SBVS100E June   2008  – September 2015 TPS720

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Internal Current Limit
      2. 7.3.2 Inrush Current Limit
      3. 7.3.3 Shutdown
      4. 7.3.4 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor Requirements
      2. 8.1.2 Output Regulation With IN Pin Floating
      3. 8.1.3 Dropout Voltage
      4. 8.1.4 Transient Response
      5. 8.1.5 Minimum Load
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedures
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
    4. 10.4 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Module
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Mounting

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订购信息

6.5 Electrical Characteristics

Over operating temperature range (TJ = –40°C to 125°C), VBIAS = (VOUT + 1.4 V ) or 2.5 V (whichever is greater); VIN ≥ VOUT + 0.5 V, IOUT = 1 mA, VEN = 1.1 V, COUT = 2.2 μF, unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage 1.1(1) VBIAS or 4.5(2) V
VBIAS Bias voltage 2.5 5.5 V
VOUT(4) Output voltage(3) 0.9 3.6 V
Output accuracy Nominal TJ = 25°C –3 3 mV
Over VBIAS, VIN, IOUT, TJ = –40°C to 125°C VOUT + 1.4 V ≤ VBIAS ≤ 5.5 V,
VOUT + 0.5 V ≤ VIN ≤ 4.5 V,
0 mA ≤ IOUT ≤ 350 mA		 –2% 2%
Over VBIAS, VIN, IOUT, TJ = –40°C to 125°C DRV package only:
VOUT + 1.4 V ≤ VBIAS ≤ 5.5 V,
VOUT + 0.5 V ≤ VIN ≤ 4.5 V,
0 mA ≤ IOUT ≤ 350 mA,
VOUT < 1.2 V		 –25 25 mV
Over VBIAS, VIN, IOUT, TJ = –10°C to 85°C YZU package only:
VOUT + 1.4 V ≤ VBIAS ≤ 5.5 V,
VOUT + 0.5 V ≤ VIN ≤ 4.5 V,
0 mA ≤ IOUT ≤ 350 mA
1.6 V ≤ VOUT ≤ 3.3 V		 –1% 1%
VIN floating VOUT + 1.4 V ≤ VBIAS ≤ 5.5 V,
0 μA ≤ IOUT ≤ 500 μA		 ±1%
ΔVOUT/ΔVIN VIN line regulation VIN = (VOUT + 0.5 V) to 4.5 V, IOUT = 1 mA 16 μV/V
ΔVOUT/ΔVBIAS VBIAS line regulation VBIAS = (VOUT + 1.4 V) or 2.5 V (whichever is greater) to 5.5 V, IOUT = 1 mA 16 μV/V
VIN line transient ΔVIN = 400 mV, tRISE = tFALL = 1 μs ±200 μV
VBIAS line transient ΔVBIAS = 600 mV, tRISE = tFALL = 1 μs ±0.8 mV
ΔVOUT/ΔIOUT Load regulation 0 mA ≤ IOUT ≤ 350 mA (no load to full load) –15 μV/mA
Load transient 0 mA ≤ IOUT ≤ 350 mA, tRISE = tFALL = 1 μs ±15 mV
VDO_IN VIN dropout voltage(5) VIN = VOUT(NOM) – 0.1 V,
(VBIAS – VOUT(NOM)) = 1.4 V,
IOUT = 350 mA		 110 200 mV
VDO_BIAS VBIAS dropout voltage(6) VIN = VOUT(NOM) + 0.3 V, IOUT = 350 mA 1.09 1.4 V
ICL Output current limit VOUT = 0.9 × VOUT(NOM) 420 525 800 mA
IGND Ground pin current IOUT = 100 μA 38 μA
IOUT = 0 mA to 350 mA 54 80
ISHDN Shutdown current (IGND) VEN ≤ 0.4 V, TJ = –40°C to 85°C 0.5 2 μA
PSRR VIN power-supply rejection ratio VIN – VOUT ≥ 0.5 V,
VBIAS = VOUT + 1.4 V,
IOUT = 350 mA		 f = 10 Hz 85 dB
f = 100 Hz 85
f = 1 kHz 85
f = 10 kHz 80
f = 100 kHz 70
f = 1 MHz 50
PSRR VBIAS power-supply rejection ratio VIN – VOUT ≥ 0.5 V,
VBIAS = VOUT + 1.4 V,
IOUT = 350 mA		 f = 10 Hz 80 dB
f = 100 Hz 80
f = 1 kHz 75
f = 10 kHz 65
f = 100 kHz 55
f = 1 MHz 35
VN Output noise voltage BW = 10 Hz to 100 kHz, VBIAS ≥ 2.5 V,
VIN = VOUT + 0.5 V		 48 μVRMS
IVIN_INRUSH Inrush current on VIN VBIAS = (VOUT +1.4 V) or 2.5 V (whichever is greater), VIN = VOUT + 0.5 V 100 + ILOAD mA
tSTR Start-up time VOUT = 95% VOUT(NOM), IOUT = 350 mA,
COUT = 2.2 μF		 140 μs
VEN(HI) Enable pin high (enabled) 1.1 V
VEN(LO) Enable pin low (disabled) 0 0.4 V
IEN Enable pin current VEN = 5.5 V , VIN = 4.5 V, VBIAS = 5.5 V 1 μA
UVLO Undervoltage lockout VBIAS rising 2.41 2.45 2.49 V
Hysteresis VBIAS falling 150 mV
TSD Thermal shutdown temperature Shutdown, temperature increasing 160 °C
Reset, temperature decreasing 140
TJ Operating junction temperature –40 125 °C
(1) Performance specifications are ensured up to a minimum VIN = VOUT + 0.5 V.
(2) Whichever is less.
(3) VO nominal value is factory programmable through the onchip EEPROM.
(4) Minimum VBIAS = (VOUT + 1.4 V) or 2.5 V (whichever is greater) and VIN= VOUT + 0.5 V.
(5) Measured for devices with VOUT(NOM) ≥ 1.2 V.
(6) VBIAS – VOUT with VOUT = VOUT(NOM) – 0.1 V. Measured for devices with VOUT(NOM) ≥ 1.8 V.
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