ZHCSF00A April 2016 – May 2016 TPS7B4254-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Unregulated input voltage | IN(2) | –40 | 45 | V |
Regulated output voltage | OUT(2)(3) | –1 | 45 | V |
Voltage difference between the input and output | IN – OUT | –40 | 45 | V |
Reference voltage | ADJ(2) | –0.3 | 45 | V |
Feedback input voltage for the tracker | FB(2) | –1 | 45 | V |
Reference voltage minus the input voltage | ADJ – IN(4) | 18 | V | |
Operating junction temperature, TJ | –40 | 150 | ºC | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | All pins except NC | ±4000 | V |
NC pins | ±2000 | ||||
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Unregulated input voltage(2) | 4 | 40 | V |
VADJ | Reference input voltage | 1.5 | 18 | V |
VFB | Feedback input voltage for the tracker | 1.5 | 18 | V |
VOUT | Regulated output voltage | 1.5 | 40 | V |
COUT | Output capacitor requirements(3) | 10 | 500 | µF |
Output ESR requirements(4) | 0.001 | 20 | Ω | |
TJ | Operating junction temperature | –40 | 150 | ºC |
THERMAL METRIC(1) | TPS7B4254-Q1 | UNIT | |
---|---|---|---|
DDA (HSOP) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 45.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 51.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 27 | °C/W |
ψJT | Junction-to-top characterization parameter | 8.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 26.9 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 6.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VIN(UVLO) | IN undervoltage detection | VIN rising | 3.65 | V | ||
VIN falling | 2.8 | V | ||||
ΔVOUT | Output voltage tracking accuracy(1) | IOUT = 100 μA to 150 mA, VIN = 4 to 40 V VADJ < VIN – 1 V 2 V < VADJ < 18 V |
–4 | 4 | mV | |
ΔVOUT(ΔIO) | Load regulation, steady-state | IOUT = 0.1 to 150 mA, VADJ= 5 V | 4 | mV | ||
ΔVOUT(ΔVI) | Line regulation, steady-state | IOUT = 10 mA, VIN = 6 to 40 V, VADJ = 5 V | 4 | mV | ||
PSRR | Power-supply ripple rejection | frip = 100 Hz, Vrip = 0.5 VPP, COUT = 10 μF, IOUT = 100 mA | 70 | dB | ||
VDROPOUT | Dropout voltage (VDROPOUT = VIN – VOUT) | IOUT = 100 mA, VIN = VADJ ≥ 4 V(2) | 160 | 260 | mV | |
IOUT(LIM) | Output current limitation | VADJ = 5 V, OUT short to GND | 151 | 450 | 520 | mA |
IR(IN) | Reverse current at IN | VIN = 0 V, VOUT = 40 V, VADJ = 5 V | –2 | 0 | µA | |
IR(–IN) | Reverse current at negative IN | VIN = –40 V, VOUT = 0 V, VADJ = 5 V | –10 | µA | ||
TSD | Thermal shutdown temperature | 175 | ºC | |||
TSD_hys | Thermal shutdown hysteresis | 15 | ºC | |||
IQ | Current consumption | 4 V ≤ VIN ≤ 40 V, VADJ = 0 V | 2 | 4 | µA | |
4 V ≤ VIN ≤ 40 V, VADJ = 5 V, IOUT < 100 µA | 60 | 100 | µA | |||
4 V ≤ VIN ≤ 40 V, VADJ = 5 V, IOUT < 150 mA | 210 | 260 | µA | |||
IQ(DROPOUT) | Current consumption in dropout region | VIN = VADJ = 5 V, IOUT = 100 μA | 70 | 140 | µA | |
IADJ | Reference input current | VADJ = VFB = 5 V | 5.5 | µA | ||
VADJ(LOW) | Reference low signal valid | VOUT = 0 V | 0 | 0.7 | V | |
VADJ(HIGH) | Reference high signal valid | |VOUT – VADJ| < 4 mV | 2 | 18 | V | |
IFB | FB bias current | VADJ = VFB = 5 V | 0.5 | µA |
V |
V |
VIN = VADJ = 4 V | IOUT = 100 mA |
V |
V |
COUT = 10 µF | IOUT = 1 mA | TA = 25°C |
VIN = 14 V | VADJ = 5 V |
VFB = VOUT |
V | ||
V |
VIN = 40 to 6 V | VADJ = 5 V | COUT = 10 µF |
IOUT = 10 mA | 40 µs/div |
VIN = 40 to 6 V | VADJ = 5 V | COUT = 10 µF |
IOUT = 100 mA | 40 µs/div |
VIN = 14 V | VADJ = 5 V | COUT = 10 µF | ||
IOUT = 100 mA to 10 mA | 100 µs/div |
V |
VIN = VADJ = 4 V |
V |
V |
VADJ = 5 V |
COUT = 10 µF | IOUT = 100 mA | TA = 25°C |
VIN = 14 V | VADJ = 5 V |
VFB < VOUT |
VIN = 6 to 40 V | VADJ = 5 V | COUT = 10 µF |
IOUT = 10 mA | 40 µs/div |
VIN = 6 to 40 V | VADJ = 5 V | COUT = 10 µF |
IOUT = 100 mA | 40 µs/div |
VIN = 14 V | VADJ = 5 V | COUT = 10 µF |
IOUT = 10 mA to 100 mA | 100 µs/div |