SLVSHS7 October   2024 TPSI31P1-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristic Curves
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Transmission of the Enable State
      2. 6.3.2 Power Transmission
      3. 6.3.3 Gate Driver
      4. 6.3.4 Chip Enable (CE)
      5. 6.3.5 Comparators
      6. 6.3.6 VDDP, VDDH, and VDDM Under-voltage Lockout (UVLO)
      7. 6.3.7 Keep-off Circuitry
      8. 6.3.8 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 CDIV1, CDIV2 Capacitance
      3. 7.2.3 Application Curves
      4. 7.2.4 Insulation Lifetime
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Tape and Reel Information

封装选项

机械数据 (封装 | 引脚)
  • DVX|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3 Power Supply Recommendations

To help ensure a reliable supply voltage, TI recommends that the CVDDP capacitance from VDDP to VSSP consists of a 0.1μF bypass capacitor for high frequency decoupling in parallel with a 1μF for low frequency decoupling. Low-ESR and low-ESL capacitors must be connected close to the device between the VDDP and VSSP pins.
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