In light load conditions, the device turns on the high-side MOSFET until the inductor current reaches a controlled minimum value of approximately 1 A. As the input voltage decreases, reducing the voltage headroom between V_IN and V_OUT, the amount of time required to reach this minimum current increases. During this time, additional energy flows from V_IN to V_OUT, resulting in increased output voltage ripple. To eliminate this behavior, the EN UVLO function must be used to maintain at least 1 V of headroom above V_OUT. Alternatively, additional output capacitance can be added to reduce the output voltage ripple in applications that operate at light loads with very low V_IN to V_OUT headroom.