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SGLS155B February 2003 – November 2016 TPS768-Q1

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

PWP|20
- MHTS001G

散热焊盘机械数据 (封装 | 引脚)

PWP|20
- PPTD245B

订购信息

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾

over operating ambient temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Input voltage, V_I ⁽²⁾	–0.3	13.5	V
Voltage at EN	–0.3	V_I + 0.3	V
Maximum PG voltage		16.5	V
Peak output current	Internally limited
Output voltage, V_O (OUT, FB)		7	V
Operating junction temperature, T_J	–40	150	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network terminal ground.

6.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾		±2000	V
		Charged-device model (CDM), per AEC Q100-011	All pins	±500
		Charged-device model (CDM), per AEC Q100-011	Corner pins (1, 4, 5, and 8)	±750

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

		MIN	MAX	UNIT
V_I	Input voltage⁽¹⁾	2.7	10	V
V_O	Voltage at OUT	1.2	5.5	V
I_O	Output current⁽²⁾	0	1	A
T_A	Operating ambient temperature⁽²⁾	–40	125	°C

(1) To calculate the minimum input voltage for the maximum output current, use the following equation: V_I(min) = V_O(max) + V_{(DO,max_load)}, where V_{(DO,max_load)} is the dropout voltage at maximum load.

(2) Continuous current and operating junction temperature are limited by internal protection circuitry, but it is not recommended that the device operate under conditions beyond those specified in this table for extended periods of time.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS768xx-Q1	UNIT
		PWP (HTSSOP)
		20 PINS
R_θJA	Junction-to-ambient thermal resistance	39.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	25.8	°C/W
R_θJB	Junction-to-board thermal resistance	22.1	°C/W
ψ_JT	Junction-to-top characterization parameter	0.8	°C/W
ψ_JB	Junction-to-board characterization parameter	21.9	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	1.7	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over recommended operating ambient temperature range, V_I= V_O(typ) + 1 V, I_O = 1 mA, EN = 0 V, C_O = 10 μF (unless otherwise noted)

PARAMETER			TEST CONDITIONS		MIN	TYP	MAX	UNIT
Output voltage (10-μA to 1-A load)⁽¹⁾		TPS76801-Q1	5.5 V ≥ V_O ≥ 1.5 V	T_J = 25°C		V_O		V
		TPS76801-Q1	5.5 V ≥ V_O ≥ 1.5 V	T_J = –40°C to 125°C	0.98 × V_O		1.02 × V_O
		TPS76818-Q1	2.8 V < V_IN < 10 V	T_J = 25°C		1.8
		TPS76818-Q1	2.8 V < V_IN < 10 V	T_J = –40°C to 125°C	1.764		1.836
		TPS76825-Q1	3.5 V < V_IN < 10 V	T_J = 25°C		2.5
		TPS76825-Q1	3.5 V < V_IN < 10 V	T_J = –40°C to 125°C	2.45		2.55
		TPS76833-Q1	4.3 V < V_IN < 10 V	T_J = 25°C		3.3
		TPS76833-Q1	4.3 V < V_IN < 10 V	T_J = –40°C to 125°C	3.234		3.366
		TPS76850-Q1	6 V < V_IN < 10 V	T_J = 25°C		5
		TPS76850-Q1	6 V < V_IN < 10 V	T_J = –40°C to 125°C	4.9		5.1
Quiescent current (GND current), EN = 0 V⁽¹⁾			T_J = 25°C 10 μA < I_O < 1 A, T_J = 25°C			85		μA
Quiescent current (GND current), EN = 0 V⁽¹⁾			T_J = –40°C to 125°C I_O = 1 A, T_J = –40°C to 125°C				125	μA
Output voltage line regulation (ΔV_O / V_O) ⁽¹⁾ ⁽²⁾			T_J = 25°C V_O + 1 V < V_I ≤ 10 V, T_J = 25°C			0.01		%/V
Load regulation						3		mV
Output noise voltage		TPS76818-Q1	T_J = 25°C BW = 200 Hz to 100 kHz, C_O = 10 μF, I_C = 1 A, T_J = 25°C			55		μVrms
Output current limit			V_O = 0 V			1.7	2	A
Thermal shutdown junction temperature						150		°C
Standby current			EN = V_I, 2.7 V < V_I< 10 V	T_J = 25°C		1		μA
Standby current			EN = V_I, 2.7 V < V_I< 10 V	T_J = –40°C to 125°C			10	μA
FB input current		TPS76801-Q1	V_FB = 1.5 V			2		nA
High-level enable input voltage					1.7			V
Low-level enable input voltage							0.9	V
Power-supply ripple rejection ⁽¹⁾			T_J= 25°C f = 1 kHz, C_O = 10 μF, T_J = 25°C			60		dB
PG	Minimum input voltage for valid PG		I_O(PG) = 300 μA			1.1		V
	Trip threshold voltage		V_O decreasing		92		98	%V_O
	Hysteresis voltage		Measured at V_O			0.5		%V_O
	Output low voltage		V_I = 2.7 V, I_O(PG) = 1 mA			0.15	0.4	V
	Leakage current		V_(PG) = 5 V				1	μA
EN input current			EN = 0 V		–1	0	1	μA
EN input current			EN = V_I		–1		1	μA
Dropout voltage ⁽³⁾		TPS76833-Q1	I_O = 1 A	T_J = 25°C		350		mV
		TPS76833-Q1		T_J = –40°C to 125°C			575
		TPS76850-Q1		T_J = 25°C		230
		TPS76850-Q1		T_J = –40°C to 125°C			380

(1) Minimum IN operating voltage is 2.7 V or V_O(typ) + 1 V, whichever is greater. Maximum IN voltage 10 V.

(2) If V_O ≤ 1.8 V then V_I(max) = 10 V, V_I(min) = 2.7 V: TPS768-Q1 q_27v_line_lvs211.gif

If V_O ≥ 2.5 V then V_I(max) = 10 V, V_I(min) = V_O + 1 V: TPS768-Q1 q_1v_line_lvs211.gif

(3) IN voltage equals V_O(typ) – 100 mV.

6.6 Typical Characteristics

Figure 1. TPS76833-Q1 Output Voltage vs Output Current

Figure 3. TPS76833-Q1 Output Voltage vs Ambient Temperature

Figure 5. TPS76833-Q1 Ground Current vs Ambient Temperature

Figure 7. TPS76833-Q1 Output Spectral Noise Density vs Frequency

Figure 9. TPS76833-Q1 Output Impedance vs Frequency

Figure 11. TPS76833-Q1 Line Transient Response

Figure 13. TPS76833-Q1 Output Voltage vs Time (at Start-Up)

Figure 15. Typical Region of Stability Equivalent Series Resistance ^{Equivalent series resistance (ESR) refers to the total series resistance, including the ESR of the capacitor, any series resistance added externally, and PWB trace resistance to C} vs Output Current

1. Equivalent series resistance (ESR) refers to the total series resistance, including the ESR of the capacitor, any series resistance added externally, and PWB trace resistance to C_O.