ZHCSAM1F December 2012 – December 2017 TPS7A66-Q1 , TPS7A69-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE AND CURRENT (VIN) | ||||||
VIN | Input voltage | Fixed 5-V output, IO = 1 mA | 5.5 | 40 | V | |
Fixed 3.3-V output, IO = 1 mA | 4 | 40 | ||||
I(q) | Quiescent current | VIN = 5.5 V to 40 V, EN = ON, IO = 0.2 mA | 12 | 20 | µA | |
I(Sleep) | Input sleep current | No load current and EN = OFF | 4 | µA | ||
I(EN) | EN pin current | V(EN) = 40 V | 1 | µA | ||
V(bg) | Band gap | Reference voltage for FB | 1.199 | 1.223 | 1.247 | V |
V(VinUVLO) | Undervoltage lockout detection | Ramp VIN down until output turns OFF | 2.6 | V | ||
V(UVLOhys) | Undervoltage hysteresis | 1 | V | |||
ENABLE INPUT (EN) | ||||||
VIL | Logic input low level | 0 | 0.4 | V | ||
VIH | Logic input high level | 1.7 | V | |||
REGULATED OUTPUT (VOUT) | ||||||
VOUT | Regulated output | IO = 1 mA, TJ = 25°C | –1% | 1% | ||
VIN = 6 V to 40 V, IO = 1 mA to 150 mA, fixed 5-V version | –2% | 2% | ||||
VIN = 4 V to 40 V, IO = 1 mA to 150 mA, fixed 3.3-V version | –2% | 2% | ||||
VIN = VOUT + 0.45 V and Vin ≥ 4 V, IO = 1 mA to 150 mA, adjustable version(1) | –2% | 2% | ||||
V(line-reg) | Line regulation | VIN = 5.5 V to 40 V, IO = 50 mA | 5 | mV | ||
V(load-reg) | Load regulation | IO = 1 mA to 150 mA | 20 | mV | ||
V(dropout) | Dropout voltage | V(dropout) = VIN – VOUT, IOUT = 80 mA | 180 | 240 | mV | |
VIN – VOUT, IOUT = 150 mA | 300 | 450 | ||||
VIN = 3 V, V(dropout) = VIN – VOUT, IO = 5 mA | 12 | 27.5 | 58 | |||
VIN = 3 V, V(dropout) =VIN –VOUT, IO = 30 mA | 44 | 80 | 145 | |||
IO | Output current | VOUT in regulation | 0 | 150 | mA | |
I(lreg-CL) | Output current limit | VOUT short to ground | 500 | 800 | mA | |
PSRR | Power supply ripple rejection(2) | VIN = 12 V, IL = 10 mA, output capacitance = 2.2 µF | dB | |||
Frequency = 100 Hz | 60 | |||||
Frequency = 100 kHz | 40 | |||||
VOLTAGE SENSING PRE-WARNING | ||||||
VI(S-th) | Sense low threshold | V(SI) decreasing | 1.089 | 1.123 | 1.157 | V |
VI(S-th,hys) | Sense threshold hysteresis | 50 | 100 | 150 | mV | |
VOL(S) | Sense output low voltage | (V(SI) ≤ 1.06 V, VIN ≥ 4 V, R(SO) = 10 kΩ to VOUT | 0.4 | V | ||
IOH(S) | Sense output leakage | (V(SO) = 5 V, V(SI) ≥ 1.5 V) | 1 | µA | ||
II(S) | Sense input current | –1 | 0.1 | 1 | µA | |
RESET (PG) | ||||||
VOL | Reset output, low voltage | IOL = 0.5 mA | 0.4 | V | ||
Ilkg | Leakage current | Reset pulled up to VOUT through a 10-kΩ resistor | 1 | µA | ||
V(TH-POR) | Power-on-reset threshold | VOUT increasing | 89.6 | 91.6 | 93.6 | % of VOUT |
V(Thres) | Hysteresis | 2 | % of VOUT | |||
RESET DELAY (CT) | ||||||
I(Chg) | Delay-capacitor charging current | VCT = 0 V | 1.4 | µA | ||
V(th) | CT threshold to release PG high | 1 | V | |||
OPERATING TEMPERATURE RANGE | ||||||
TJ | Junction temperature | –40 | 150 | °C | ||
T(shutdown) | Junction shutdown temperature | 175 | °C | |||
T(hyst) | Hysteresis of thermal shutdown | 20 | °C |