over operating free-air temperature range (unless otherwise noted) (1)(2)
|
MIN |
MAX |
UNIT |
| Input voltage |
IN (t < 400 ms) |
|
48 |
V |
| IN |
|
35 |
| Reverse polarity voltage (3) |
–36 |
|
| ENx, DIAG_EN, SEL, SEH, and THER |
–0.3 |
7 |
| FAULT |
–0.3 |
7 |
| CS |
–2.7 |
7 |
| CL |
–0.3 |
7 |
| Input and output current |
ENx, DIAG_EN, SEL, SEH, and THER pins |
–10 |
|
mA |
| GND (t < 120 s) |
–100 |
250 |
| FAULT |
–30 |
10 |
| CS |
|
30 |
| CL |
|
6 |
| Input energy |
Inductive load switch-off energy dissipation, single pulse, single channel(4) |
|
40 |
mJ |
| Junction temperature |
TJ |
–55 |
150 |
°C |
| Storage temperature |
Tstg |
–65 |
150 |
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) All voltage values are with respect to GND.
(3) Reverse polarity condition:time t < 60 s, reverse current < IR2, VENx = 0 V, GND pin 1-kΩ resistor in parallel with diode.
(4) Test condition: VIN = 13.5 V, L = 8 mH, R = 0 Ω, TJ = 150°C. FR4 2s2p board, 2 × 70-μm Cu, 2 × 35-μm Cu. 600 mm2 thermal pad
copper area.