ZHCSN51K June   2007  – June 2024 TPS74901

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics: IOUT = 50mA
    7. 5.7 Typical Characteristics: IOUT = 1 A
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Enable and Shutdown
      2. 6.3.2 Power-Good
      3. 6.3.3 Internal Current Limit
      4. 6.3.4 Thermal Protection
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Input, Output, and BIAS Capacitor Requirements
      2. 7.1.2 Transient Response
      3. 7.1.3 Dropout Voltage
      4. 7.1.4 Output Noise
      5. 7.1.5 Programmable Soft-Start
      6. 7.1.6 Sequencing Requirements
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Power Dissipation
        2. 7.4.1.2 Thermal Considerations
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
      2. 8.1.2 Development Support
        1. 8.1.2.1 Evaluation Modules
        2. 8.1.2.2 Spice Models
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 接收文档更新通知
    4. 8.4 支持资源
    5. 8.5 Trademarks
    6. 8.6 静电放电警告
    7. 8.7 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.5 Electrical Characteristics

at VEN = 1.1 V, VIN = VOUT + 0.3 V, CBIAS = 0.1 μF, CIN = COUT = 10 μF, CNR = 1 nF, IOUT = 50 mA, VBIAS = 5.0 V, and TJ = –40°C to 125°C, (unless otherwise noted); typical values are at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREF Internal reference (Adj.) TA = +25°C  0.798 0.802 0.806 V
VOUT Output voltage range VIN = 5V, IOUT = 3A VREF 3.6 V
VOUT Accuracy (RGW and SON packages)(1) VOUT + 2.2V ≤ VBIAS ≤ 5.5 V, 50mA ≤ IOUT ≤ 3A (Legacy Chip) –2 ±0.5 2 %
VOUT + 2.2V ≤ VBIAS ≤ 5.5V, 50mA ≤ IOUT ≤ 3A (New Chip) –1 ±0.3 1
Accuracy (KTW package)(1) VOUT + 2.4V ≤ VBIAS ≤ 5.5V, 50mA ≤ IOUT ≤ 3A (Legacy Chip Only) –2 ±0.5 2
ΔVOUT(ΔVIN) Line regulation VOUT(nom) + 0.3 ≤ VIN ≤ 5.5V (Legacy Chip) 0.03 %/V
VOUT(nom) + 0.3 ≤ VIN ≤ 5.5V (New Chip) 0.001
ΔVOUT(ΔIOUT) Load regulation 50mA ≤ IOUT ≤ 3A 0.09 %/A
VDO VIN dropout voltage(2) IOUT = 3A, VBIAS – VOUT(nom) ≥ 3.25V(3) (Legacy Chip) 120 280 mV
IOUT = 3A, VBIAS – VOUT(nom) ≥ 3.25V(3) (New Chip) 120 200
VBIAS dropout voltage(2) IOUT = 3A, VIN = VBIAS (Legacy Chip) 1.31 1.75 V
IOUT = 3A, VIN = VBIAS (New Chip) 1.45 1.6
ICL Current limit VOUT = 80% × VOUT(nom), RGW Package 3.9 4.6 5.5 A
VOUT = 80% × VOUT(nom), KTW Package 3.8 4.6 5.5
IBIAS BIAS pin current Legacy Chip 1 2 mA
New Chip 1 1.2
ISHDN Shutdown supply current (IGND) VEN ≤ 0.4V (Legacy Chip) 1 50 µA
ISHDN ( smart enable ) VEN ≤ 0.4V, VIN = VBIAS = 5.5V (New Chip) 0.85 2.75
IFB Feedback pin current Legacy Chip –1 0.15 1 µA
New Chip –30 0.15 30 nA
PSRR Power-supply rejection (VIN to VOUT) 1 kHz, IOUT = 1.5A, VIN = 1.8 V, VOUT = 1.5V 60 dB
300 kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 30
Power-supply rejection (VBIAS to VOUT) 1kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V (Legacy Chip) 50 dB
1kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V (New Chip) 57
300kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V (Legacy Chip) 30
300kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V (New Chip) 49
Vn Output noise voltage BW = 100Hz to 100kHz, IOUT = 3A, CSS = 1nF (Legacy Chip) 25  μVrms x Vout
BW = 100 Hz to 100 kHz, IOUT = 3A, CSS = 1nF (New Chip) 20
tSTR Minimum start-up time RLOAD for IOUT = 1A, CSS = open (Legacy Chip) 200 µs
RLOAD for IOUT = 1A, CSS = open (New Chip) 250
ISS Soft-start charging current VSS = 0.4V (Legacy Chip) 440 nA
VSS = 0.4V (New Chip) 530
VEN(hi) Enable input high level 1.1 5.5 V
VEN(lo) Enable input low level 0 0.4 V
VEN(hys) Enable pin hysteresis 50 mV
VEN(dg) Enable pin deglitch time 20 µs
IEN Enable pin current VEN = 5V (Legacy Chip) 0.1 1 µA
VEN = 5V (New Chip) 0.1 0.25
VIT PG trip threshold VOUT decreasing 85 90 94 %VOUT
VHYS PG trip hysteresis 3
VPG(lo) PG output low voltage IPG = 1mA (sinking), VOUT < VIT (Legacy Chip) 0.3 V
IPG = 1mA (sinking), VOUT < VIT (New Chip) 0.12
IPG(lkg) PG leakage current VPG = 5.25V, VOUT > VIT (Legacy Chip) 0.1 1 µA
VPG = 5.25V, VOUT > VIT (New Chip) 0.001 0.05
TJ Operating junction temperature –40 125 ℃
TSD Thermal shutdown temperature Shutdown, temperature increasing 165 ℃
Reset, temperature decreasing 140
RPULLDOWN VBIAS = 5V, VEN = 0 V 0.83 kΩ
(1) Adjustable devices tested at 0.8 V; resistor tolerance is not taken into account.
(2) Dropout is defined as the voltage from VIN to VOUT when VOUT is 3% below nominal.
(3) 3.25 V is a test condition of this device and can be adjusted by referring to Figure 5-11.
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