米6体育平台手机版

ZHCSKB4B September 2019 – July 2024 TPSM82810 , TPSM82813

PRODMIX

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机械数据 (封装 | 引脚)

SIL|14
- MPQS045E

散热焊盘机械数据 (封装 | 引脚)

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6.6 Electrical Characteristics

Over operating junction temperature (T_J = -40 °C to +125 °C) and V_IN = 2.75 V to 6 V. Typical values at V_IN = 5 V and T_J= 25 °C. (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY
I_Q	Operating Quiescent Current	EN = high, I_OUT= 0 mA, Device not switching		15	21	µA
I_SD	Shutdown Current	EN = 0 V		0.11	18	µA
V_UVLO	Undervoltage Lockout Threshold	Rising Input Voltage	2.5	2.6	2.75	V
V_UVLO	Undervoltage Lockout Threshold	Falling Input Voltage	2.25	2.5	2.6	V
T_SD	Thermal Shutdown Temperature	Rising Junction Temperature		170		°C
T_SD	Thermal Shutdown Hysteresis			15		°C
CONTROL (EN, SS/TR, PG, MODE/SYNC)
V_IH	High Level Input Voltage for MODE/SYNC Pin		1.1			V
V_IL	Low Level Input Voltage for MODE/SYNC Pin				0.3	V
f_SYNC	Frequency Range on MODE/SYNC Pin for Synchronization		1.8		4	MHz
	Duty Cycle of Synchronization Signal at MODE/SYNC Pin		40%	50%	60%
V_IH	Input Threshold Voltage for EN pin	Rising EN	1.06	1.1	1.15	V
V_IL	Input Threshold Voltage for EN pin	Falling EN	0.96	1.0	1.05	V
I_LKG	Input Leakage Current for EN, MODE/SYNC Pins	EN, MODE/SYNC = V_IN or GND			150	nA
V_{TH_PG}	UVP Power Good Threshold	Rising (%V_FB)	92%	95%	98%
	UVP Power Good Threshold	Falling (%V_FB)	87%	90%	93%
	OVP Power Good Threshold	Rising (%V_FB)	107%	110%	113%
	OVP Power Good Threshold	Falling (%V_FB)	104%	107%	111%
	Power Good De-glitch Time	for a high level to low level transition on power good		40		µs
V_{OL_PG}	Power Good Output Low Voltage	I_PG= 2 mA		0.07	0.3	V
I_{LKG_PG}	Input Leakage Current for PG Pin	V_PG= 5 V			100	nA
I_SS/TR	SS/TR Pin Source Current		2.1	2.5	2.8	µA
	Tracking Gain	V_FB / V_SS/TR		1
	Tracking Offset	FB pin with V_SS/TR = 0 V		17		mV
POWER SWITCH
R_DS(ON)	High-Side MOSFET ON-Resistance	V_IN≥ 5 V		37	60	mΩ
R_DS(ON)	Low-Side MOSFET ON-Resistance	V_IN≥ 5 V		15	35	mΩ
R_DP	Dropout resistance	100% mode. Maximum value at V_IN = 3.3V, T_J = 85°C		50	90	mΩ
I_LIMH	High-Side MOSFET Current Limit ⁽¹⁾	TPSM82810; V_IN = 3 V to 6 V	4.8	5.6	6.55	A
I_LIMH	High-Side MOSFET Current Limit⁽¹⁾	TPSM82813; V_IN = 3V to 6 V	3.9	4.5	5.25	A
I_LIMNEG	Negative Current Limit ⁽¹⁾	MODE/SYNC = HIGH		-1.8		A
f_S	PWM Switching Frequency Range		1.8	2.25	4	MHz
f_S	PWM Switching Frequency	with COMP/FSET tied to VIN or GND	2.025	2.25	2.475	MHz
	PWM Switching Frequency Tolerance	using a resistor from COMP/FSET to GND	-19%		18%
t_on,min	Minimum on-time	V_IN= 3.3 V		50	75	ns
t_off,min	Minimum off-time	V_IN= 3.3 V		30		ns
OUTPUT
V_FB	Feedback Voltage Accuracy	V_IN ≥ V_OUT + 1 V; PWM mode	594	600	606	mV
		V_IN ≥ V_OUT + 1 V; PFM mode V_OUT ≥ 1.5 V; C_OUT,eff≥ 27μF	594	600	612	mV
		1 V ≤ V_OUT < 1.5 V; PFM mode C_OUT,eff≥ 47μF	594	600	615	mV
I_{LKG_FB}	Input Leakage Current (FB pin)	V_FB = 0.6 V		1	70	nA
V_FB	Feedback Voltage Accuracy with Voltage Tracking	V_IN ≥ V_OUT + 1 V; PWM mode V_SS/TR = 0.3 V	297	300	321	mV
R_dis	Output Discharge Resistance			30	50	Ω
t_delay	Start-up Delay Time	I_OUT = 0 mA, Time from EN=high to start switching; V_IN applied already	135	200	450	µs
t_ramp	Ramp time; SS/TR Pin Open	I_OUT = 0 mA, Time from first switching pulse until 95% of nominal output voltage	100	150	200	µs

(1) This is the static current limit. It can be temporarily higher in applications due to internal propagation delay (see Current Limit And Short Circuit Protection section).