ZHCSDQ2C January 2015 – September 2018 TPS7B7701-Q1 , TPS7B7702-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY VOLTAGE AND CURRENT (IN) | |||||||
VI | Input voltage | 4.5 | 40 | V | |||
IQ | Quiescent current | TPS7B7701-Q1: VI = 4.5 to 40 V, V(EN) ≥ 2 V, I(OUT) = 0.1 mA | 0.6 | 1 | mA | ||
TPS7B7702-Q1: VI = 4.5 to 40 V, V(EN1) and V(EN2) ≥ 2 V, I(OUT1) and I(OUT2) = 0.1 mA | 0.6 | 1 | |||||
I(shutdown) | Shutdown current | TPS7B7701-Q1: EN = GND | 5 | µA | |||
TPS7B7702-Q1: EN1 = EN2 = GND | 5 | ||||||
Inom | Operating current | TPS7B7701-Q1: V(EN) ≥ 2 V, I(OUT) ≤ 300 mA, GND current | 4.5 | mA | |||
TPS7B7702-Q1: V(EN1) and V(EN2) ≥ 2 V, I(OUT1) and I(OUT2) ≤ 300 mA, GND current | 6 | ||||||
V(BG) | Bandgap | Reference voltage for FB | –2% | 1.233 | 2% | V | |
V(UVLO) | Undervoltage lockout falling | Ramp IN down until the output turns off | 4 | V | |||
Vhys | Hysteresis | 0.4 | V | ||||
INPUT CONTROL PINS (EN, EN1, EN2, SENSE_EN, AND SENSE_SEL) | |||||||
VIL | Logic input low level | For EN, EN1, EN2, SENSE_EN, and SENSE_SEL | 0 | 0.7 | V | ||
VIH | Logic input high level | For EN, EN1, EN2, SENSE_EN, and SENSE_SEL | 2 | V | |||
II(SENSE_EN) | SENSE_EN input current | V(SENSE_EN) = 5 V, V(ENx) ≥ 2 V | 10 | µA | |||
II(SENSE_SEL) | SENSE_SEL input current | V(SENSE_EN) = 5 V, V(ENx) ≥ 2 V | 10 | µA | |||
II(EN) | Enable input current | V(ENx) ≤ 40 V | 10 | µA | |||
REGULATED OUTPUT (OUT, OUT1, AND OUT2) | |||||||
VO | Regulated output | 40 V ≥ VI ≥ VO + 1.5 V and VI ≥ 4.5 V, IO = 1 to 300 mA(1) | –2% | 2% | |||
ΔVO(ΔVI) | Line regulation | VI = VO + 1.5 V to 40 V and VI ≥ 6 V, IO = 10 mA, voltage variation on FB pin | 10 | mV | |||
ΔVO(ΔIO) | Load regulation | IO = 1 mA to 200 mA, voltage variation on FB pin | 20 | mV | |||
V(DROPOUT) | Dropout voltage | Measured between IN and OUTx, IO = 100 mA | 500 | mV | |||
IO | Output current | VO in regulation | 0 | 300 | mA | ||
PSRR | Power supply ripple rejection(2) | IO = 100 mA, CO = 2.2 µF, ƒ = 100 Hz | 73 | dB | |||
CURRENT SENSE AND CURRENT-LIMIT | |||||||
IO/ISENSE | OUTx to SENSEx current ratio (IO / ISENSEx) | VI = 4.5 V to 40 V, 5 mA ≤ IO ≤ 300 mA | 198 | ||||
OUTx to SENSEx current ratio accuracy | IO = 100 to 300 mA | –3% | 3% | ||||
IO = 50 to 100 mA | –5% | 5% | |||||
IO = 10 to 50 mA | –10% | 10% | |||||
IO = 5 to 10 mA | –20% | 20% | |||||
IO/ILIM | OUTx to LIMx current ratio (IO / ILIM) | VI = 4.5 V to 40 V, 50 mA ≤ I(LIMx) ≤ 300 mA | 198 | ||||
I(LIMx) | Programmable current-limit accuracy(3) | VI = 4.5 V to 40 V, 50 mA ≤ I(LIMx) ≤ 300 mA | –8% | 8% | |||
IL(LIMx) | Internal current-limit | LIMx shorted to GND | 340 | 550 | mA | ||
Ilkg | SENSE, SENSE1, SENSE2, LIM, LIM1, and LIM2 leakage current | ENx = GND, TA = 25°C | 2 | µA | |||
V(LIMx_th) | Current-limit threshold voltage | Voltage on the LIM, LIM1, and LIM2 pins when output current is limited | 1.233 | V | |||
V(SENSEx_stb) | Current-sense short-to-battery fault voltage | When short-to-battery or reverse current conditions are detected | 3.05 | 3.2 | 3.3 | V | |
V(SENSEx_tsd) | Current-sense thermal shutdown fault voltage | When thermal shutdown is detected | 2.7 | 2.85 | 3 | V | |
V(SENSEx_cl) | Current-sense current-limit fault voltage | When current-limit conditions are detected | 2.4 | 2.55 | 2.65 | V | |
I(SENSEx_H) | Current-sense fault condition current | When short-to-battery, reverse current, thermal shutdown, or current-limit conditions are detected | 3.3 | mA | |||
FAULT DETECTION | |||||||
V(stb_th) | Short-to-battery threshold | V(OUTx) – VI, checked during turnon sequence | –500 | –55 | 110 | mV | |
I(REV) | Reverse current detection level | Power FET on (SW or LDO mode) | –100 | –40 | –1 | mA | |
TSD | Thermal shutdown | Junction temperature | 175 | °C | |||
TSD(hys) | Thermal shutdown hysteresis | 15 | °C | ||||
INTERFACE CIRCUITRY | |||||||
VOL | ERR output low | I(SINK) = 5 mA | 0.4 | V | |||
Ilkg | ERR open-drain leakage current | ERR high impedance, 5-V external voltage is applied at ERR | 1 | µA | |||
R(OUTx-off) | OUT pulldown resistor(2) | ENx = GND | 50 | kΩ | |||
IR(lkg) | Reverse leakage current | –40 V < VI < 0 V, reverse current to IN | 0.6 | mA | |||
VCC | Internal voltage regulator | VI = 5.5 to 40 V, ICC = 0 mA | 4.25 | 4.5 | 4.75 | V | |
ICC(lim) | Internal voltage-regulator current-limit | 15 | 70 | mA |