ZHCSGY7B October 2017 – January 2018 TPS92830-Q1
PRODUCTION DATA.
- 1 特性
- 2 应用
- 3 说明
- 4 修订历史记录
- 5 说明 （续）
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Detailed Description
- 9 Application and Implementation
- 10Layout
- 11器件和文档支持
- 12机械、封装和可订购信息
7.5 Electrical Characteristics
VIN = 5 V to 40 V, VICTRL = 3 V, VDERATE = 0 V, TJ= –40°C to 150°C,(1) (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| BIAS | ||||||
| V(POR_rising) | Supply voltage POR, rising threshold | 4.5 | V | |||
| I(Quiescent) | Device standby current | PWMx = HIGH, FD = HIGH | 3.5 | mA | ||
| I(FAULT) | Device current in fault mode | PWMx = HIGH, FAULT = LOW | 0.5 | 0.75 | mA | |
| I(IREF) | Reference current | R(IREF) = 8 kΩ | 99 | µA | ||
| C(IREF) | IREF loading capacitance | R(IREF) = 8 kΩ | 0 | 4.3 | nF | |
| CHARGE PUMP | ||||||
| V(cp_drv) | Charge-pump operating voltage | 6.1 | 8.5 | 10 | V | |
| f(cp_sw) | Charge-pump switching frequency | 2.65 | MHz | |||
| C(cp_flying) | Charge-pump flying capacitor | 10 | nF | |||
| C(cp_storage) | Charge-pump storage capacitor | 150 | nF | |||
| HIGH-PRECISION LOGIC INPUTS (DIAGEN, PWMx, FD) | ||||||
| VIL(DIAGEN) | Input logic-low voltage, DIAGEN | 1.105 | 1.145 | 1.185 | V | |
| VIH(DIAGEN) | Input logic-high voltage, DIAGEN | 1.193 | 1.224 | 1.255 | V | |
| VIL(PWMx) | Input logic-low voltage, PWMx | 1.094 | 1.128 | 1.161 | V | |
| VIH(PWMx) | Input logic-high voltage, PWMx | 1.176 | 1.212 | 1.248 | V | |
| VIL(FD) | Input logic-low voltage, FD | 1.105 | 1.133 | 1.161 | V | |
| VIH(FD) | Input logic-high voltage, FD | 1.186 | 1.216 | 1.246 | V | |
| CONSTANT-CURRENT EXTERNAL N-CHANNEL MOSFET DRIVER | ||||||
| V(CS_REG_FULL) | Current-sense-resistor regulation voltage | V(ICTRL) = 3 V, V(DERATE) = 0 V | 295 | mV | ||
| ∆V(CS)(2)(3) | Current-sense-resistor regulation-voltage accuracy | V(ICTRL) = 3 V, V(DERATE) = 0 V, channel accuracy | –1.5% | 1.5% | ||
| V(ICTRL) = 3 V, V(DERATE) = 0 V, device accuracy | –2.5% | 2.5% | ||||
| I(DRV_source) | Gate-driver current-source capability at Gx | 190 | 230 | 270 | µA | |
| I(DRV_sink) | Gate-driver current-sink capability at Gx | 190 | 230 | 270 | µA | |
| V(GS_clamp_neg) | Gate-source negative clamp voltage | –0.9 | –0.7 | –0.5 | V | |
| V(GS_clamp_pos) | Gate-source positive clamp voltage | 9.8 | 10.4 | 11.3 | V | |
| I(ISNx_leakage) | Leakage current sink on ISNx pins | 1.3 | 2.3 | µA | ||
| INTERNAL PWM DIMMING | ||||||
| V(PWMCHG_th_rising) | Internal PWM generator, rising threshold | 1.45 | 1.48 | 1.51 | V | |
| V(PWMCHG_th_falling) | Internal PWM generator, falling threshold | 0.78 | 0.8 | 0.82 | V | |
| V(PWMCHG_th_hys) | Internal PWM generator hysteresis | 0.68 | V | |||
| I(PWMCHG) | PWM generator pullup current | V(PWMCHG) = 0 V, FD = LOW | 194 | 200 | 206 | µA |
| VOL(PWMOUT) | Open-drain PWMOUT pulldown voltage | V(PWMCHG) = 3 V, I(PWMOUT) pullup current = 4 mA | 0.4 | V | ||
