ZHCSPJ0C april 2022 – august 2023 TPSI3050
PRODUCTION DATA
- 1
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Power Ratings
- 6.6 Insulation Specifications
- 6.7 Safety-Related Certifications
- 6.8 Safety Limiting Values
- 6.9 Electrical Characteristics
- 6.10 Switching Characteristics
- 6.11 Insulation Characteristic Curves
- 6.12 Typical Characteristics
- 7 Parameter Measurement Information
- 8 Detailed Description
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Two-Wire or Three-Wire Mode Selection
- 9.2.2.2 Standard Enable, One-Shot Enable
- 9.2.2.3 CDIV1, CDIV2 Capacitance
- 9.2.2.4 RPXFR Selection
- 9.2.2.5 CVDDP Capacitance
- 9.2.2.6 Gate Driver Output Resistor
- 9.2.2.7 Start-up Time and Recovery Time
- 9.2.2.8 Supplying Auxiliary Current, IAUX From VDDM
- 9.2.2.9 VDDM Ripple Voltage
- 9.2.3 Application Curves
- 9.3 Power Supply Recommendations
- 9.4 Layout
- 10Device and Documentation Support
- 11Mechanical, Packaging, and Orderable Information
9.2 Typical Application
The circuits in Figure 9-1 and Figure 9-2 show a typical application for driving silicon based MOSFETs in three-wire mode and two-wire mode, respectively.
Figure 9-1 TPSI3050 Three-Wire Mode Driving MOSFETs
Figure 9-2 TPSI3050
Two-Wire Mode Driving MOSFETs