ZHCSDQ2C January 2015 – September 2018 TPS7B7701-Q1 , TPS7B7702-Q1
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| CURRENT SENSE AND CURRENT-LIMIT | ||||||
| td(SENSE_SEL_r) | Current-sense delay time from the rising edge of SENSE_SEL(1) | V(ENx) ≥ 2 V, SENSE_EN = GND, SENSE_SEL rise from 0 to 5 V | 10 | µs | ||
| td(SENSE_SEL_f) | Current-sense delay time from the falling edge of SENSE_SEL(1) | V(ENx) ≥ 2 V, SENSE_EN = GND, SENSE_SEL fall from 5 to 0 V | 10 | µs | ||
| td(SENSE_EN_r) | Current-sense delay time from rising edge of SENSE_EN(1) | V(ENx) ≥ 2 V, SENSE_EN rise from 0 to 5 V | 10 | µs | ||
| td(SENSE_EN_f) | Current-sense delay time from falling edge of SENSE_EN(1) | V(ENx) ≥ 2 V, SENSE_EN fall from 5 to 0 V | 10 | µs | ||
| FAULT DETECTION | ||||||
| t(PD_RC) | Reverse current (Short-to-BAT) shutdown deglitch time | Delay to shut down the switch or LDO after a drop over ron becomes negative, I(OUTx) = –200 mA (typical), TA = 25°C | 5 | 20 | µs | |
| t(BLK_RC) | Reverse current blanking time | Blanking time for reverse-current detection after power up, the rising edge of the ENx pin, or the current limiting event is over | 16 | ms | ||