ZHCS515A December   2011  – August 2015 TPS7A4201

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dissipation Ratings
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable Pin Operation
      2. 7.3.2 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Adjustable Operation
      2. 8.1.2 Transient Voltage Protection
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Capacitor Recommendations
        2. 8.2.2.2 Input and Output Capacitor Requirements
        3. 8.2.2.3 Bypass Capacitor Requirements
        4. 8.2.2.4 Maximum AC Performance
        5. 8.2.2.5 Transient Response
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
    4. 10.4 Power Dissipation
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted).(1)
MIN MAX UNIT
Voltage IN pin to GND pin –0.3 +30 V
OUT pin to GND pin –0.3 +30 V
OUT pin to IN pin –30 +0.3 V
FB pin to GND pin –0.3 +2 V
FB pin to IN pin –30 +0.3 V
EN pin to IN pin –30 0.3 V
EN pin to GND pin –0.3 +30 V
Current Peak output Internally limited
Temperature Operating junction temperature, TJ –40 +125 °C
Storage, Tstg –65 +150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-maximum rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN 7 28 V
VOUT 1.161 26 V
VEN 0 28 V
IOUT 0 50 mA

6.4 Thermal Information

THERMAL METRIC(1) TPS7A4201 UNIT
DGN (MSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 66.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 54.1 °C/W
RθJB Junction-to-board thermal resistance 38.1 °C/W
ψJT Junction-to-top characterization parameter 2.0 °C/W
ψJB Junction-to-board characterization parameter 37.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 15.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At TJ = –40°C to +125°C, VIN = VOUT(NOM) + 2.0 V or VIN = 7.0 V (whichever is greater), VEN = VIN, IOUT = 100 µA, CIN = 1 μF, COUT = 4.7 μF, and FB tied to OUT, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage range 7.0 28.0 V
VREF Internal reference TJ = +25°C, VFB = VREF, VIN = 9 V, IOUT = 25 mA 1.161 1.173 1.185 V
VOUT Output voltage range(1) VIN ≥ VOUT(NOM) + 2.0 V VREF 26 V
Nominal accuracy TJ = +25°C, VIN = 9 V, IOUT = 25 mA –1.0 +1.0 %VOUT
Overall accuracy VOUT(NOM) + 2.0 V ≤ VIN ≤ 24 V(2)
100 µA ≤ IOUT ≤ 50 mA		 –2.5 +2.5 %VOUT
ΔVO(ΔVI) Line regulation 7 V ≤ VIN ≤ 28 V 0.03 %VOUT
ΔVO(ΔVL) Load regulation 100 µA ≤ IOUT ≤ 50 mA 0.31 %VOUT
VDO Dropout voltage VIN = 17 V, VOUT(NOM) = 18 V, IOUT = 20 mA 290 mV
VIN = 17 V, VOUT(NOM) = 18 V, IOUT = 50 mA 0.78 1.3 V
ILIM Current limit VOUT = 90% VOUT(NOM), VIN = 7.0 V, TJ ≤ +85°C 65 117 200 mA
VOUT = 90% VOUT(NOM), VIN = 9.0 V 65 128 200 mA
IGND Ground current 7 V ≤ VIN ≤ 28 V, IOUT = 0 mA 25 65 μA
IOUT = 50 mA 25 μA
ISHDN Shutdown supply current VEN = +0.4 V 4.1 20 μA
I FB Feedback current(3) –0.1 0.01 0.1 µA
IEN Enable current 7 V ≤ VIN ≤ 28 V, VIN = VEN 0.02 1.0 μA
VEN_HI Enable high-level voltage 1.5 VIN V
VEN_LO Enable low- level voltage 0 0.4 V
VNOISE Output noise voltage VIN = 12 V, VOUT(NOM) = VREF, COUT = 10 μF,
BW = 10 Hz to 100 kHz		 58 μVRMS
VIN = 12 V, VOUT(NOM) = 5 V, COUT = 10 μF, CBYP(4) = 10 nF, BW = 10 Hz to 100 kHz 73 μVRMS
PSRR Power-supply rejection ratio VIN = 12 V, VOUT(NOM) = 5 V, COUT = 10 μF, CBYP(4) = 10 nF, f = 100 Hz 65 dB
TSD Thermal shutdown temperature Shutdown, temperature increasing +170 °C
Reset, temperature decreasing +150 °C
TJ Operating junction temperature range –40 +125 °C
(1) To ensure stability at no-load conditions, a current from the feedback resistive network greater than or equal to 10 μA is required.
(2) Maximum input voltage (VIN) is limited to 24 V because of the package power dissipation limitations at full load [P ≈ (VIN – VOUT) × IOUT = (24 V – VREF) × 50 mA ≈ 1.14 V], given an ambient temperature of +50°C. The device is capable of sourcing steady-state load currents as high as 60 mA at higher input voltages without damage if the maximum operating junction temperature (TJ) is not exceeded. The Electrical Characteristics are not characterized for load current (IOUT) exceeding 50 mA.
(3) IFB > 0 flows out of the device.
(4) CBYP refers to a bypass capacitor connected to the FB and OUT pins.

6.6 Dissipation Ratings

BOARD PACKAGE RθJA RθJC DERATING FACTOR ABOVE TA = +25°C TA ≤ +25°C POWER RATING TA = +70°C POWER RATING TA = +85°C POWER RATING
High-K(1) DGN 55.9°C/W 8.47°C/W 16.6mW/°C 1.83W 1.08W 0.833W
(1) The JEDEC High-K (2s2p) board design used to derive this data was a 3-inch x 3-inch multilayer board with 2-ounce internal power and ground planes and 2-ounce copper traces on top and bottom of the board.

6.7 Typical Characteristics

At TJ = –40°C to +125°C, VIN = VOUT(NOM) + 2.0 V or VIN = 9.0 V (whichever is greater), VEN = VIN, IOUT = 100 µA, CIN = 1 μF, COUT = 4.7 μF, and FB tied to OUT, unless otherwise noted.
TPS7A4201 tc_load_trans_bvs162.gif Figure 1. Load Transient Response
TPS7A4201 G002_BVS184.png Figure 3. Feedback Voltage
TPS7A4201 tc_ifb_bvs162.png Figure 5. Feedback Current
TPS7A4201 tc_vdo_bvs162.png Figure 7. Dropout Voltage
TPS7A4201 tc_noise_bvs162.png Figure 9. Output Spectral Noise Density
TPS7A4201 tc_psrr_bvs162.png Figure 11. Power-Supply Rejection Ratio
TPS7A4201 G001_BVS184.png Figure 2. Line Regulation
TPS7A4201 G003_BVS184.png Figure 4. Quiescent Current vs Input Voltage
TPS7A4201 tc_ignd_bvs162.png Figure 6. Ground Current
TPS7A4201 tc_ven_threshold_bvs162.gif Figure 8. Enable Threshold Voltage
TPS7A4201 tc_ilim_bvs162.gif Figure 10. Current Limit
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