米6体育平台手机版

ZHCS996D June 2012 – February 2018 TPS81256

PRODUCTION DATA.

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

SIP|9

散热焊盘机械数据 (封装 | 引脚)

订购信息

7.5 Electrical Characteristics

Minimum and maximum values are at V_IN = 2.5V to 5.5V, V_OUT = 5.0V (or V_IN, whichever is higher), EN = 1.8V, T_A = –40°C to 85°C; Circuit of Parameter Measurement Information section (unless otherwise noted). Typical values are at V_IN = 3.6V, V_OUT = 5.0V, EN = 1.8V, T_A = 25°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_Q	Operating quiescent current into V_IN⁽¹⁾	I_OUT = 0mA, V_OUT = 5.0V, V_IN = 3.6V EN = V_IN Device not switching		30	50	µA
I_Q	Operating quiescent current into V_OUT⁽¹⁾			7	20	µA
I_SD	Shutdown current⁽¹⁾	EN = GND		0.85	5.0	μA
V_UVLO	Under-voltage lockout threshold	Falling		2.0	2.1	V
V_UVLO	Under-voltage lockout threshold	Hysteresis		0.1		V
ENABLE
V_IL	Low-level input voltage				0.4	V
V_IH	High-level input voltage		1.0			V
I_lkg	Input leakage current	Input connected to GND or V_IN			0.5	µA
OUTPUT
V_OUT	Regulated DC output voltage	2.5V ≤ V_IN ≤ 4.85V, I_OUT = 0mA PWM operation. Open Loop	4.92	5	5.08	V
		3.3V ≤ V_IN ≤ 4.85V, 0mA ≤ I_OUT ≤ 550mA PFM/PWM operation	4.85	5	5.2	V
		2.9V ≤ V_IN ≤ 4.85V, 0mA ≤ I_OUT ≤ 450mA PFM/PWM operation	4.85	5	5.2	V
ΔV_OUT	Power-save mode output ripple voltage	PFM operation, I_OUT = 1mA		35		mVpk
ΔV_OUT	PWM mode output ripple voltage	PWM operation, I_OUT = 200mA		8		mVpk
POWER SWITCH
r_DS(on)	Input-to-output On-resistance	V_I = 5.25 V. Device not switching		320		mΩ
I_lkg	Reverse leakage current into VOUT⁽¹⁾	EN = GND			5	µA
I_LIM	Average input current limit	EN = V_IN. V_IN = 3.3V		1180		mA
	Overtemperature protection			140		°C
	Overtemperature hysteresis			20		°C
OSCILLATOR
f_OSC	Oscillator frequency	V_IN = 3.6V, V_OUT = 5.0V, I_OUT = 500mA		4		MHz
TIMING
	Start-up time	I_OUT = 0mA Time from active EN to start switching		70		µs
	Start-up time	I_OUT = 0mA Time from active EN to V_OUT		400		µs

(1) Maximum values can vary over lifetime due to intrinsic capacitor ageing effects. For more details, refer to Thermal and Reliability Information section.