ZHCSMJ4 March 2021 TPS92391
PRODUCTION DATA
Figure 8-7 shows the critical part of circuitry: SEPIC components, the TPS92391 internal charge pump for gate-driver powering, and powering/grounding of TPS92391. Schematic example is shown below.
REFERENCE DESIGNATOR | DESCRIPTION | NOTE |
---|---|---|
RISENSE | 20 mΩ, 1 W | Input current sensing resistor |
RSD | 20 kΩ, 0.1 W | Power-line FET gate pullup resistor |
RSENSE | 50 mΩ, 1 W | Boost current sensing resistor |
RG | 15 Ω, 0.1 W | Gate resistor to control the rising/falling time of nMOSFET for EMC |
RUVLO1 | 76.8 kΩ, 0.1 W | These UVLO resistor settings set the VIN_UVLO rising voltage at 3.75 V, VIN_UVLO falling voltage at 3.35 V |
RUVLO2 | 20.5 kΩ, 0.1 W | |
RFB2 | 60 kΩ, 0.1 W | Bottom feedback divider resistor |
RFB1 | 330 kΩ, 0.1 W | Top feedback divider resistor |
RBST_FSET | 124 kΩ, 0.1 W | Boost frequency set resistor (2200 kHz) |
RISET | 38.7 kΩ, 0.1 W | Current set resistor (80 mA per channel) |
RPWM_FSET | 4.75 kΩ, 0.1 W | Output PWM frequency set resistor (305-Hz PWM frequency) |
RMODE | 3.92 kΩ, 0.1 W | Mode resistor (Phase-Shift PWM mode with 0x2B I2C address) |
RLED_SET | 4.75 kΩ, 0.1 W | LED_SET resistor (5 channels configuration) |
CPUMP | 10-µF, 10-V ceramic | Charge-pump output capacitor |
C2X | 2.2-µF, 10-V ceramic | Flying capacitor |
CVDD | 4.7-µF + 0.1-µF, 10-V ceramic | VDD bypass capacitor |
CIN | 1 × 33-µF, 50-V electrolytic + 1 × 10-µF, 50-V ceramic | Boost input capacitor |
COUT | 1 × 33-µF, 50-V electrolytic + 1 × 10-µF, 50-V ceramic | Boost output capacitor |
CS1 | 10-µF, 50-V ceramic | SEPIC coupling capacitor |
CS2 | 33-µF, 50-V electrolytic | SEPIC coupling capacitor |
RS | 2 Ω, 0.125 W | SEPIC resistor |
L1 | 4.7-µH saturation current 3 A | SEPIC inductor |
L2 | 4.7-µH saturation current 3 A | SEPIC inductor |
D1 | 50-V 10-A Schottky diode | SEPIC Schottky diode |
Q1 | 60-V, 25-A nMOSFET | SEPIC nMOSFET |
Q2 | 60-V, 30-A pMOSFET | Power-line FET |