ZHCSRQ4 august   2023 TPSM8S6C24

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. 说明(续)
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Average Current-Mode Control
        1. 8.3.1.1 On-Time Modulator
        2. 8.3.1.2 Current Error Integrator
        3. 8.3.1.3 Voltage Error Integrator
      2. 8.3.2  Linear Regulators
      3. 8.3.3  AVIN and PVIN Pins
      4. 8.3.4  Input Undervoltage Lockout (UVLO)
        1. 8.3.4.1 Fixed AVIN UVLO
        2. 8.3.4.2 Fixed VDD5 UVLO
        3. 8.3.4.3 Programmable PVIN UVLO
        4. 8.3.4.4 EN/UVLO Pin
      5. 8.3.5  Start-Up and Shutdown
      6. 8.3.6  Differential Sense Amplifier and Feedback Divider
      7. 8.3.7  Set Output Voltage and Adaptive Voltage Scaling (AVS)
        1. 8.3.7.1 Reset Output Voltage
        2. 8.3.7.2 Soft Start
      8. 8.3.8  Prebiased Output Start-Up
      9. 8.3.9  Soft Stop and (65h) TOFF_FALL Command
      10. 8.3.10 Power Good (PGOOD)
      11. 8.3.11 Set Switching Frequency
      12. 8.3.12 Frequency Synchronization
      13. 8.3.13 Loop Follower Detection
      14. 8.3.14 Current Sensing and Sharing
      15. 8.3.15 Telemetry
      16. 8.3.16 Overcurrent Protection
      17. 8.3.17 Overvoltage, Undervoltage Protection
      18. 8.3.18 Overtemperature Management
      19. 8.3.19 Fault Management
      20. 8.3.20 Back-Channel Communication
      21. 8.3.21 Switching Node (SW)
      22. 8.3.22 PMBus General Description
      23. 8.3.23 PMBus Address
      24. 8.3.24 PMBus Connections
    4. 8.4 Device Functional Modes
      1. 8.4.1 Programming Mode
      2. 8.4.2 Standalone, Loop Controller, Loop Follower Mode Pin Connections
      3. 8.4.3 Continuous Conduction Mode
      4. 8.4.4 Operation With CNTL Signal (EN/UVLO)
      5. 8.4.5 Operation with (01h) OPERATION Control
      6. 8.4.6 Operation with CNTL and (01h) OPERATION Control
    5. 8.5 Programming
      1. 8.5.1 Supported PMBus Commands
      2. 8.5.2 Pin Strapping
        1. 8.5.2.1 Programming MSEL1
        2. 8.5.2.2 Programming MSEL2
        3. 8.5.2.3 Programming VSEL
        4. 8.5.2.4 Programming ADRSEL
        5. 8.5.2.5 Programming MSEL2 for a Loop Follower Device (GOSNS Tied to BP1V5)
        6. 8.5.2.6 Pin-Strapping Resistor Configuration
    6. 8.6 Register Maps
      1. 8.6.1  Conventions for Documenting Block Commands
      2. 8.6.2  (01h) OPERATION
      3. 8.6.3  (02h) ON_OFF_CONFIG
      4. 8.6.4  (03h) CLEAR_FAULTS
      5. 8.6.5  (04h) PHASE
      6. 8.6.6  (10h) WRITE_PROTECT
      7. 8.6.7  (15h) STORE_USER_ALL
      8. 8.6.8  (16h) RESTORE_USER_ALL
      9. 8.6.9  (19h) CAPABILITY
      10. 8.6.10 (1Bh) SMBALERT_MASK
      11. 8.6.11 (1Bh) SMBALERT_MASK_VOUT
      12. 8.6.12 (1Bh) SMBALERT_MASK_IOUT
      13. 8.6.13 (1Bh) SMBALERT_MASK_INPUT
      14. 8.6.14 (1Bh) SMBALERT_MASK_TEMPERATURE
      15. 8.6.15 (1Bh) SMBALERT_MASK_CML
      16. 8.6.16 (1Bh) SMBALERT_MASK_OTHER
      17. 8.6.17 (1Bh) SMBALERT_MASK_MFR
      18. 8.6.18 (20h) VOUT_MODE
      19. 8.6.19 (21h) VOUT_COMMAND
      20. 8.6.20 (22h) VOUT_TRIM
      21. 8.6.21 (24h) VOUT_MAX
      22. 8.6.22 (25h) VOUT_MARGIN_HIGH
      23. 8.6.23 (26h) VOUT_MARGIN_LOW
      24. 8.6.24 (27h) VOUT_TRANSITION_RATE
      25. 8.6.25 (29h) VOUT_SCALE_LOOP
      26. 8.6.26 (2Bh) VOUT_MIN
      27. 8.6.27 (33h) FREQUENCY_SWITCH
      28. 8.6.28 (35h) VIN_ON
      29. 8.6.29 (36h) VIN_OFF
      30. 8.6.30 (37h) INTERLEAVE
      31. 8.6.31 (38h) IOUT_CAL_GAIN
      32. 8.6.32 (39h) IOUT_CAL_OFFSET
      33. 8.6.33 (40h) VOUT_OV_FAULT_LIMIT
      34. 8.6.34 (41h) VOUT_OV_FAULT_RESPONSE
      35. 8.6.35 (42h) VOUT_OV_WARN_LIMIT
      36. 8.6.36 (43h) VOUT_UV_WARN_LIMIT
      37. 8.6.37 (44h) VOUT_UV_FAULT_LIMIT
      38. 8.6.38 (45h) VOUT_UV_FAULT_RESPONSE
      39. 8.6.39 (46h) IOUT_OC_FAULT_LIMIT
      40. 8.6.40 (47h) IOUT_OC_FAULT_RESPONSE
      41. 8.6.41 (4Ah) IOUT_OC_WARN_LIMIT
      42. 8.6.42 (4Fh) OT_FAULT_LIMIT
      43. 8.6.43 (50h) OT_FAULT_RESPONSE
