ZHCSE23A January 2015 – August 2015 TPS7B4253-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Unregulated input voltage | IN(2)(3) | –40 | 45 | V |
Enable input voltage | Enable input voltage(2)(3) | –40 | 45 | V |
Regulated output voltage | Regulated output voltage(2)(4) | –1 | 45 | V |
Voltage difference between the input and output | IN – OUT | –40 | 45 | V |
Reference voltage | ADJ(2)(3) | –0.3 | 45 | V |
Feedback input voltage for the tracker | FB(2)(3) | –1 | 45 | V |
Reference voltage minus the input voltage | ADJ – IN(5) | 18 | V | |
Operating junction temperature, TJ | –40 | 150 | °C | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002(1) | NC pins | ±2000 | kV |
All pins except for NC pins | ±4000 | kV | |||
Charged device model (CDM), per AEC Q100-011 | ±1000 | kV |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Unregulated input voltage(2) | 4 | 40 | V |
VEN | Enable input voltage | 0 | 40 | V |
VADJ | Adjust and enable input voltage | 1.5 | 18 | V |
VFB | Feedback input voltage for the tracker | 1.5 | 18 | V |
VOUT | Output voltage | 1.5 | 40 | V |
C(OUT) | Output capacitor requirements(3) | 10 | 500 | µF |
Output ESR requirements(4) | 0.001 | 20 | Ω | |
TJ | Operating junction temperature range | –40 | 150 | °C |
THERMAL METRIC(1) | TPS7B4253-Q1 | UNIT | ||
---|---|---|---|---|
DDA (SO PowerPAD) | PWP (HTSSOP) | |||
8 PINS | 20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 45.4 | 45.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 51.1 | 29.2 | °C/W |
RθJB | Junction-to-board thermal resistance | 27.0 | 24.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 8.2 | 1.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 26.9 | 24.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 6.4 | 3.7 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VI(UVLO) | IN undervoltage detection | VIN rising | 3.65 | V | ||
VIN falling | 2.8 | V | ||||
ΔVO | Output voltage tracking accuracy(1) | IOUT = 100 µA to 300 mA, VIN = 4 to 40 V VADJ < VIN – 1 V 1.5 V < VADJ < 18 V for HTSSOP 2 V < VADJ < 18 V for SO PowerPAD |
–4 | 4 | mV | |
ΔVO(ΔIO) | Load regulation steady-state | IOUT = 0.1 to 300 mA, VADJ= 5 V | 4 | mV | ||
ΔVO(ΔVI) | Line regulation steady-state | IOUT= 10 mA, VIN = 6 to 40 V, VADJ = 5 V | 4 | mV | ||
PSRR | Power supply ripple rejection | ƒrip = 100 Hz, Vrip = 0.5 VPP, C(OUT) = 10 µF, IOUT = 100 mA | 70 | dB | ||
V(DROPOUT) | Dropout voltage (V(DROPOUT) = VIN – VOUT) |
IOUT = 200 mA, VIN = VADJ ≥ 4 V(2) | 320 | 520 | mV | |
IO(lim) | Output current limitation | VADJ = 5 V, OUT short to GND | 301 | 450 | 520 | mA |
IR(IN) | Reverse current at IN | VIN = 0 V, VOUT = 40 V, VADJ = 5 V | –2 | 0 | µA | |
IR(–IN) | Reverse current at negative IN | VIN = –40 V, VOUT = 0 V, VADJ = 5 V | –10 | 0 | µA | |
TSD | Thermal shutdown temperature | TJ increases because of power dissipation generated by the IC | 175 | °C | ||
TSD_hys | Thermal shutdown hysteresis | 15 | °C | |||
IQ | Current consumption | 4 V ≤ VIN ≤ 40 V, VADJ = 0 V; VEN = 0 V | 2 | 4 | µA | |
4 V ≤ VIN ≤ 40 V, VEN ≥ 2 V, VADJ < 0.8 V | 7 | 18 | ||||
4 V ≤ VIN ≤ 40 V, IOUT < 100 µA, VADJ = 5 V | 60 | 100 | ||||
4 V ≤ VIN ≤ 40 V, IOUT < 300 mA, VADJ = 5V | 350 | 400 | ||||
IQ(DROPOUT) | Current consumption in dropout region | VIN = VADJ = 5 V, IOUT = 100 µA | 70 | 140 | µA | |
II(ADJ) | Adjust input current | HTSSOP package, VADJ = VFB = 5 V | 0.5 | µA | ||
SO PowerPAD package, VADJ = VFB = 5 V | 5.5 | |||||
V(ADJ_LOW) | Adjust low signal valid | VOUT = 0 V | 0 | 0.8 | V | |
V(ADJ_HIGH) | Adjust high signal valid | |VOUT – VADJ| < 5 mV | 1.5 | 18 | V | |
V(EN_LOW) | Enable low signal valid | VOUT = 0 V | 0 | 0.7 | V | |
V(EN_HIGH) | Enable high Signal Valid | OUT settled | 2 | 40 | V | |
IEN | Enable pulldown current | 2V < VEN < 40 V | 5 | µA | ||
IFB | FB bias current | VADJ = VFB = 5 V | 0.5 | µA |
VIN = VADJ = 4 V | IOUT = 200 mA |
C(OUT) = 10 µF | IOUT = 1 mA | TA = 25°C |
VFB = VOUT | ||
VIN = 40 to 6 V | VADJ = 5 V | C(OUT) = 10 µF |
IOUT = 100 mA, 20 µs/div |
VIN = 40 to 6 V | VADJ = 5 V | C(OUT) = 10 µF |
IOUT = 10 mA, 20 µs/div |
VIN = 14 V | VADJ = 5 V | C(OUT) = 10 µF | ||
IOUT = 100 to 10 mA, 40 µs/div |
VIN = VADJ = 4 V | ||
VADJ = VEN = 5 V | ||
C(OUT) = 10 µF | IOUT = 100 mA | TA = 25°C |
VFB < VOUT | ||
VIN = 6 to 40 V | VADJ = 5 V | C(OUT) = 10 µF |
IOUT = 100 mA, 20 µs/div | ||
VIN = 6 to 40 V | VADJ = 5 V | C(OUT) = 10 µF |
IOUT = 10 mA, 20 µs/div |
VIN = 14 V | VADJ = 5 V | C(OUT) = 10 µF |
IOUT = 10 to 100 mA, 40 µs/div |