ZHCSQT5 July   2022 TPS7A57

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Voltage Setting and Regulation
      2. 7.3.2 Low-Noise, Ultra-High Power-Supply Rejection Ratio (PSRR)
      3. 7.3.3 Programmable Soft-Start (NR/SS Pin)
      4. 7.3.4 Precision Enable and UVLO
      5. 7.3.5 Charge Pump Enable and BIAS Rail
      6. 7.3.6 Power-Good Pin (PG Pin)
      7. 7.3.7 Active Discharge
      8. 7.3.8 Thermal Shutdown Protection (TSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
      4. 7.4.4 Current-Limit Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Precision Enable (External UVLO)
      2. 8.1.2  Undervoltage Lockout (UVLO) Operation
        1. 8.1.2.1 IN Pin UVLO
        2. 8.1.2.2 BIAS UVLO
        3. 8.1.2.3 Typical UVLO Operation
        4. 8.1.2.4 UVLO(IN) and UVLO(BIAS) Interaction
      3. 8.1.3  Dropout Voltage (VDO)
      4. 8.1.4  Input and Output Capacitor Requirements (CIN and COUT)
      5. 8.1.5  Recommended Capacitor Types
      6. 8.1.6  Soft-Start, Noise Reduction (NR/SS Pin), and Power-Good (PG Pin)
      7. 8.1.7  Optimizing Noise and PSRR
      8. 8.1.8  Adjustable Operation
      9. 8.1.9  Load Transient Response
      10. 8.1.10 Current Limit and Foldback Behavior
      11. 8.1.11 Charge Pump Operation
      12. 8.1.12 Sequencing
      13. 8.1.13 Power-Good Functionality
      14. 8.1.14 Output Impedance
      15. 8.1.15 Paralleling for Higher Output Current and Lower Noise
      16. 8.1.16 Current Mode Margining
      17. 8.1.17 Voltage Mode Margining
      18. 8.1.18 Power Dissipation (PD)
      19. 8.1.19 Estimating Junction Temperature
      20. 8.1.20 TPS7A57EVM-081 Thermal Analysis
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 商标
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 术语表
  10. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safemanufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safemanufacturing with a standard ESD control process.
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