ZHCSUK3O December 2005 – October 2024 TPS74201
PRODUCTION DATA
The TPS742 family of devices offers industry-leading dropout performance, making this family well-suited for high-current low VIN/low VOUT applications. The extremely low dropout of the TPS742 allows the device to be used in place of a DC-DC converter and still achieve good efficiency. This efficiency allows the user to rethink the power architecture of applications to achieve the smallest, simplest, and lowest cost solution.
There are two different specifications for dropout voltage with the TPS742 devices. The first specification (illustrated in Figure 7-1) is referred to as VIN Dropout, and is for users who wish to apply an external bias voltage to achieve low dropout. This specification assumes that VBIAS is at least 1.62 V above VOUT, which is the case for VBIAS when powered by a 3.3-V rail with 5% tolerance and with VOUT = 1.5 V. If VBIAS is higher than 3.3 V × 0.95 or VOUT is less than 1.5 V, VIN dropout is less than specified.
The second specification (shown in Figure 7-2) is referred to as VBIAS Dropout, and is for users who wish to tie IN and BIAS together. This option allows the device to be used in applications where an auxiliary bias voltage is not available or low dropout is not required. Dropout is limited by BIAS in these applications because VBIAS provides the gate drive to the pass FET and therefore must be 1.4 V above VOUT. Because of this usage, IN and BIAS tied together easily consume huge power. Pay attention not to exceed the power rating of the IC package.