ZHCSPJ3T May   2001  – December 2022 TPS715

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4.     Thermal Information
    5. 6.4 Electrical Characteristics
    6. 6.5 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Wide Supply Range
      2. 7.3.2 Low Quiescent Current
      3. 7.3.3 Dropout Voltage (VDO)
      4. 7.3.4 Current Limit
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Detailed Design Procedure
        1. 8.2.1.1 Setting VOUT for the TPS71501 Adjustable LDO
        2. 8.2.1.2 External Capacitor Requirements
        3. 8.2.1.3 Input and Output Capacitor Requirements
        4. 8.2.1.4 Reverse Current
        5. 8.2.1.5 Feed-Forward Capacitor (CFF)
        6. 8.2.1.6 Power Dissipation (PD)
        7. 8.2.1.7 Estimating Junction Temperature
      2. 8.2.2 Application Curves
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
        1. 8.5.1.1 Power Dissipation
      2. 8.5.2 Layout Example
  9. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Evaluation Module
        2. 9.1.1.2 Spice Models
      2. 9.1.2 Device Nomenclature
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 接收文档更新通知
    4. 9.4 支持资源
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 术语表
  10. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
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订购信息

Typical Characteristics

at operating temperature TJ = 25°C, VIN = VOUT(NOM) + 1.0 V or 2.5 V (whichever is greater), IOUT = 1mA, CIN = 1 µF, and COUT = 1 µF (unless otherwise noted)

GUID-07E5819B-CB89-4989-8B4D-69EF667A87F9-low.gif
 
 
Figure 6-1 Output Voltage vs Output Current for Legacy Chip
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Figure 6-3 Output Voltage vs Junction Temperature for Legacy Chip
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Figure 6-5 Quiescent Current vs Junction Temperature for Legacy Chip
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Figure 6-7 Output Voltage Spectral Noise Density vs Frequency for Legacy Chip
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Figure 6-9 Dropout Voltage vs Output Current for Legacy Chip
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Figure 6-11 TPS71501 Dropout Voltage vs Input Voltage for Legacy Chip
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Figure 6-13 Dropout Voltage vs Junction Temperature for Legacy Chip
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Figure 6-15 Power-Supply Ripple Rejection vs Frequency for Legacy Chip
 
Figure 6-2 Output Voltage vs Output Current for New Chip
 
Figure 6-4 Output Voltage vs Junction Temperature for New Chip
 
Figure 6-6 Quiescent Current vs Junction Temperature for New Chip
Integrated noise vs ILOAD, VIN = 4.3V, VOUT = 3.3V ,
Figure 6-8 Output Voltage Spectral Noise Density vs Frequency for New Chip
 
Figure 6-10 Dropout Voltage vs Output Current for New Chip
 
Figure 6-12 TPS71501 Dropout Voltage vs Input Voltage for New Chip
 
Figure 6-14 Dropout Voltage vs Junction Temperature for New Chip
 
Figure 6-16 Power-Supply Ripple Rejection vs Frequency for New Chip