ZHCSTQ8 January   2024 TPSM843320E

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics (Module)
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  VIN Pins and VIN UVLO
      2. 6.3.2  Enable and Adjustable UVLO
      3. 6.3.3  Adjusting the Output Voltage
      4. 6.3.4  Switching Frequency Selection
      5. 6.3.5  Switching Frequency Synchronization to an External Clock
        1. 6.3.5.1 Internal PWM Oscillator Frequency
        2. 6.3.5.2 Loss of Synchronization
        3. 6.3.5.3 Interfacing the SYNC/FSEL Pin
      6. 6.3.6  Ramp Amplitude Selection
      7. 6.3.7  Soft Start and Prebiased Output Start-Up
      8. 6.3.8  Mode Pin
      9. 6.3.9  Power Good (PGOOD)
      10. 6.3.10 Current Protection
        1. 6.3.10.1 Positive Inductor Current Protection
        2. 6.3.10.2 Negative Inductor Current Protection
      11. 6.3.11 Output Overvoltage and Undervoltage Protection
      12. 6.3.12 Overtemperature Protection
      13. 6.3.13 Output Voltage Discharge
    4. 6.4 Device Functional Modes
      1. 6.4.1 Forced Continuous-Conduction Mode
      2. 6.4.2 Discontinuous Conduction Mode During Soft Start
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 1.0V Output, 1MHz Application
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1  Switching Frequency
          2. 7.2.1.2.2  Output Inductor Selection
          3. 7.2.1.2.3  Output Capacitor
          4. 7.2.1.2.4  Input Capacitor
          5. 7.2.1.2.5  Adjustable Undervoltage Lockout
          6. 7.2.1.2.6  Output Voltage Resistors Selection
          7. 7.2.1.2.7  Bootstrap Capacitor Selection
          8. 7.2.1.2.8  BP5 Capacitor Selection
          9. 7.2.1.2.9  PGOOD Pullup Resistor
          10. 7.2.1.2.10 Current Limit Selection
          11. 7.2.1.2.11 Soft-Start Time Selection
          12. 7.2.1.2.12 Ramp Selection and Control Loop Stability
          13. 7.2.1.2.13 MODE Pin
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
        1. 7.4.2.1 Thermal Performance
  9. 8 Device and Documentation Support
    1. 8.1 接收文档更新通知
    2. 8.2 支持资源
    3. 8.3 Trademarks
    4. 8.4 静电放电警告
    5. 8.5 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.5 Electrical Characteristics (Module)

TJ = –55°C to +125°C, VVIN = 4V - 18V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE
IQ(VIN) VIN operating non-switching supply current VEN = 1.3V, VFB = 550mV, VVIN = 12V, 1MHz 1200 1600 µA
ISD(VIN) VIN shutdown supply current VEN = 0V, VVIN = 12V 15 25 µA
VIN UVLO rising threshold VIN rising 3.9 4 4.1 V
VIN UVLO hysteresis 150 mV
ENABLE AND UVLO
VEN(rise) EN voltage rising threshold EN rising, enable switching 1.2 1.25 V
VEN(fall) EN voltage falling threshold EN falling, disable switching 1.05 1.1 V
VEN(hyst) EN voltage hysteresis 100 mV
EN pin sourcing current VEN = 1.1V 0.4 1.5 µA
EN pin sourcing current VEN = 1.3V 11.6 µA
INTERNAL LDO BP5
