ZHCSIO9A August   2018  – June 2021 TPSM831D31

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  References: DAC
    7. 6.7  Telemetry
    8. 6.8  Current Sense and Calibration
    9. 6.9  Logic Interface Pins: A_EN, A_PGOOD, B_EN, B_PGOOD,RESET
    10. 6.10 Protections: OVP and UVP
    11. 6.11 Typical Characteristics (VIN = 12 V)
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 DCAP+ Control
      2. 7.3.2 Setting the Load-Line (DROOP)
      3. 7.3.3 Start-Up Timing
      4. 7.3.4 Load Transitions
      5. 7.3.5 Switching Frequency
      6. 7.3.6 RESET Function
      7. 7.3.7 VID Table
    4. 7.4 Device Functional Modes
      1. 7.4.1 Continuous Conduction Mode
      2. 7.4.2 Operation With EN Signal Control
      3. 7.4.3 Operation With OPERATION Control
      4. 7.4.4 Operation With EN and OPERATION Control
    5. 7.5 Programming
      1. 7.5.1  PMBus Connections
      2. 7.5.2  PMBus Address Selection
      3. 7.5.3  Supported Commands
      4. 7.5.4  Commonly Used PMBus Commands
      5. 7.5.5  Voltage, Current, Power, and Temperature Readings
        1. 7.5.5.1 (88h) READ_VIN
        2. 7.5.5.2 (89h) READ_IIN
        3. 7.5.5.3 (8Bh) READ_VOUT
        4. 7.5.5.4 (8Ch) READ_IOUT
        5. 7.5.5.5 (8Dh) READ_TEMPERATURE_1
        6. 7.5.5.6 (96h) READ_POUT
        7. 7.5.5.7 (97h) READ_PIN
        8. 7.5.5.8 (D4h) MFR_SPECIFIC_04
      6. 7.5.6  Output Current Sense and Calibration
        1. 7.5.6.1 Reading Individual Phase Currents
          1. 7.5.6.1.1 Reading Total Current
          2. 7.5.6.1.2 51
      7. 7.5.7  Output Voltage Margin Testing
        1. 7.5.7.1 (01h) OPERATION
        2. 7.5.7.2 (26h) VOUT_MARGIN_LOW
        3. 7.5.7.3 (25h) VOUT_MARGIN_HIGH
      8. 7.5.8  Loop Compensation
        1. 7.5.8.1 (D7h) MFR_SPECIFIC_07
        2. 7.5.8.2 (28h) VOUT_DROOP
      9. 7.5.9  Converter Protection and Response
      10. 7.5.10 Output Overvoltage Protection and Response
        1. 7.5.10.1 (40h) VOUT_OV_FAULT_LIMIT
        2. 7.5.10.2 (41h) VOUT_OV_FAULT_RESPONSE
      11. 7.5.11 Maximum Allowed Output Voltage Setting
        1. 7.5.11.1 (24h) VOUT_MAX
      12. 7.5.12 Output Undervoltage Protection and Response
        1. 7.5.12.1 (44h) VOUT_UV_FAULT_LIMIT
        2. 7.5.12.2 (45h) VOUT_UV_FAULT_RESPONSE
      13. 7.5.13 Minimum Allowed Output Voltage Setting
        1. 7.5.13.1 (2Bh) VOUT_MIN
      14. 7.5.14 Output Overcurrent Protection and Response
        1. 7.5.14.1 (46h) IOUT_OC_FAULT_LIMIT
        2. 7.5.14.2 (4Ah) IOUT_OC_WARN_LIMIT
        3. 7.5.14.3 (47h) IOUT_OC_FAULT_RESPONSE
        4. 7.5.14.4 Per Phase Overcurrent Limit Thresholds
      15. 7.5.15 Input Under-Voltage Lockout (UVLO)
        1. 7.5.15.1 (35h) VIN_ON
      16. 7.5.16 Input Over-Voltage Protection and Response
        1. 7.5.16.1 (55h) VIN_OV_FAULT_LIMIT
        2. 7.5.16.2 (56h) VIN_OV_FAULT_RESPONSE
      17. 7.5.17 Input Undervoltage Protection and Response
        1. 7.5.17.1 (59h) VIN_UV_FAULT_LIMIT
        2. 7.5.17.2 (5Ah) VIN_UV_FAULT_RESPONSE
      18. 7.5.18 Input Overcurrent Protection and Response
        1. 7.5.18.1 (5Bh) IIN_OC_FAULT_LIMIT
        2. 7.5.18.2 (5Dh) IIN_OC_WARN_LIMIT
        3. 7.5.18.3 (5Ch) IIN_OC_FAULT_RESPONSE
      19. 7.5.19 Overtemperature Protection and Response
        1. 7.5.19.1 (4Fh) OT_FAULT_LIMIT
        2. 7.5.19.2 (51h) OT_WARN_LIMIT
        3. 7.5.19.3 (50h) OT_FAULT_RESPONSE
      20. 7.5.20 Dynamic Phase Shedding (DPS)
        1. 7.5.20.1 (DEh) MFR_SPECIFIC_14
        2. 7.5.20.2 (DFh) MFR_SPECIFIC_15
      21. 7.5.21 NVM Programming
      22. 7.5.22 NVM Security
        1. 7.5.22.1 (FAh) MFR_SPECIFIC_42
      23. 7.5.23 Black Box Recording
        1. 7.5.23.1 (D8h) MFR_SPECIFIC_08
      24. 7.5.24 Board Identification and Inventory Tracking
      25. 7.5.25 Status Reporting
        1. 7.5.25.1 (78h) STATUS_BYTE
        2. 7.5.25.2 (79h) STATUS_WORD
        3. 7.5.25.3 (7Ah) STATUS_VOUT
        4. 7.5.25.4 (7Bh) STATUS_IOUT
        5. 7.5.25.5 (7Ch) STATUS_INPUT
        6. 7.5.25.6 (7Dh) STATUS_TEMPERATURE
        7. 7.5.25.7 (7Eh) STATUS_CML
        8. 7.5.25.8 (80h) STATUS_MFR_SPECIFIC
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitors
        2. 8.2.2.2 Output Capacitors
        3. 8.2.2.3 Switching Frequency
        4. 8.2.2.4 Set PMBus Address
        5. 8.2.2.5 PMBus GUI Default Values
      3. 8.2.3 Application Performance Plots
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
  • MOA|28
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.4 Thermal Information

THERMAL METRIC(4) TPSM831D31 UNIT
MOA (QFN)
28 PINS
RθJA Junction-to-ambient thermal resistance (1) Natural Convection 5.5 °C/W
200 LFM 3.4 °C/W
400 LFM 2.8 °C/W
ψJT Junction-to-top characterization parameter (2) 0.3 °C/W
ψJB Junction-to-board characterization parameter (3) 1.6 °C/W
TSD Thermal shutdown temperature (default setting) 135 °C
(1) The junction-to-ambient thermal resistance applies to devices soldered directly to a 100 mm x 150 mm, 8-layer PCB with 2 oz. copper.
(2) The junction-to-top board characterization parameter, ψJT, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (section 6 and 7). TJ = ψJT × Pdis + TT; where Pdis is the power dissipated in the device and TT is the temperature of the top of the inductor.
(3) The junction-to-board characterization parameter, ψJB, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB × Pdis + TB; where Pdis is the power dissipated in the device and TB is the temperature of the board 1 mm from the device.
(4) For more information about thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report .
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