When the R_SENSE load is open, V_FB is higher than V_REF, and V_COMP is driven low and clamped. The high-side NMOS is forced to turn on with the minimum on-time each cycle, t_{MIN_ON}. If V_FB rises higher than V_{FB_OVP}, the device starts the auto-retry timer. After the counter t_{RETRY_ON} expires, the device shuts down and starts another counter t_{RETRY_OFF}. During the shutdown period, both high-side and low-side NMOSs are switched off. The device repeats these actions until the failure condition is removed. To prevent the FB pin from overvoltage damage during the t_{RETRY_ON} period, the FB pin implements a comparator with a 1-V threshold. If V_FB > 1 V, both high-side and low-side NMOSs are switched off immediately and the t_{RETRY_OFF} counter starts.