| rDS(on)(PWMOUT) | Open-drain PWMOUT pulldown MOSFET rDS(on) | 40 | 55 | 90 | Ω | |
| ANALOG DIMMING | ||||||
| V(ICTRL_FULL) | Full-range ICTRL voltage | 1.65 | V | |||
| V(ICTRL_LIN_TOP) | Upper boundary for linear ICTRL dimming | 1.425 | V | |||
| V(ICTRL_LIN_BOT) | Lower boundary for linear ICTRL dimming | 75 | mV | |||
| ∆V(CS_ ICTRL_H) | Analog dimming accuracy | V(ICTRL) = 1.35 V, V(DERATE) = 0 V, accuracy: 1 – (V(CS_REG_x) / 0.27), x = 1, 2, 3 | –2.5% | 2% | ||
| ∆V(CS_ ICTRL_M) | Analog dimming accuracy | V(ICTRL) = 0.75 V, V(DERATE) = 0 V, accuracy: 1 – (V(CS_REG_x) / 0.15), x = 1, 2, 3 | –4% | 4% | ||
| ∆V(CS_ ICTRL_L) | Analog dimming accuracy | V(ICTRL) = 0.15 V, V(DERATE) = 0 V, accuracy: 1 –V(CS_REG_x) / 0.03, x = 1, 2, 3 | –18% | 18% | ||
| I(ICTRL_pullup) | ICTRL internal pullup current | 0.95 | 0.985 | 1.02 | mA | |
| CURRENT DERATING | ||||||
| V(DERATE_FULL) | Full-range DERATE voltage | 1.83 | V | |||
| V(DERATE_HALF) | Half-range DERATE voltage | 2.38 | V | |||
| K(DERATE) | Derate dimming ratio | V(DERATE) = 1.966 V | 81% | 87% | 95% | |
| V(DERATE) = 2.316 V | 51% | 58% | 65% | |||
| DIAGNOSTICS | ||||||
| V(OPEN_th_rising) | LED open rising threshold, device triggers open-circuit diagnostics V(SG_th_rising), and V(SG_th_falling) in the Electrical Characteristics table | V(ISNx) – V(SENSEx), x = 1, 2, 3 | 100 | 145 | 190 | mV |
| V(OPEN_th_falling) | LED open falling threshold, device releases from open-circuit diagnostics | V(ISNx) – V(SENSEx), x = 1, 2, 3 | 240 | 280 | 320 | mV |
| V(OPEN_th_hyst) | 135 | mV | ||||
| I(Retry_open) | LED-open retry current | 8 | 10 | 12 | mA | |
| V(SG_th_rising) | Channel output VSENSEx short-to-ground rising threshold, device triggers short-to-ground diagnostics | 0.885 | 0.92 | 0.95 | V | |
| V(SG_th_falling) | Channel output VSENSEx short-to-ground falling threshold, device releases from short-to-ground diagnostics | 1.17 | 1.215 | 1.26 | V | |
| V(SG_th_hyst) | Channel output VSENSEx short-to-ground hysteresis | 295 | mV | |||
| I(Retry_short) | Channel output VSENSEx short-to-ground retry current | 0.75 | 1 | 1.25 | mA | |
| FAULT | ||||||
| VIL(FAULT) | Logic-input low threshold | 0.7 | V | |||
| VIH(FAULT) | Logic-input high threshold | 2 | V | |||
| VOL(FAULT) | Logic-output low threshold | With 500-µA external pullup | 0.4 | V | ||
| VOH(FAULT) | Logic-output high threshold | With 1-µA external pulldown | 2.7 | 3.4 | V | |
| I(FAULT_pulldown) | FAULT internal pulldown current | 650 | 750 | 800 | µA | |
| I(FAULT_pullup) | FAULT internal pullup current | 6.5 | 7.6 | 9.5 | µA | |
| THERMAL PROTECTION | ||||||
| T(TSD) | Thermal shutdown threshold | 176 | ºC | |||
| T(TSD_HYS) | Thermal shutdown hysteresis | 15 | ºC | |||
(1) External N-channel MOSFET Ciss = 200 pF, Coss = 70 pF, at VDS = 25 Vdc, VGS = 0 Vdc, f = 1 MHz, Vth= 4 V, compensation capacitor Cgs = 4 nF
(2) 
(3) 