      44. 8.6.44 (51h) OT_WARN_LIMIT
      45. 8.6.45 (55h) VIN_OV_FAULT_LIMIT
      46. 8.6.46 (56h) VIN_OV_FAULT_RESPONSE
      47. 8.6.47 (58h) VIN_UV_WARN_LIMIT
      48. 8.6.48 (60h) TON_DELAY
      49. 8.6.49 (61h) TON_RISE
      50. 8.6.50 (62h) TON_MAX_FAULT_LIMIT
      51. 8.6.51 (63h) TON_MAX_FAULT_RESPONSE
      52. 8.6.52 (64h) TOFF_DELAY
      53. 8.6.53 (65h) TOFF_FALL
      54. 8.6.54 (78h) STATUS_BYTE
      55. 8.6.55 (79h) STATUS_WORD
      56. 8.6.56 (7Ah) STATUS_VOUT
      57. 8.6.57 (7Bh) STATUS_IOUT
      58. 8.6.58 (7Ch) STATUS_INPUT
      59. 8.6.59 (7Dh) STATUS_TEMPERATURE
      60. 8.6.60 (7Eh) STATUS_CML
      61. 8.6.61 (7Fh) STATUS_OTHER
      62. 8.6.62 (80h) STATUS_MFR_SPECIFIC
      63. 8.6.63 (88h) READ_VIN
      64. 8.6.64 (8Bh) READ_VOUT
      65. 8.6.65 (8Ch) READ_IOUT
      66. 8.6.66 (8Dh) READ_TEMPERATURE_1
      67. 8.6.67 (98h) PMBUS_REVISION
      68. 8.6.68 (99h) MFR_ID
      69. 8.6.69 (9Ah) MFR_MODEL
      70. 8.6.70 (9Bh) MFR_REVISION
      71. 8.6.71 (9Eh) MFR_SERIAL
      72. 8.6.72 (ADh) IC_DEVICE_ID
      73. 8.6.73 (AEh) IC_DEVICE_REV
      74. 8.6.74 (B1h) USER_DATA_01 (COMPENSATION_CONFIG)
      75. 8.6.75 (B5h) USER_DATA_05 (POWER_STAGE_CONFIG)
      76. 8.6.76 (D0h) MFR_SPECIFIC_00 (TELEMETRY_CONFIG)
      77. 8.6.77 (DAh) MFR_SPECIFIC_10 (READ_ALL)
      78. 8.6.78 (DBh) MFR_SPECIFIC_11 (STATUS_ALL)
      79. 8.6.79 (DCh) MFR_SPECIFIC_12 (STATUS_PHASE)
      80. 8.6.80 (E3h) MFR_SPECIFIC_19 (PGOOD_CONFIG)
      81. 8.6.81 (E4h) MFR_SPECIFIC_20 (SYNC_CONFIG)
      82. 8.6.82 (ECh) MFR_SPECIFIC_28 (STACK_CONFIG)
      83. 8.6.83 (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS)
      84. 8.6.84 (EEh) MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE)
      85. 8.6.85 (EFh) MFR_SPECIFIC_31 (DEVICE_ADDRESS)
      86. 8.6.86 (F0h) MFR_SPECIFIC_32 (NVM_CHECKSUM)
      87. 8.6.87 (F1h) MFR_SPECIFIC_33 (SIMULATE_FAULT)
      88. 8.6.88 (FAh) MFR_SPECIFIC_42 (PASSKEY)
      89. 8.6.89 (FBh) MFR_SPECIFIC_43 (EXT_WRITE_PROTECT)
      90. 8.6.90 (FCh) MFR_SPECIFIC_44 (FUSION_ID0)
      91. 8.6.91 (FDh) MFR_SPECIFIC_45 (FUSION_ID1)
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Custom Design With WEBENCH® Tools
        2. 9.2.2.2  Switching Frequency
        3. 9.2.2.3  Output Voltage Setting (VSEL Pin)
        4. 9.2.2.4  Compensation Selection (MSEL1 Pin)
        5. 9.2.2.5  Output Capacitor Selection
          1. 9.2.2.5.1 Output Voltage Ripple
        6. 9.2.2.6  Input Capacitor Selection
        7. 9.2.2.7  Soft Start, Overcurrent Protection, and Stacking Configuration (MSEL2 Pin)
        8. 9.2.2.8  Enable and UVLO
        9. 9.2.2.9  ADRSEL
        10. 9.2.2.10 BCX_CLK and BCX_DAT
      3. 9.2.3 Application Curves
      4. 9.2.4 Two-Phase Application
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Two-Phase Detailed Design Procedure
          1. 9.2.4.2.1  Switching Frequency
          2. 9.2.4.2.2  Output Voltage Setting (VSEL Pin)
          3. 9.2.4.2.3  Compensation Selection (MSEL1 Pin)
          4. 9.2.4.2.4  Output Capacitor Selection
          5. 9.2.4.2.5  Input Capacitor Selection
          6. 9.2.4.2.6  GOSNS/Loop Follower Pin of Loop Follower Devices
          7. 9.2.4.2.7  Soft Start, Overcurrent Protection, and Stacking Configuration (MSEL2 Pin)
          8. 9.2.4.2.8  Enable, UVLO
          9. 9.2.4.2.9  VSHARE Pin
            1. 9.2.4.2.9.1 ADRSEL Pin
          10. 9.2.4.2.10 SYNC Pin
          11. 9.2.4.2.11 VOSNS Pin of Loop Follower Devices
          12. 9.2.4.2.12 Unused Pins of Loop Follower Devices
        3. 9.2.4.3 Two-Phase Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
        1. 9.4.2.1 Thermal Performance on the TI EVM
        2. 9.4.2.2 EMI
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 10.1.2 Development Support
        1. 10.1.2.1 Texas Instruments Fusion Digital Power Designer
        2. 10.1.2.2 Custom Design With WEBENCH® Tools
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