VBP5 Internal LDO BP5 output voltage VVIN = 12V 4.5 V
BP5 dropout voltage VVIN – VBP5, VVIN = 3.8V 350 mV
BP5 short-circuit current limit VVIN = 12V 75 mA
REFERENCE VOLTAGE
VFB Feedback Voltage  TJ = –55°C to 125°C 495 500 505 mV
IFB(LKG) Input leakage current into FB pin VFB = 500mV, non-switching, VVIN = 12V, VEN = 0V 1 nA
SWITCHING FREQUENCY AND OSCILLATOR
fSW Switching frequency RFSEL = 24.3kΩ 450 500 550 kHz
fSW Switching frequency RFSEL = 17.4kΩ 675 750 825 kHz
fSW Switching frequency RFSEL = 11.8kΩ 900 1000 1100 kHz
fSW Switching frequency RFSEL = 8.06kΩ 1350 1500 1650 kHz
fSW Switching frequency RFSEL = 4.99kΩ 1980 2200 2420 kHz
SYNCHRONIZATION
VIH(sync) High-level input voltage 1.8 V
VIL(sync) Low-level input voltage 0.8 V
SOFT-START
tSS1 Soft-start time RMODE = 1.78kΩ 0.5 ms
tSS2 Soft-start time RMODE = 2.21kΩ 1 ms
tSS3 Soft-start time RMODE = 2.74kΩ 2 ms
tSS4 Soft-start time RMODE = 3.32kΩ 4 ms
POWER STAGE
RDS(on)HS High-side MOSFET on-resistance TJ = 25°C, VVIN = 12V, VBOOT-SW = 4.5V 25 mΩ
RDS(on)LS Low-side MOSFET on-resistance TJ = 25°C, VBP5 = 4.5V 13.9 mΩ
VVIN(TH_f) VIN throttle falling threshold TJ = 25°C. Recover high-side gate drive upon VIN falling 15.2 15.5 15.8 V
VBOOT-SW(UV_r) BOOT-SW UVLO rising threshold VBOOT-SW rising 3.2 V
VBOOT-SW(UV_f) BOOT-SW UVLO falling threshold VBOOT-SW falling 2.8 V
TON(min) Minimum ON pulse width IOUT > ½ IL_PK-PK 30 37 ns
TOFF(min) Minimum OFF pulse width (1) 115 140 ns
CURRENT SENSE AND OVERCURRENT PROTECTION
IOC_HS_pk1 High-side peak current limit(3A)  RMODE = 1.78kΩ 4.6 4.9 5.1 A
IOC_HS_pk2 High-side peak current limit(3A) RMODE = 22.1kΩ 2.9 3.3 3.5 A
IOC_LS_src1 Low-side sourcing current limit(3A)  RMODE = 1.78kΩ 3.8 4.2 4.5 A
IOC_LS_src2 Low-side sourcing current limit(3A) RMODE = 22.1kΩ 2.7 3.0 3.3 A
IOC_LS_snk Low-side sinking current limit Current into SW pin 1.9 A
OUTPUT OVERVOLTAGE AND UNDERVOLTAGE PROTECTIONS
VOVP Overvoltage-protection (OVP) threshold voltage VFB rising 120 % VREF
VUVP Undervoltage-protection (UVP) threshold voltage VFB falling 80 % VREF
POWER GOOD
PGOOD threshold VFB rising (Fault) 113 116 119 % VREF
PGOOD threshold VFB falling (Good) 105 108 111 % VREF
PGOOD threshold VFB rising (Good) 89 92 95 % VREF
PGOOD threshold VFB falling (Fault) 81 84 87 % VREF
IPGOOD(LKG) Leakage current into PGOOD pin when open drain output is high VPGOOD = 4.7V 5 µA
VPG(low) PGOOD low-level output voltage IPGOOD = 2mA, VIN = 12V 0.5 V
Min VIN for valid PGOOD output 0.9 1 V
HICCUP
Hiccup time before re-start 7*tSS ms
OUTPUT DISCHARGE
RDischg Output discharge resistance VVIN = 12V, VSW = 0.5V, power conversion disabled. 100 Ω
THERMAL SHUTDOWN
TSDN Thermal shutdown threshold (1) Temperature rising 165 175 °C
THYST Thermal shutdown hysteresis (1) 12 °C
(1) Specified by design. Not production tested.
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