米6体育平台手机版

ZHCSPG4D december 2021 – august 2023 TPS7A14

PRODUCTION DATA

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DRV|6
YBK|6

散热焊盘机械数据 (封装 | 引脚)

订购信息

6.5 Electrical Characteristics

specified at T_J = –40°C to +125°C, V_IN = V_OUT(NOM)+ 0.1 V, V_BIAS = greater of 2.2 V or V_OUT(NOM) + 1.4 V, I_OUT = 1 mA, V_EN = 1.0 V, C_IN = 1 μF, C_OUT = 2.2 μF, and C_BIAS = 0.1 μF (unless otherwise noted); all typical values are at T_J = 25°C

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OUT	Accuracy over temperature	V_OUT(NOM) + 0.1 V ≤ V_IN ≤ 2.2 V, Greater of 2.2 V or V_OUT(NOM) + 1.4 V ≤ V_BIAS ≤ 5.5 V, 1 mA ≤ I_OUT ≤ 1 A	T_J = –40°C to +125°C, DRV package	–1.25		1	%
			T_J = –40°C to +125°C, YBK package	–1.5		1
			T_J= –40°C to +85°C	–1		1
ΔV_OUT / ΔV_IN	V_INline regulation	V_OUT(NOM) + 0.1 V ≤ V_IN≤ 2.2 V, DRV package		–3		3	mV
ΔV_OUT / ΔV_IN	V_INline regulation	V_OUT(NOM) + 0.1 V ≤ V_IN≤ 2.2 V, T_J = –40°C to +85°C, YBK package		–2.5		2.5	mV
ΔV_OUT / ΔV_BIAS	V_BIASline regulation	V_OUT(NOM) + 1.4 V ≤ V_BIAS ≤ 5.5 V, DRV package		–3	±0.15	3	mV
ΔV_OUT / ΔV_BIAS	V_BIASline regulation	V_OUT(NOM) + 1.4 V ≤ V_BIAS ≤ 5.5 V, T_J = –40°C to +85°C, YBK package		–2.5	±0.15	2.5	mV
ΔV_OUT / ΔI_OUT	Load regulation	1 mA ≤ I_OUT ≤ 1 A			0.2		%/A
I_Q(BIAS)	Bias pin current	I_OUT = 0 mA, DRV package				43	µA
		I_OUT = 0 mA, T_J = –40°C to +85°C, YBK package				26	µA
		I_OUT = 1 A, DRV package				17	mA
		I_OUT = 1 A, T_J = –40°C to +85°C, YBK package				12	mA
I_Q(IN)	Input pin current⁽¹⁾	I_OUT = 0 mA, DRV package				118	µA
I_Q(IN)	Input pin current⁽¹⁾	I_OUT = 0 mA, TJ = –40°C to +85°C				5.7	µA
I_GND	Ground pin current	I_OUT = 1 A, DRV package			480	660	µA
I_GND	Ground pin current	I_OUT = 1 A, T_J = –40°C to +85°C			480	620	µA
I_SHDN(BIAS)	V_BIAS shutdown current	V_IN = 2.2 V, V_BIAS = 5.5 V, V_EN ≤ 0.2 V, DRV package			0.3	9	µA
I_SHDN(BIAS)	V_BIAS shutdown current	V_IN = 2.2 V, V_BIAS = 5.5 V, V_EN ≤ 0.2 V, T_J = –40°C to +85°C			0.3	3.8	µA
I_SHDN(IN)	V_IN shutdown current	V_IN = 1.8 V, V_BIAS = 5.5 V, V_EN ≤ 0.2 V, DRV package			1	41	µA
I_SHDN(IN)	V_IN shutdown current	V_IN = 1.8 V, V_BIAS = 5.5 V, V_EN ≤ 0.2 V, T_J = –40°C to +85°C			1	9.2	µA
I_CL	Output current limit	V_OUT = 0.95 × V_OUT(NOM)		1.035	1.6	2.45	A
I_SC	Short circuit current limit	V_OUT = 0 V			600		mA