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Input Capacitor Selection

The power-stage input-decoupling capacitance (effective capacitance at the PVIN and PGND pins) must be sufficient to supply the high switching currents demanded when the high-side MOSFET switches on, while providing minimal input-voltage ripple as a result. This effective capacitance includes any DC-bias effects. The voltage rating of the input capacitor must be greater than the maximum input voltage with derating. The capacitor must also have a ripple-current rating greater than the maximum input-current ripple to the device during full load. Use Equation 19 to estimate the input RMS current.

Equation 19. I I N ( R M S ) = I O U T ( M A X ) N × V O U T V I N ( M i n ) × ( V I N M i n - V O U T ) V I N ( M i n ) = 35   A 1 × 1.2   V 5   V × ( 5   V - 1.2   V ) 5   V = 14.95   A

The minimum input capacitance and ESR values for a given input voltage-ripple specification, VIN(ripple), are shown in Equation 20 and Equation 21. The input ripple is composed of a capacitive portion (VRIPPLE(cap)) and a resistive portion (VRIPPLE(esr)).

Equation 20. C I N ( M i n ) = I O U T ( M A X ) N × V O U T V R I P P L E ( c a p ) × V I N ( M a x ) × f S W = 35   A 1 × 1.2   V 0.1   V × 16   V × 650   k H z = 40.4   μ F
Equation 21. E S R C I N ( M a x ) = V R I P P L E ( E S R ) I O U T ( M a x ) N + 1 2 I R I P P L E = 0.2   V 35   A 1 + 1 2 × 7.7   A = 5.15   m Ω

The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the capacitor. The capacitance variations because of temperature can be minimized by selecting a dielectric material that is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power-regulator capacitors because these components have a high capacitance-to-volume ratio and are fairly stable over temperature. The input capacitor must also be selected with consideration of the DC bias. For this example design, a ceramic capacitor with at least a 25-V voltage rating is required to support the maximum input voltage. For this design, allow 0.1-V input ripple for VRIPPLE(cap) and 0.2-V input ripple for VRIPPLE(esr). Using Equation 20 and Equation 21, the minimum input capacitance for this design is 40.4 µF, and the maximum ESR is 5.15 mΩ. For this design example, four 22-μF, 25-V ceramic capacitors, two 6800-pF, 25-V ceramic capacitors, and one additional 100-μF, 25-V low-ESR electrolytic capacitors in parallel were selected for the power stage with sufficient margin. For all designs a minimum input capacitance of 10 µF is required and a maximum input ripple of 500 mV is recommended.

To minimize the high frequency ringing, the high frequency 6800-pF PVIN bypass capacitors must be placed close to power stage.