current	V_EN ≤ 0.4 V, V_IN = 2.7 V		150		nA
PSRR	Power-supply rejection ratio	f = 10 Hz		80		dB
		f = 100 Hz		62		dB
		f = 1 kHz		52		dB
V_n	Output noise voltage	BW = 10 Hz to 100 kHz, I_OUT = 10 mA, V_IN = 2.7 V, V_OUT = 1.2 V		190		μV_RMS
V_EN(HI)	Enable pin high (enabled)		0.9			V
V_EN(HI)	Enable pin high (disabled)		0		0.4	V
I_EN	EN pin current	EN = 1.0 V, V_IN = 5.5 V		300		nA
I_REV	Reverse current (flowing out of IN pin)	V_OUT = 3 V, V_IN = V_EN = 0 V		10		nA
I_REV	Reverse current (flowing into OUT pin)	V_OUT = 3 V, V_IN = V_EN = 0 V		100		nA
T_SD	Thermal shutdown temperature	Shutdown, temperature increasing		158		°C
T_SD	Thermal shutdown temperature	Reset, temperature decreasing		140		°C
T_J	Operating junction temperature		–40		125	°C

(1) V_DO is measured with V_IN = 0.98 × V_OUT(nom).

(2) Startup time = time from EN assertion to 0.95 × V_OUT(nom) and load = 47 Ω.

(3) Dropout is only valid when V_OUT ≥ 2.8 V because of the minimum input voltage limits.

(4) Measured with V_IN = V_OUT + 3 V for V_OUT ≤ 2.5 V. Measured with V_IN = V_OUT + 2.5 V for V_OUT > 2.5 V.

6.6 Timing Requirements

At T_J = –40°C to 125°C, V_IN = V_OUT(nom) + 1 V or 2.7 V (whichever is greater), R_L = 47 Ω, V_EN = 2 V, and C_IN = C_OUT = 2.2-μF ceramic, unless otherwise noted. Typical values are at T_J = 25°C.

PARAMETER			MIN	TYP	MAX	UNIT
t_STR	Start-up time⁽²⁾	V_OUT(nom) ≤ 3.3 V		200	600	µs
t_STR	Start-up time⁽²⁾	V_OUT > 3.3 V		500	1500	µs

6.7 Typical Characteristics

Over operating temperature range (T_J = –40°C to 125°C), I_OUT = 10 mA, V_EN = 2 V, C_OUT = 2.2 μF, and V_IN = V_OUT(nom) + 1 V or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at T_J = 25°C.

TPS70612

Figure 1. 1.2-V Line Regulation vs V_IN and Temperature

TPS70612

Figure 3. 1.2-V Load Regulation vs I_OUT and Temperature

TPS70612

Figure 5. V_OUT vs Temperature

TPS70633

Figure 7. 3.3-V Current Limit vs V_IN and Temperature

TPS70633, EN = open

Figure 9. GND Current vs V_IN and Temperature

Shutdown current, TPS70612

Figure 11. Shutdown Current vs V_IN and Temperature

V_OUT = 2.8 V

Figure 13. Noise

Channel 2 = V_OUT, channel 4 = I_OUT, V_IN = 2.7 V

Figure 15. TPS70612 Load Transient (0 mA to 50 mA)

Channel 2 = V_OUT, channel 4 = I_OUT, V_IN = 2.7 V

Figure 17. TPS70612 Load Transient (50 mA to 0 mA)

Channel 2 = V_OUT, channel 4 = I_OUT, V_IN = 4.3 V

Figure 19. TPS70633 Load Transient (0 mA to 50 mA)

Channel 2 = V_OUT, channel 4 = I_OUT, V_IN = 4.3 V

Figure 21. TPS70633 Load Transient (50 mA to 0 mA)

Channel 2 = V_OUT, channel 4 = V_IN, I_OUT = 10 mA

Figure 23. TPS70612 Line Transient (2.7 V to 3.7 V)

Channel 2 = V_OUT, channel 4 = V_IN, I_OUT = 10 mA

Figure 25. TPS70633 Line Transient (4.3 V to 5.3 V)

Channel 1 = EN, channel 2 = V_OUT, V_IN = 4.3 V, C_OUT = 2.2 µF, TPS70633

Figure 27. Power-Up with Enable

Channel 1 = V_IN, channel 2 = V_OUT, I_OUT = 150 mA, TPS70633

Figure 29. Power-Up and Power-Down Response

TPS70633

Figure 2. 3.3-V Line Regulation vs V_IN and Temperature

TPS70633

Figure 4. 3.3-V Load Regulation vs I_OUT and Temperature

TPS70612

Figure 6. 1.2-V Current Limit vs V_IN and Temperature

TPS70612

Figure 8. GND Current vs V_IN and Temperature

TPS70612

Figure 10. GND Current vs I_OUT and Temperature

V_OUT = 2.8 V, V_IN = 3.8 V, C_OUT = 2.2 µF

Figure 12. Power-Supply Rejection Ratio vs Frequency

TPS70612

Figure 14. Start-Up Time vs Temperature

Channel 2 = V_OUT, channel 4 = I_OUT, V_IN = 2.7 V

Figure 16. TPS70612 Load Transient (1 mA to 150 mA)

Channel 2 = V_OUT, channel 4 = I_OUT, V_IN = 2.7 V

Figure 18. TPS70612 Load Transient (50 mA to 150 mA)

Channel 2 = V_OUT, channel 4 = I_OUT, V_IN = 4.3 V

Figure 20. TPS70633 Load Transient (1 mA to 150 mA)

Channel 2 = V_OUT, channel 4 = I_OUT, V_IN = 4.3 V

Figure 22. TPS70633 Load Transient (50 mA to 150 mA)

Channel 2 = V_OUT, channel 4 = V_IN, I_OUT = 50 mA

Figure 24. TPS70612 Line Transient (2.7 V to 3.7 V)

Channel 2 = V_OUT, channel 4 = V_IN, I_OUT = 50 mA

Figure 26. TPS70633 Line Transient (4.3 V to 5.3 V)

Channel 1 = V_IN, channel 2 = V_OUT, I_OUT = 3 mA, TPS70633

Figure 28. Power-Up and Power-Down Response