V_DO(IN)	V_IN dropout voltage⁽²⁾	V_IN = 0.95 x V_OUT(NOM), I_OUT = 1 A	T_J = –40°C to + 125°C			99	mV
			T_J = –40°C to + 85°C, DRV package			77
			T_J = –40°C to + 85°C, YBK package			70
V_DO(BIAS)	V_BIAS dropout voltage⁽²⁾	V_BIAS = greater of 1.7V or V_OUT(nom) + 0.6 V, V_SENSE = 0.95 x V_OUT(nom), I_OUT = 1 A, DRV package				1.115	V
V_DO(BIAS)	V_BIAS dropout voltage⁽²⁾	V_BIAS = greater of 1.7V or V_OUT(nom) + 0.6 V, V_SENSE = 0.95 x V_OUT(nom), I_OUT = 1 A, YBK package				1.1	V
V_INPSRR	V_INpower-supply rejection ratio	f = 100 Hz	I_OUT = 3 mA		90		dB
			I_OUT = 500 mA		80
			I_OUT = 1 A		80
		f = 1 kHz	I_OUT = 3 mA		90
			I_OUT = 500 mA		80
			I_OUT = 1 A		70
		f = 10 kHz	I_OUT = 3 mA		70
			I_OUT = 500 mA		60
			I_OUT = 1 A		50
		f = 100 kHz	I_OUT = 3 mA		60
			I_OUT = 500 mA		43
			I_OUT = 1 A		33
		f = 1 MHz	I_OUT = 3 mA		60
			I_OUT = 500 mA		24
			I_OUT = 1 A		15
		f = 1 MHz, V_IN = V_OUT + 150 mV	I_OUT = 3 mA		69
			I_OUT = 500 mA		42
			I_OUT = 1 A		33
V_BIASPSRR	V_BIAS power-supply rejection ratio	f = 1 kHz	I_OUT = 500 mA		65		dB
		f = 100 kHz			45
		f = 1 MHz			25
V_n	Output voltage noise	Bandwidth = 10 Hz to 100 kHz, V_OUT = 0.8 V, 5mA ≤ I_OUT ≤ 1 A			7.2		µV_RMS
V_UVLO(BIAS)	Bias supply UVLO	V_BIAS rising		1.15	1.42	1.7	V
V_UVLO(BIAS)	Bias supply UVLO	V_BIAS falling		1.0	1.3	1.63	V
V_{UVLO_HYST(BIAS)}	Bias supply hysteresis	V_BIAS hysteresis			100		mV
V_UVLO(IN)	Input supply UVLO	V_INrising		584	603	623	mV
V_UVLO(IN)	Input supply UVLO	V_IN falling		530	552	566	mV
V_{UVLO_HYST(IN)}	Input supply hysteresis	V_IN hysteresis			50		mV
t_STR	Start-up time⁽³⁾				186		µs
V_EN(HI)	EN pin logic high voltage⁽⁴⁾			0.6		6	V
V_EN(LOW)	EN pin logic low voltage⁽⁴⁾			0		0.25	V
I_EN	EN pin current	EN = 5.5 V, DRV package		-25	10	25	nA
I_EN	EN pin current	EN = 5.5 V, T_J = –40°C to +85°C		-20	10	20	nA
R_PULLDOWN	Pulldown resistor	V_IN = 0.9 V, V_OUT(nom) = 0.8 V, V_BIAS = 1 V, V_EN = 0 V, P version only			36		Ω
T_SD	Thermal shutdown temperature	Shutdown, temperature rising			165		°C
T_SD	Thermal shutdown temperature	Reset, temperature falling			140		°C

(1) This is the current flowing from V_IN to GND.

(2) Dropout is not measured for V_OUT < 0.6 V. V_BIAS dropout applies only for V_BIAS of 2.2 V or greater.

(3) Startup time = time from EN assertion to 0.95 × V_OUT(NOM).

(4) An input voltage within the minimum to maximum range is interpreted as the correct logic level.