When R_SENSE is shorted to GND, V_FB is low and V_COMP is driven high and clamped. After the current reaches either the high-side overcurrent limit or low-side overcurrent limit, the device starts the auto-retry counter. After the t_{RETRY_ON} counter expires, the device shuts down and starts another counter, t_{RETRY_OFF}. During the shutdown period, both high-side and low-side NMOSs are switched off. The device repeats these actions until the failure condition is removed.